199638 ⎘
Erasable programmable read-only memories electrically programmable; Auxiliary circuits, e.g. for writing into memory Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
Sub-classes:VOLTAGE WINDOW ADJUSTMENT
#2MEMORY, MEMORY SYSTEM, ELECTRONIC DEVICE, AND OPERATING METHOD
#3INTERNAL VOLTAGE GENERATING DEVICE AND GENERATING METHOD THEREFOR
#4DETERMINING SOFT DATA
#5ADAPTIVE INTEGRITY SCAN IN A MEMORY SUB-SYSTEM
#6MEMORY DEVICES, MEMORY SYSTEMS, AND OPERATION METHODS THEREOF
#7ADAPTIVE INTEGRITY SCAN RATES IN A MEMORY SUB-SYSTEM BASED ON BLOCK HEALTH METRICS
#8ERROR HANDLING
#9Techniques for Managing Program Disturb in Non-Volatile Memory
#10CURRENT MONITORING IN A MEMORY DEVICE TO IMPROVE SHORT DETECTION
#11OPERATING A CHALCOGENIDE MEMORY WITH VERTICAL WORD AND VERTICAL WORD SWITCHING ELEMENTS
#12NANOPORE ARRAYS
#13MANAGING ERROR COMPENSATION USING CHARGE COUPLING AND LATERAL MIGRATION SENSITIVITY
#14BIT LINE TIMING BASED CELL TRACKING QUICK PASS WRITE FOR PROGRAMMING NON-VOLATILE MEMORY APPARATUSES
#15SELECTIVELY ERASING ONE OF MULTIPLE ERASE BLOCKS COUPLED TO A SAME STRING USING GATE INDUCED DRAIN LEAKAGE
#16BEST READ REFERENCE VOLTAGE SEARCH OF 3D NAND MEMORY
#17MEMORY SYSTEM HAVING SEMICONDUCTOR MEMORY DEVICE THAT PERFORMS VERIFY OPERATIONS USING VARIOUS VERIFY VOLTAGES
#18MEMORY, MEMORY SYSTEM, ELECTRONIC DEVICE, AND OPERATING METHOD
#19SEMICONDUCTOR MEMORY DEVICE
#20UNBALANCED PROGRAMMED DATA STATES IN MEMORY
#21MEMORY DEVICE AND METHOD OF OPERATING THE SAME
#22USING NON-SEGREGATED CELLS AS DRAIN-SIDE SELECT GATES FOR SUB-BLOCKS IN A MEMORY DEVICE
#23MEMORY DEVICE AND AN OPERATION METHOD THEREOF
#24METHOD OF CONTROLLING A SEMICONDUCTOR MEMORY INCLUDING MEMORY CELLS AND A WORD LINE
#25BIT-ERASABLE EMBEDDED SELECT IN TRENCH MEMORY (ESTM)
#26NONVOLATILE MEMORY DEVICE, STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE, AND OPERATING METHOD OF STORAGE DEVICE
#27MULTI-STATE PROGRAMMING OF MEMORY CELLS
#28MEMORY ASSEMBLY WITH BODY BIASING AND RELATED METHODS
#29MEMORY SYSTEM
#30SLOW CHARGE LOSS MONITOR FOR POWER UP PERFORMANCE BOOSTING
#31MEMORY DEVICE PERFORMING PROGRAM OPERATION
#32NOR Memory Cell with Floating Gate
#33MEMORY DEVICE, OPERATING METHOD OF MEMORY DEVICE, AND MEMORY SYSTEM
#34CONTROLLING ERASE-TO-PROGRAM DELAY FOR IMPROVING DATA RETENTION
#35Best read reference voltage search of 3D NAND memory
#36Memory device performing sensing operation and method of operating the same
#37NON-VOLATILE MEMORY WITH ADAPTIVE DUMMY WORD LINE BIAS
#38PARTIAL BLOCK READ VOLTAGE OFFSET
#39ADAPTIVE INTEGRITY SCAN RATES IN A MEMORY SUB-SYSTEM BASED ON BLOCK HEALTH METRICS
#40ADAPTIVE INTEGRITY SCAN IN A MEMORY SUB-SYSTEM
#41Non-volatile memory device for mitigating cycling trapped effect and control method thereof
#42Techniques for threshold voltage scans
#43Determining soft data
#44Operating method of a nonvolatile memory device for programming multi-page data
#45METHOD FOR FINDING COMMON OPTIMAL READ VOLTAGE OF MULTI-DIES, STORAGE SYSTEM
#46Memory system having semiconductor memory device that performs verify operations using various verify voltages
#47ERROR HANDLING
#48Managing error compensation using charge coupling and lateral migration sensitivity
#49VOLTAGE WINDOW ADJUSTMENT
#50Unbalanced programmed data states in memory
#51SEMICONDUCTOR DEVICE
#52Semiconductor memory device
#53Memory system and processing method of memory system
#54Memory system including semiconductor memory and controller capable of determining necessary shifted boundary read voltages in a short period of time
#55Operating a chalcogenide memory with vertical word and vertical word switching elements
#56Memory device and operating method for performing pre-program operation on over-erasure cells
#57CONTENT ADDRESSABLE MEMORY DEVICE AND METHOD FOR DATA SEARCHING AND COMPARING THEREOF
#58Writing method of flash memory and memory storage device
#59Non-volatile semiconductor storage device
#60Read-time overhead and power optimizations with command queues in memory device
#61Receiver with pipeline structure for receiving multi-level signal and memory device including the same
#62Using non-segregated cells as drain-side select gates for sub-blocks in a memory device
#63First-pass continuous read level calibration
#64Semi-circle drain side select gate maintenance by selective semi-circle dummy word line program
#65Operating method of a nonvolatile memory device for programming multipage data
#66Memory system performing read operation with read voltage
#67Preread and read threshold voltage optimization
#68Voltage bin calibration based on a temporary voltage shift offset
#69Multi-tier threshold voltage offset bin calibration
#70Read-time overhead and power optimizations with command queues in memory device
#71Mitigating a voltage condition of a memory cell in a memory sub-system
#72Bit-erasable embedded Select in Trench Memory (eSTM)
#73Memory system having semiconductor memory device that performs verify operations using various verify voltages
#74MULTI-BIT MEMORY SYSTEM WITH ADAPTIVE READ VOLTAGE CONTROLLER
#75Neural network circuits having non-volatile synapse arrays
#76DIGITAL OUTPUT MECHANISMS FOR ANALOG NEURAL MEMORY IN A DEEP LEARNING ARTIFICIAL NEURAL NETWORK
