199539 ⎘
Digital stores characterised by the use of storage elements not covered by groups , , or using resistive RAM [RRAM] elements RRAM elements whose operation depends upon chemical change
Sub-classes:SEMICONDUCTOR DEVICE
#2Memory device and operation method thereof for performing multiply-accumulate operation
#3Nonvolatile semiconductor memory device
#4Techniques for a multi-step current profile for a phase change memory
#5Bayesian network in memory
#6Techniques for a multi-step current profile for a phase change memory
#7Two-terminal reversibly switchable memory device
#8Electrochemical device of variable electrical conductance
#9Resistive switching memory device based on multi-inputs
#10Paired intercalation cells for drift migration
#11Two-terminal reversibly switchable memory device
#12Optoelectronic memristor devices including one or more solid electrolytes with electrically controllable optical properties
#13Electrically actuated switch
#14Memory cells, memory systems, and memory programming methods
#15Resistance and gate control in decoder circuits for read and write optimization
#16Supercapacitor with electrolyte
#17HIGH SPEED THIN FILM TWO TERMINAL RESISTIVE MEMORY
#18High speed thin film two terminal resistive memory
#19High speed thin film two terminal resistive memory
#20Two-terminal reversibly switchable memory device
#21Resistive memory cell programmed by metal alloy formation and method of operating thereof
#22Barrier modulated cell structures with intrinsic vertical bit line architecture
#23TCAM device and operating method thereof
#24Method for producing a memory cell having a porous dielectric and use of the memory cell
#25Semiconductor storage device
#26Single-readout high-density memristor crossbar
#27Controlling structural phase transitions and properties of two-dimensional materials by integrating with multiferroic layers
#28Memory cells, memory systems, and memory programming methods
#29Two-terminal reversibly switchable memory device
#30Voltage-controlled resistive devices
#31Electrically actuated switch
#32VOLTAGE-CONTROLLED RESISTIVE DEVICES
#33Device switching using layered device structure
#34Methods for fabricating programmable devices and related structures
#35Low read current architecture for memory
#36Non-volatile resistance-switching thin film devices
#37Method of operating memory array having divided apart bit lines and partially divided bit line selector switches
#38Electronic device including a semiconductor memory unit that includes cell mats of a plurality of planes vertically stacked
#39Writable device based on alternating current
#40Programmable-resistance non-volatile memory
#41Two-terminal reversibly switchable memory device
#42Storage device and storage unit with ion source layer and resistance change layer
#43Electronic device including a semiconductor memory unit that includes cell mats of a plurality of planes vertically stacked
#44Nonvolatile storage device and method of controlling the same
#45Permutational memory cells
#46Resistive devices and methods of operation thereof
#47Resistive random access memory device and manufacturing method thereof
#48Two-terminal reversibly switchable memory device
#49Device switching using layered device structure
#50Low read current architecture for memory
#51Oxide memory resistor including semiconductor nanoparticles
#52Permutational memory cells
#53Electrically actuated switch
#54Voltage generation circuit, and write driver and semiconductor memory apparatus including the same
#55Semiconductor memory device
#56Liquid composite compositions using non-volatile liquids and nanoparticles and uses thereof
#57Reliable set operation for phase-change memory cell
#58Semiconductor apparatus
#59Liquid composite compositions using non-volatile liquids and nanoparticles and uses thereof
#60Resistive devices and methods of operation thereof
#61Memory apparatus with gated phase-change memory cells
#62Memory apparatus with gated phase-change memory cells
#63Programming of gated phase-change memory cells
#64Sensing circuits and phase change memory devices including the same
#65Permutational memory cells
#66Solid memory
#67Memory cell having dielectric memory element
#68Reliable set operation for phase-change memory cell
#69Phase-change memory cell
#70Decoding architecture and method for phase change non-volatile memory devices
#71Method of changing reflectance or resistance of a region in an optoelectronic memory device
#72Set pulse for phase change memory programming
#73Reference cell circuit and variable resistance nonvolatile memory device including the same
#74Set pulse for phase change memory programming
#75OPTOELECTRONIC MEMORY DEVICES
#76Nonvolatile semiconductor memory device including a via-hole with a narrowing cross-section and method of manufacturing the same
#77ORGANIC REDOX ACTIVE COMPOUNDS WITH REVERSIBLE STORAGE OF CHARGES AND SUBSTRATES AND MOLECULAR MEMORY DEVICES COMPRISING THEM
