199616 ⎘
Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
Programming and erasing method for charge-trapping memory devices
#902Low power NROM memory devices
#903Method and apparatus for operating a string of charge trapping memory cells
#904One transistor SOI non-volatile random access memory cell
#905Method of erasing data from SONOS memory device
#906Operating array cells with matched reference cells
#907Enhanced multi-bit non-volatile memory device with resonant tunnel barrier
#908Location-specific NAND (LS NAND) memory technology and cells
#909Pulse width converged method to control voltage threshold (Vt) distribution of a memory cell
#910Flash memories and methods of fabricating the same
#911MANUFACTURING METHOD OF A NON-VOLATILE MEMORY
#912SINGLE-POLY NON-VOLATILE MEMORY DEVICE AND ITS OPERATION METHOD
#913Operation method of non-volatile memory
#914Method for operating single-poly non-volatile memory device
#915SINGLE-POLY NON-VOLATILE MEMORY DEVICE AND ITS OPERATION METHOD
#916SINGLE-POLY NON-VOLATILE MEMORY DEVICE
#917NON-VOLATILE MEMORY
#918SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#919Methods of erasing and designing electrically erasable charge trap nonvolatile memory cells having erase threshold voltage that is higher than an initial threshold voltage
#920Memory cell, pixel structure and fabrication process of memory cell
#921CMIS semiconductor nonvolatile storage circuit
#922Nonvolatile semiconductor storage device
#923Flash memory structure and method for fabricating the same
#924Method for programming and erasing an NROM cell
#925Method of forming bottom oxide for nitride flash memory
#926Non-volatile programmable memory cell for programmable logic array
#927Charge trap memory device comprising composite of nanoparticles and method of fabricating the charge trap memory device
#928Method for programming and erasing an NROM cell
#929Hole annealing methods of non-volatile memory cells
#930Scalable flash/NV structures and devices with extended endurance
#931Twin MONOS array for high speed application
#932Dense arrays and charge storage devices
#933Method for controlling nonvolatile memory device
#934Nonvolatile memory circuit based on change in MIS transistor characteristics
#935NON-VOLATILE MEMORY CELL AND OPERATING METHOD THEREOF
#936Semiconductor device and control method therefor
#937Methods of programming silicon oxide nitride oxide semiconductor (SONOS) memory devices
#938Flash memory cell and methods for programming and erasing
#939Low power electrically alterable nonvolatile memory cells and arrays
#940Memory utilizing oxide nanolaminates
#941Low power NROM memory devices
#942Method of refreshing charge-trapping non-volatile memory using band-to-band tunneling hot hole (BTBTHH) injection
#943Sensing scheme for a non-volatile semiconductor memory cell
#944Vertical NROM NAND flash memory array
#945Band-engineered multi-gated non-volatile memory device with enhanced attributes
#946One-transistor composite-gate memory
#947Nonvolatile semiconductor storage device and its manufacturing method
#948Erase and read schemes for charge trapping non-volatile memories
#949Semiconductor device and method of fabricating the same
#950Write once read only memory employing charge trapping in insulators
#951Method for improving SOG process
#952Semiconductor device with reconfigurable logic
#953Method of fabricating nonvolatile semiconductor memory devices with uniform sidewall gate length
#954Semiconductor device and a method of manufacturing the same
#955Structure and method of fabricating high-density trench-based non-volatile random access SONOS memory cells for SOC applications
#956In-service reconfigurable DRAM and flash memory device
#957Semiconductor device and method of controlling said semiconductor device
#958Method for erasing an NROM cell
#959Semiconductor device and method of controlling said semiconductor device
#960Semiconductor element and semiconductor memory device using the same
#961In-service reconfigurable DRAM and flash memory device
#962Twin insulator charge storage device operation and its fabrication method
#963Twin insulator charge storage device operation and its fabrication method
#964Non-volatile memory device having improved band-to-band tunneling induced hot electron injection efficiency and manufacturing method thereof
#965Twin insulator charge storage device operation and its fabrication method
#966Nonvolatile memory cell arrangement
#967Charge trap memory with avalanche generation inducing layer
#968Scalable Flash/NV structures and devices with extended endurance
#969Multi-state NROM device
#970Byte-operational nonvolatile semiconductor memory device
#971Multi-state NROM device
#972Method for programming a charge-trapping nonvolatile memory cell by raised-Vs channel initialed secondary electron injection (CHISEL)
#973Method of forming and operating an assisted charge memory device
#974Method and apparatus for operating a non-volatile memory device
#975Method and apparatus for operating a non-volatile memory array
#976Non volatile semiconductor memory device
#977Non-volatile memory cell having a silicon-oxide-nitride-oxide-silicon gate structure and fabrication method of such cell
