199555 ⎘
Digital stores characterised by the use of storage elements not covered by groups , , or using resistive RAM [RRAM] elements; Auxiliary circuits; Reading or sensing circuits or methods Read destroying or disturbing the data
Neural network memory
#2Mitigating write disturbance errors of phase-change memory module
#3Voltage profile for reduction of read disturb in memory cells
#4Neural network memory
#5Resistance variable memory sensing using programming signals
#6Apparatuses and methods of reading memory cells
#7Memory device for generating a compensation current based on a difference between a first read voltage and a second read voltage and a method of operating the same
#8Apparatuses and methods of reading memory cells
#9Resistive memory sensing
#10Semiconductor memory device
#11Nonvolatile memory device
#12Resistance variable memory sensing using programming signals
#13Method for reading out a resistive memory cell and a memory cell for carrying out the method
#14Electronic device and method for operating electronic device
#15One time accessible (OTA) non-volatile memory
#16Resistive memory sensing
#17Resistance variable memory sensing
#18Nonvolatile storage device and method of controlling the same
#19State determination in resistance variable memory
#20Resistance variable memory sensing using programming signals
#21Electronic device and method for operating electronic device
#22Apparatus to store data and methods to read memory cells
#23Resistive memory sensing
#24Resistive random-access memory devices
#25Operating method for memory device and memory array and operating method for the same
#26Resistance-changing memory device
#27Reading a phase change memory
#28Reading a phase change memory
#29Memory device and method for sensing and fixing margin cells
#30Semiconductor memory device rewriting data after execution of multiple read operations
#31Resistance-changing memory device
#32INTEGRATED CIRCUIT INCLUDING MEMORY HAVING LIMITED READ
#33Reading a phase change memory
#34Integrated circuit having a resistively switching memory and method
#35Reading and writing method for non-volatile memory with multiple data states
#36Crossbar-memory systems and methods for writing to and reading from crossbar memory junctions of crossbar-memory systems
#37Non-volatile memory device
#38Speculative writeback for read destructive memory
#39Reading a phase change memory
#40Semiconductor integrated device
#41Semiconductor memory device having a voltage-controlled-oscillator-based readout circuit
#42Programmable structure, an array including the structure, and methods of forming the same
#43Programmable structure, an array including the structure, and methods of forming the same
#44Molecular memory arrays and devices
#45Readout circuit for semiconductor memory device based on a number of pulses generated by a voltage-controlled oscillator