#77Read sample offset bit determination in a memory sub-system
#78Method of controlling a semiconductor memory including memory cells and a word line
#79Limiting regulator overshoot during power up
#80Threshold switch structure and memory cell arrangement
#81Nonvolatile memory device, storage device including nonvolatile memory device, and operating method of storage device
#82Multi-tier threshold voltage offset bin calibration
#83Determining soft data
#84Operating method of a nonvolatile memory device for programming multi-page data
#85Semiconductor memory device
#86Memory device and method of operating the memory device
#87Three-dimensional memory devices with drain select gate cut and methods for forming and operating the same
#88Nonvolatile memory device including sensing time control circuit and operating method thereof
#89Two multi-level memory cells sensed to determine multiple data values
#90Power-on-reset for memory
#91Apparatus for determining an expected data age of memory cells
#92Multi-state programming of memory cells
#93High-voltage shifter with degradation compensation
#94Power-on-reset for memory
#95Memory system having semiconductor memory device that performs verify operations using various verify voltages
#96Memory cell with isolated well region and associated non-volatile memory
#97Erasable programmable non-volatile memory
#98Preread and read threshold voltage optimization
#99Semiconductor memory device including memory cells at opposing sides of semiconductor
#100Semiconductor storage device and memory system
#101Method of concurrent multi-state programming of non-volatile memory with bit line voltage step up
#102Storage device and operating method thereof
#103Memory system performing read operation with read voltage
#104Mitigating a voltage condition of a memory cell in a memory sub-system
#105Multi-bit memory system with adaptive read voltage controller
#106Semiconductor memory device and method for adjusting threthold voltage thereof
#107Threshold estimation in NAND flash devices
#108Memory controller determining optimal read voltage and operating method thereof
#109Memory system
#110Device battery and unmanned aerial vehicle
#111Memory device and operating method thereof
#112Method of determining read reference voltage for blocks based on number of erroneous bits
#113Read sample offset bit determination using most probably decoder logic in a memory sub-system
#114Semiconductor storage device
#115Nanopore arrays
#116Semiconductor storage device and memory system
#117Fail bit number counting circuit and non-volatile semiconductor storage device
#118Semiconductor storage device
#119Storage device and method of operating the same
#120Semiconductor memory device that performs successive tracking reads during an operation to read one page
#121Multi-state programming in memory device with loop-dependent bit line voltage during verify
#122Method of controlling a semiconductor memory
#123Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell
#124First-pass continuous read level calibration
#125High-voltage shifter with degradation compensation
#126Apparatus for determining an expected data age of memory cells
#127Threshold estimation in NAND flash devices
#128Memory systems comprising non-volatile memory devices
#129Storage cell using charge-trapping devices
#130Random code generator with non-volatile memory
#131Generating a random value based on a noise characteristic of a memory cell
#132Memory system having semiconductor memory device that performs verify operations using various verify voltages
#133Determining soft data
#134Semiconductor memory device
#135Apparatus and methods for determining read voltages for a read operation
#136Memory circuit and data bit status detector thereof
#137Memory device and operating method thereof
#138Methods for determining an expected data age of memory cells
#139Memory controller and method of operating the same
#140Memory controller and method of operating the same
#141Memory controller and method of operating the same
#142Memory system configured to estimate a read voltage using a histogram
#143Memory system
#144Memory system and method of controlling memory system for calculating voltage value for reading data
#145First-pass continuous read level calibration
#146NAND flash memory controller and storage apparatus applying the same
#147Programming of memory cells in three-dimensional memory devices
#148Storage device and operating method thereof
#149Semiconductor storage device
#150Flash memory system and method of generating quantized signal thereof
#151Storage device and operating method thereof
#152Memory management method and storage controller
#153Non-volatile memory device and interface configuration method
#154Semiconductor storage device and memory system
#155One check fail byte (CFBYTE) scheme
#156Techniques for reducing read voltage threshold calibration in non-volatile memory
#157Memory system performing read of nonvolatile semiconductor memory device
#158Non-volatile storage system with adjustable select gates as a function of temperature
#159Boundary word line voltage shift
#160Memory controller and method of operating the same