#978Method and apparatus for operating a non-volatile memory array
#979Charge trap insulator memory device
#980Charge trap insulator memory device
#981Memory device
#982Method for programming and erasing an NROM cell
#983NROM memory cell, memory array, related devices and methods
#984NROM memory cell, memory array, related devices and methods
#985Ballistic injection NROM flash memory
#986Non-volatile memory device using mobile ionic charge and method of manufacturing the same
#987Non-volatile semiconductor memory device with alternative metal gate material
#988Data processing device
#989Non-volatile semiconductor memory
#990Memory device
#991Non-volatile device manufactured using ion-implantation and method of manufacture the same
#992Nonvolatile memory circuit
#993Charge-trapping memory device and methods for operating and manufacturing the cell
#994System and method of controlling a three-dimensional memory
#995Semiconductor storage device, its manufacturing method and operating method, and portable electronic apparatus
#996Semiconductor device
#997Non-volatile memory device with conductive sidewall spacer and method for fabricating the same
#998Programming and erasing method for charge-trapping memory devices
#999Charge-trapping memory cell
#1000Nonvolatile memory
#1001Byte-operational nonvolatile semiconductor memory device
#1002Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device
#1003Semiconductor device and an integrated circuit card
#1004Nonvolatile semiconductor memory device
#1005Method and apparatus for operating nonvolatile memory cells in a series arrangement
#1006Semiconductor device and a method of manufacturing the same
#1007One-transistor composite-gate memory
#1008NON-VOLATILE MEMORY CELL, FABRICATION METHOD AND OPERATING METHOD THEREOF
#1009Semiconductor device and manufacturing method for semiconductor device to reduce the lithography masks
#1010Non-volatile memory device and method for programming/erasing the same
#1011Operating array cells with matched reference cells
#1012Carburized silicon gate insulators for integrated circuits
#1013In-service reconfigurable DRAM and flash memory device
#1014Nonvolatile semiconductor storage device
#1015Method for manufacturing semiconductor device
#1016Semiconductor integrated circuit device and a method of manufacturing the same
#1017Charge trapping non-volatile memory and method for gate-by-gate erase for same
#1018Charge trapping non-volatile memory with two trapping locations per gate, and method for operating same
#1019Memory array including multiple-gate charge trapping non-volatile cells
#1020Charge trapping non-volatile memory and method for operating same
#1021Programmable fuse and antifuse and method therefor
#1022Scalable Flash/NV structures and devices with extended endurance
#1023Non-volatile semiconductor memory device and writing method thereof
#1024Vertical memory cell and manufacturing method thereof
#1025Nonvolatile memory and method of driving the same
#1026Operation scheme for programming charge trapping non-volatile memory
#1027Vertical split gate memory cell and manufacturing method thereof
#1028Nonvolatile semiconductor memory device and manufacturing method thereof
#1029Ballistic injection NROM flash memory
#1030Method for programming single-bit storage SONOS type memory
#1031Method of making a one transistor SOI non-volatile random access memory cell
#1032Memory device including a dielectric multilayer structure and method of fabricating the same
#1033Operation scheme for spectrum shift in charge trapping non-volatile memory
#1034Method and system for self-convergent erase in charge trapping memory cells
#1035Operation scheme with high work function gate and charge balancing for charge trapping non-volatile memory
#1036Operation scheme with charge balancing for charge trapping non-volatile memory
#1037Electrically erasable charge trap nonvolatile memory cells having erase threshold voltage that is higher than an initial threshold voltage
#1038CMIS semiconductor nonvolatile storage circuit
#1039Nonvolatile semiconductor memory device
#1040Non-volatile memory array
#1041Nonvolatile semiconductor memory apparatus and method of producing the same
#1042Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device
#1043High-density NROM-FINFET
#1044Nonvolatile semiconductor memory apparatus and method of producing the same
#1045Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
#1046NON-VOLATILE MEMORY CELL
#1047Method for erasing an NROM cell
#1048Method for erasing an NROM cell
#1049Nonvolatile semiconductor memory apparatus and method of producing the same
#1050Trap read only non-volatile memory (TROM)
#1051Cell structure of nonvolatile memory device
#1052Twin insulator charge storage device operation and its fabrication method
#1053Non-volatile memory element with oxide stack and non-volatile SRAM using the same
#1054Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
#1055Nonvolatile semiconductor memory apparatus and method of producing the same
#1056Twin insulator charge storage device operation and its fabrication method
