199601 ⎘
Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using magnetic elements
Ultra-compact CAM array based on single MTJ and operating method thereof
#2Dual compare ternary content addressable memory
#3Memory device
#4Content addressable memory with spin-orbit torque devices
#5Network router device with hardware-implemented lookups including two-terminal non-volatile memory
#6Electronic comparison systems
#7Nonvolatile RAM comprising a write circuit and a read circuit operating in parallel
#8Method for writing to a MRAM device configured for self-referenced read operation with improved reproducibly
#9Electronic comparison systems
#10MTJ-based content addressable memory with measured resistance across matchlines
#11Magnetic random access memory cell with a dual junction for ternary content addressable memory applications
#12Content addressable memory cell and content addressable memory
#13Electronic comparison systems
#14Magnetic random access memory cell with a dual junction for ternary content addressable memory applications
#15Semiconductor device and method of writing/reading entry address into/from semiconductor device
#16Associative memory oscillator array
#17Read-disturbance-free nonvolatile content addressable memory (CAM)
#18Content addressable memory system
#19High speed magnetic random access memory-based ternary CAM
#20Magnetic random access memory cell with a dual junction for ternary content addressable memory applications
#21Content addressable memory
#22Apparatus, system, and method for matching patterns with an ultra fast check engine
#23Semiconductor signal processing device
#24CONTENT ADDRESSABLE MEMORY ARRAY WRITING
#25Ultimate magnetic random access memory-based ternary cam
#26Coding techniques for improving the sense margin in content addressable memories
#27Magnetic random access memory
#28Ternary Content Addressable Magnetoresistive random access memory cell
#29Non-volatile resistive sense memory on-chip cache
#30High density content addressable memory using phase change devices
#31System and method for providing content-addressable magnetoresistive random access memory cells
#32Semiconductor signal processing device
#33System and method for providing content-addressable magnetoresistive random access memory cells
#34Method and arrangement for associative memory device based on ferrofluid
#35Magnetic memory element and magnetic memory apparatus
#36System and method for providing content-addressable magnetoresistive random access memory cells
#37Non-volatile memory device conducting comparison operation
#38Non-volatile memory device conducting comparison operation
#39Nonvolatile semiconductor memory device having improved redundancy relieving rate
#40Content addressable memory cell including resistive memory elements
#41Binary and ternary non-volatile CAM
#42Nonvolatile semiconductor memory device having improved redundancy relieving rate
#43MRAM including unit cell formed of one transistor and two magnetic tunnel junctions (MTJs) and method for fabricating the same
#44Non-volatile memory device conducting comparison operation
#45Error handling for match action unit memory of a forwarding element
#46Error handling for match action unit memory of a forwarding element
#47Memory system with a content addressable superconducting memory
#48Magnetic tunnel junction ternary content addressable memory
#49Non-volatile ternary content-addressable memory with bi-directional voltage divider control and multi-step search
#50Content addressable memory (“CAM”)