199662 ⎘
Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using magnetic or inductive elements
MEMORY DEVICE INCLUDING OTP (ONE TIME PROGRAMMABLE) CELLS AND METHOD OF OPERATING THE SAME
#2MEMORY DEVICE
#3MEMORY DEVICE AND METHOD OF OPERATING THE MEMORY DEVICE
#4MEMORY DEVICE WHICH HAS OPTIMAL REFERENCE RESISTANCE VALUE ACCORDING TO I/O UNIT
#5METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
#6Memory with one-time programmable (OTP) cells
#7OPERATING METHOD OF PHYSICALLY UNCLONABLE FUNCTION MAGNETIC MEMORY DEVICE
#8MJT based anti-fuses with low programming voltage
#9Semiconductor devices including reversible and one-time programmable magnetic tunnel junctions
#10METHOD AND APPARATUS FOR USING REFERENCE RESISTOR IN ONE-TIME PROGRAMMABLE MEMORY OF AN ARTIFICIAL INTELLIGENCE INTEGRATED CIRCUIT
#11Adaptive reference scheme for magnetic memory applications
#12Adaptive reference scheme for magnetic memory applications
#13OTP cell with reversed MTJ connection
#14Semiconductor devices including reversible and one-time programmable magnetic tunnel junctions
#15Programming of non-volatile memory subjected to high temperature exposure
#16One-time programmable device with integrated heat sink
#17Implementation of a one time programmable memory using a MRAM stack design
#18OTP cell with reversed MTJ connection
#19Resistance-based memory cells with multiple source lines
#20Physically unclonable function based on breakdown voltage of metal-insulator-metal device
#21Field programming method for magnetic memory devices
#22Error detection and correction of one-time programmable elements
#23OTP cell with reversed MTJ connection
#24OTP scheme with multiple magnetic tunnel junction devices in a cell
#25Low cost programmable multi-state device
#26Non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction
#27Generating a non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction
#28HIGH DENSITY RECONFIGURABLE SPIN TORQUE NON-VOLATILE MEMORY
#29Magnetic memory system using MRAM-sensor
#30Programmable magnetic read only memory (MROM)
#31Programming matrix
#32Printed magnetic rom-mprom
#33Antifuse circuit and method for selectively programming thereof
#34Read-only magnetic memory device mrom
#35Antifuse circuit
#36One-time programming (OTP) magneto-resistive random access memory (MRAM) bit cells in a physically unclonable function (PUF) memory in breakdown to a memory state from a previous read operation to provide PUF operations