#161Memory system, memory system control method, and program
#162Memory system
#163Multi-bit memory system with adaptive read voltage controller
#164Memory device and method of operating the same
#165Memory system and operating method thereof
#166Memory system having semiconductor memory device that performs verify operations using various verify voltages
#167Semiconductor storage device
#168Method of reading data about memory device, method of controlling memory controller, and storage device including memory device and memory controller
#169System and method for adjusting read levels in a storage device based on bias functions
#170Internal copy to handle NAND program fail
#171Memory device and operation method thereof
#172Non-volatile memory and method for power efficient read or verify using lockout control
#173Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell
#174Methods of scrubbing errors and semiconductor modules using the same
#175Neural network circuits having non-volatile synapse arrays
#176Neural network circuits having non-volatile synapse arrays
#177Split gate non-volatile memory (NVM) with improved programming efficiency
#178Semiconductor memory device and memory system that performs a normal read operation or a special read operation including a tracking read followed by a shift read
#179System and method for storing multibit data in non-volatile memory
#180Refresh in non-volatile memory
#181State dependent sense circuits and pre-charge operations for storage devices
#182One check fail byte (CFBYTE) scheme
#183Nonvolatile memory device and operating method of the same
#184Non-volatile semiconductor memory in which data writing to cell groups is controlled using plural program pulses
#185Three dimensional nonvolatile memory device and programming method utilizing multiple wordline inhibit voltages to reduce hot carrier injection
#186Semiconductor memory device
#187Temperature management in open-channel memory devices
#188Memory devices having selectively electrically connected data lines
#189Electrostatic discharge circuit
#190Semiconductor integrated circuit device and a method of manufacturing the same
#191Sensing circuit with voltage clamp for non-volatile memory
#192Methods of programming and sensing in a memory device
#193Method for improving a program speed and an erase speed of a memory
#194Random code generator with antifuse differential cell and associated sensing method
#195Memory devices having selectively electrically connected data lines
#196Semiconductor device
#197Multi-bit memory system with adaptive read voltage controller
#198Memory system performing read of nonvolatile semiconductor memory device
#199Memory system
#200Semiconductor memory device and memory system
#201Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell
#202Flash memory error correction method and apparatus
#203Memory device and method of operating the same
#204Method and Apparatus for Controlling a Non-Volatile Digital Information Memory
#205Multi-tier detection and decoding in flash memories utilizing data from additional pages or wordlines
#206Virtual timer for data retention
#207Flash command that reports a count of cell program failures
#208Storage device operating differently according to temperature of memory
#209Methods of operating nonvolatile memory devices including erasing a sub-block
#210Semiconductor memory device and writing operation method thereof in which first memory cells of a page that are in a first group of contiguous columns are programmed and verified separately from second memory cells of the same page that are in a second group of contiguous columns that does not overlap with the first group
#211VOLTAGE CONTROL CIRCUIT FOR PROVIDING TWO VOLTAGES GENERATED BASED ON A PARAMETER CORRESPONDING TO AN INPUT SIGNAL
#212Semiconductor device including control circuit writing data to memory cell
#213Semiconductor memory device and memory system in which read voltage is set based on tracking read voltage
#214Three dimensional memory device with access signal triggering from voltage pump output levels
#215Nonvolatile memory device and storage device including nonvolatile memory device
#216Method for operating flash memory
#217Non-volatile memory device and method of fabricating the same
#218Semiconductor integrated circuit device and a method of manufacturing the same
#219Memory system performing read of nonvolatile semiconductor memory device
#220Inferring threshold voltage distributions associated with memory cells via interpolation
#221Memory system having optimal threshold voltage and operating method thereof
#222Method and apparatus for treatment of state confidence data retrieved from a non-volatile memory array
#223Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell
#224Error correction code processing and data shaping for reducing wear to a memory
#225Nonvolatile memory device and data storage device including the same
#226Semiconductor memory device and writing operation method thereof
#227Flash memory data storage device and programming method thereof
#228Memory devices with a transistor that selectively connects a data line to another data line
#229Data storage device and operating method thereof