#78Combined memories in integrated circuits
#79Modeling technique for resistive random access memory (RRAM) cells
#80Memory cell that includes a carbon-based memory element and methods of forming the same
#81Two Terminal Re Writeable Non Volatile Ion Transport Memory Device
#82Low read current architecture for memory
#83Device switching using layered device structure
#84Variable-resistance memory device with charge sharing that discharges pre-charge voltage of a selected bit line to share charge with unselected bit lines
#85Variable-resistance memory device and its driving method
#86LOW-POWER NANOSCALE SWITCHING DEVICE WITH AN AMORPHOUS SWITCHING MATERIAL
#87Optimized solid electrolyte for programmable metallization cell devices and structures
#88Memory element and drive method for the same, and memory device
#89Combined memories in integrated circuits
#90Memory device
#91Nonvolatile memory device having a transistor connected in parallel with a resistance switching device
#92Resistive memory device and method of fabricating the same
#93Non-volatile resistance-switching thin film devices
#94Switching element and manufacturing method thereof
#95Resistance change memory
#96Memristor with nanostructure electrodes
#97Memristor Having a Nanostructure Forming An Active Region
#98Memory device and a semiconductor device
#99Nanoscale switching device
#100NON-VOLATILE MEMORY CELL CONTAINING NANODOTS AND METHOD OF MAKING THEREOF
#101Data read/write device
#102Nonvolatile semiconductor memory device
#103Testing a nonvolatile circuit element having multiple intermediate states
#104Resistive memory device and manufacturing method thereof and operating method thereof
#105Information recording and reproducing device
#106Method for adjusting a resistive change element using a reference
#107Method for resetting a resistive change memory element
#108Memory device with improved data retention
#109Memristor with a non-planar substrate
#110Semiconductor memory device and write method of the same
#111Nonvolatile semiconductor memory device generating different write pulses to vary resistances
#112Optoelectronic memory devices
#113Variable-resistance memory device and its operation method
#114Biomolecule-based electronic device
#115Resistance change memory device and operation method of the same
#116Circuitry and method
#117Memory device with inhibit control sections
#118Non-volatile memory device
#119Data read/write device
#120SOLID MEMORY
#121Semiconductor memory device with three dimensional solid electrolyte structure, and manufacturing method thereof
#122Variable resistance memory device
#123Memory cell having dielectric memory element
#124Reliable set operation for phase-change memory cell
#125Charge retention structures and techniques for implementing charge controlled resistors in memory cells and arrays of memory
#126Switching element and method for manufacturing switching element
#127METHOD FOR CONTROLLED FORMATION OF THE RESISTIVE SWITCHING MATERIAL IN A RESISTIVE SWITCHING DEVICE AND DEVICE OBTAINED THEREOF
#128Multi-terminal reversibly switchable memory device
#129Two-Terminal Reversibly Switchable Memory Device
#130Optimized solid electrolyte for programmable metallization cell devices and structures
#131Memory cell that includes a carbon-based memory element and methods of forming the same
#132Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element, and methods of forming the same
#133Nonvolatile data storage, semicoductor memory device including nonvolatile data storage and method of forming the same
#134Switchable memory diode—a new memory device
#135Nanostructured device
#136ORGANIC MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
#137Nonvolatile semiconductor memory device including via-holes continuously formed through plural cell array layers
#138NONVOLATILE SEMICONDUCTOR STORAGE APPARATUS AND METHOD OF MANUFACTURING THE SAME
#139Method and apparatus for an integrated circuit with programmable memory cells, data system
#140Variable-resistance element
#141Resistance change memory device
#142Molecular electronic device having a patterned electrode and method of fabricating the same
#143SWITCHING DEVICE
#144Multi-step selective etching for cross-point memory
#145Semiconductor memory device and read method thereof
#146Dendrimer having metallocene core, organic memory device using the same and manufacturing method thereof
#147Optimized solid electrolyte for programmable metallization cell devices and structures
#148MOLECULAR BATTERY MEMORY DEVICE AND DATA PROCESSING SYSTEM USING THE SAME
#149Processing systems and methods for molecular memory
#150Simultaneous read circuit for multiple memory cells
#151Liquid composite compositions using non-volatile liquids and nanoparticles and uses thereof
#152Card-like memory unit with separate read/write unit
#153Data storage device
#154Polyoxometallates in memory devices