#1057Non-volatile memory cell
#1058SONOS device and fabricating method thereof
#1059Method for programming and erasing an NROM cell
#1060Non-volatile memory device and drive method thereof
#1061Non-volatile static random access memory
#1062Semiconductor device
#1063Vertical NROM NAND flash memory array
#1064Non-volatile semiconductor memory array structure and operations
#1065Multi-state NROM device
#1066Methods of erasing a non-volatile memory device having discrete charge trap sites
#1067NAND memory array incorporating multiple write pulse programming of individual memory cells and method for operation of same
#1068Method for operating a memory cell array
#1069Charge-trapping memory device including high permittivity strips
#1070Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device
#1071Non-volatile memory cell
#1072Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device
#1073Method for programming and erasing non-volatile memory with nitride tunneling layer
#1074Semiconductor device with localized charge storage dielectric and method of making same
#1075Non-volatile memory device including semiconductor charge-trapping material particles
#1076Nonvolatile semiconductor memory and method for controlling the same
#1077Flash memory cell having multi-program channels
#1078Reading array cell with matched reference cell
#1079Non-volatile semiconductor memory device and method of actuating the same
#1080Flash memories and methods of fabricating the same
#1081Split-gate non-volatile memory
#1082Method for erasing an NROM cell
#1083Method for programming and erasing an NROM cell
#1084Write once read only memory employing charge trapping in insulators
#1085One transistor SOI non-volatile random access memory cell
#1086One transistor SOI non-volatile random access memory cell
#1087Semiconductor element and semiconductor memory device using the same
#1088Nonvolatile memory and method of driving the same
#1089Semiconductor memory
#1090Nonvolatile semiconductor memory device
#1091Memory with read circuit for current-to-voltage slope characteristic-based sensing and method
#10923D memory semiconductor devices and structures
#1093Negative voltage wordline methods and systems
#1094Multi-state programming in memory device with loop-dependent bit line voltage during verify
#1095Reducing word line capacitance in 3D memory
#1096High-voltage shifter with reduced transistor degradation
#1097Circuit arrangement and technique for setting matrix values in three-terminal memory cells
#1098Support pillar structures for leakage reduction in a three-dimensional memory device
#1099Support pillar structures for leakage reduction in a three-dimensional memory device and methods of making the same
#1100Robust and error free physical unclonable function using twin-cell charge trap transistor memory
#1101Memory device and method for operating the same
#1102Three-dimensional vertical NOR flash thin-film transistor strings
#1103Memory cells programmed via multi-mechanism charge transports
#1104Memory cell structure and operation method thereof
#1105Suppression of program disturb with bit line and select gate voltage regulation
#1106Decoding method, memory storage device and memory control circuit unit
#1107Memory structure, method of operating the same, and method of manufacturing the same
#1108Memory cells and integrated structures
#1109Semiconductor device
#1110Method for operating a memory device
#1111Distributed current source/sink using inactive memory elements
#1112Field sub-bitline nor flash array
#1113One time programmable read-only memory (ROM) in SOI CMOS
#1114Mitigating hot electron program disturb
#1115Three-dimensional memory device with charge carrier injection wells for vertical channels and method of making and using thereof
#1116Weak erase prior to read
#1117Endurance of silicon-oxide-nitride-oxide-silicon (SONOS) memory cells
#1118Non-volatile memory with customized control of injection type of disturb during read operations
#1119Vertical thin film transistors with surround gates
#1120Stacked vertical memory array architectures, systems and methods
#1121Semiconductor device structure
#1122Operating method of memory device
#1123Three dimensional memory device
#1124Device and method for improved threshold voltage distribution for non-volatile memory
#1125Nonvolatile memory system, storage device and method for operating nonvolatile memory device
#1126High-K (HK)/metal gate (MG) (HK/MG) multi-time programmable (MTP) switching devices, and related systems and methods
#1127Method of reducing hot electron injection type of read disturb in dummy memory cells
#1128Source line formation in 3D vertical channel and memory
#1129Floating gate memory device with interpoly charge trapping structure
#1130Word line repair for 3D vertical channel memory
#1131Programming memory with reduced short-term charge loss
#1132Systems, methods, and apparatus for memory cells with common source lines
#1133Structure variation detection for a memory having a three-dimensional memory configuration
#1134Mitigation of data retention drift by progrmming neighboring memory cells
#1135Flash memory devices and systems