#230Nonvolatile memory device and data storage device including the same
#231Memory module including on-die termination circuit and control method thereof
#232Data retention charge loss sensor
#233Semiconductor memory device, erasing methods thereof, and data storage device including the same
#234Memory device and method of operating the same
#235Non-volatile memory with supplemental select gates
#236Semiconductor integrated circuit device and a method of manufacturing the same
#237Memory system
#238Memory device, memory system and method of operating memory device
#239Memory system performing read of nonvolatile semiconductor memory device
#240Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell
#241Operating method of nonvolatile memory and method of controlling nonvolatile memory
#242Non-volatile memory device, operating method thereof, memory system including the non-volatile memory device, and operating method of the memory system
#243Programming schemes for multi-level analog memory cells
#244System and method for memory integrated circuit chip write abort indication
#245Memory device with a driving circuit comprising transistors each having two gate electrodes and an oxide semiconductor layer
#246Method, electronic device and controller for recovering array of memory cells
#247Network of electronic appliances and a semiconductor device in the network
#248Apparatus and methods of operating memory for exact and inexact searching of feature vectors
#249Memory control circuit unit, memory storage apparatus and data accessing method
#250Memory device
#251Program verify for non-volatile storage
#252Storage devices and methods of operating storage devices
#253Boundary word line search and open block read methods with reduced read disturb
#254Nonvolatile memory device and method of operating the same
#255Pre-program detection of threshold voltages of select gate transistors in a memory device
#256Inferring threshold voltage distributions associated with memory cells via interpolation
#257Semiconductor memory device to selectively perform a single sensing operation or a multi-sensing operation
#258Programming dummy data into bad pages of a memory system and operating method thereof
#259Multi-stage decoder
#260Generating soft read values using multiple reads and/or bins
#261Read-threshold calibration in a solid state storage system
#262Optimal read threshold estimation
#263Memory system and method including determining a read voltage based on program order information and a plurality of mapping tables
#264Non-volatile semiconductor memory adapted to store a multi-valued data in a single memory cell
#265Storage device and operating method of storage device
#266Techniques for improving reliability and performance of partially written memory blocks in modern flash memory systems
#267Method and device for temperature-based data refresh in non-volatile memories
#268Storage devices and methods of operating storage devices
#269System and method of using multiple read operations
#270Retention logic for non-volatile memory
#2713D stacked memory array and method for determining threshold voltages of string selection transistors
#272Look ahead read method for non-volatile memory
#273Reduced timing and read verifying operation for non-volatile memory device
#274Reading method for a cell string
#275Multiple programming pulse per loop programming and verification method for non-volatile memory devices
#276Nonvolatile memory and data writing method
#277Removable memory card type detection systems and methods
#278Flash command that reports a count of cell program failures
#279Operating method of storage device
#280Semiconductor integrated circuit device and a method of manufacturing the same
#281Flash-memory low-speed read mode control circuit
#282Operating method of nonvolatile memory and method of controlling nonvolatile memory
#283Flash multiple-pass write with accurate first-pass write
#284Method and device for temperature-based data refresh in non-volatile memories
#285Systems and methods for hard error reduction in a solid state memory device
#286Implementing ECC control for enhanced endurance and data retention of flash memories
#287Implementing ECC control for enhanced endurance and data retention of flash memories
#288Eliminating or reducing programming errors when programming flash memory cells
#289Memory system changing a memory cell read voltage upon detecting a memory cell read error
#290Threshold estimation using bit flip counts and minimums
#291Solid state storage device and sensing voltage setting method thereof
#292Hot-carrier injection programmable memory and method of programming such a memory
#293Inter-cell interference cancellation
#294Non-volatile memory programming
#295Method and system for programming non-volatile memory cells based on programming of proximate memory cells
#296Outputting a particular data quantization from memory
#297Non-volatile semiconductor memory adapted to store a multi-valued data in a single memory cell
#298Dynamic program window determination in a memory device
#299Circuit arrangement and method for operating a circuit arrangement
#300Methods and apparatuses for in-system field repair and recovery from memory failures