#155Semiconductor memory device and write method of the same
#156Circuitry and method
#157Electrochemical device and methods for producing the same
#158Combined memories in integrated circuits
#159Memory devices based on electric field programmable films
#160Electrically actuated switch
#161Multi-terminal electrically actuated switch
#162Crossbar control circuit
#163Memory cell comprising a molecular transistor, device comprising a plurality of such cells and method for using same
#164Optimized solid electrolyte for programmable metallization cell devices and structures
#165Switching device and methods for controlling electron tunneling therein
#166Manufacture of programmable crossbar signal processor
#167Solar cell, photoelectric conversion device and clean unit
#168Resistive organic memory device and fabrication method thereof
#169Switching element
#170Molecular memory devices including solid-state dielectric layers and related methods
#171Three-terminal electrical bistable devices
#172Data read/write device
#173Stepwise growth of oligomeric redox-active molecules on a surface without the use of protecting groups
#174Control layer for a nanoscale electronic switching device
#175Switchable memory diode—a new memory device
#176Optoelectronic memory devices
#177Memory device and a semiconductor device
#178Storage device and semiconductor device
#179Method of programming a memory device
#180Resistive memory device with improved data retention and reduced power
#181Design and operation of a resistance switching memory cell with diode
#182Memory device with improved data retention
#183Variable breakdown characteristic diode
#184High density memory device
#185Semiconductor memory device with three dimensional solid electrolyte structure, and manufacturing method thereof
#186Electrochemical device including a channel of an organic material, a gate electrode, and an electrolyte therebetween
#187Memory device including barrier layer for improved switching speed and data retention
#188Memory using mixed valence conductive oxides
#189Silicon molecular hybrid storage cell
#190Memory device including dendrimer
#191Semiconductor memory with volatile and non-volatile memory cells
#192Organo-resistive memory unit
#193Molecular memory devices and methods
#194Molehole embedded 3-D crossbar architecture used in electrochemical molecular memory device
#195Semiconductor memory
#196Electrochemical lithography memory system and method
#197Resistively switching nonvolatile memory cell based on alkali metal ion drift
#198Systems and methods for adjusting programming thresholds of polymer memory cells
#199Polymer memory device with variable period of retention time
#200Switchable memory diode-a new memory device
#201Composition of matter which results in electronic switching through intra- or inter- molecular charge transfer, or charge transfer between molecules and electrodes induced by an electrical field
#202Processing systems and methods for molecular memory
#203Molecular memory
#204Simultaneous read circuit for multiple memory cells
#205Point contact array, not circuit, and electronic circuit using the same
#206Polymer dielectrics for memory element array interconnect
#207Memory cell having an electric field programmable storage element, and method of operating same
#208Memory devices based on electric field programmable films
#209In situ patterning of electrolyte for molecular information storage devices
#210Charge transfer complexes including an electron donor and an electron acceptor as basis of resistive memories
#211Two-component, rectifying-junction memory element
#212Bottom electrode chemically-bonded Langmuir-Blodgett films via photolabile groups
#213Memory device having variable resistive memory element
#214Molecular memory arrays and devices
#215Molecular switching device
#216Storage device
#217Hybrid molecular memory devices and methods of use thereof
#218Molecular memory device
#219Molecular memory cell
#220Circuit element having a first layer composed of an electrically insulating substrate material, a method for producing a circuit element, bispyridinium compounds and their use in circuit elements
#221Method and system for molecular charge storage field effect transistor
#222Memory devices based on electric field programmable films
#223High density molecular memory device
#224Storage device
#225Circuit element having a first layer of an electrically insulating substrate material and method for manufacturing a circuit element
#226Point contact array, not circuit, and electronic circuit comprising the same
#227Ionic floating-gate memory device
#228Enhanced erasing of two-terminal memory
#229Memristor-based emulator for use in digital modulation
#230Systems and methods for increasing the read sensitivity of a resistive random access memory (RRAM)
#231Safeguarding data through an SMT process
#232Programmable impedance elements and devices that include such elements