199563 ⎘
Digital stores characterised by the use of storage elements not covered by groups , , or using resistive RAM [RRAM] elements; Auxiliary circuits; Verifying circuits or methods Verify correct writing whilst writing is in progress, e.g. by detecting onset or cessation of current flow in cell and using the detector output to terminate writing
Memory circuit structure and method of operating memory circuit structure
#2Set-while-verify circuit and reset-while verify circuit for resistive random access memory cells
#3Resistive random access memory device
#4Data write-in method and non-volatile memory
#5Resistive memory apparatus and method for writing data thereof
#6Random code generator with non-volatile memory
#7Resistive random access memory device
#8Writing multiple levels in a phase change memory
#9Writing multiple levels in a phase change memory
#10Methods, articles, and devices for pulse adjustments to program a memory cell
#11Resistive random access memory device
#12Writing multiple levels in a phase change memory
#13Writing multiple levels in a phase change memory
#14NONVOLATILE MEMORY APPARATUS AND VERIFICATION WRITE METHOD THEREOF FOR REDUCING PROGRAM TIME
#15Writing multiple levels in a phase change memory
#16Writing multiple levels in a phase change memory
#17Real-time update method for a differential memory, differential memory and electronic system
#18Resistive random access memory (RRAM) device, write verify method and reverse write verify method thereof
#19Three-terminal metastable symmetric zero-volt battery memristive device
#20Methods, articles, and devices for pulse adjustment to program a memory cell
#21Resistive random access memory device
#22Semiconductor memory device
#23Architectures and layouts for an array of resistive random access memory cells and read and write methods thereof
#24Memory systems and memory programming methods
#25Memory systems and memory programming methods
#26Resistive memory transition monitoring
#27Memristive device based on tunable schottky barrier
#28Writing multiple levels in a phase change memory
#29Writing multiple levels in a phase change memory
#30Storage device and control method thereof
#31Circuits and methods for preventing over-programming of ReRAM-based memory cells
#32Writing multiple levels in a phase change memory
#33Memory with margin current addition and related methods
#34Semiconductor memory system and operating method thereof
#35Resistive random access memory (RRAM) cell filament formation using current waveforms
#36Data-write device for resistance-change memory element
#37Methods, articles, and devices for pulse adjustment to program a memory cell
#38Nonvolatile memory apparatus and verification write method thereof for reducing program time
#39Resistive memory transition monitoring
#40Memory systems and memory programming methods
#41Memory device and operating method for resistive memory cell
#42Semiconductor storage device and driving method thereof
#43Regulating memristor switching pulses
#44Phase change memory with an incrementally ramped write-reference voltage and an incrementally ramped read-reference voltage
#45Nonvolatile semiconductor memory device and its operation program
#46Resistance random access memory with accurate forming procedure, operating method thereof and operating system thereof
#47Semiconductor memory device including a resistance change element and a control circuit for changing resistance of the resistance change element
#48Electronic device
#49Stress trim and modified ISPP procedures for PCM
#50Apparatuses and methods for sensing using an integration component
#51Memory systems and memory programming methods
#52Methods, articles and devices for pulse adjustments to program a memory cell
#53Resistive memory devices and methods of controlling resistive memory devices according to selected pulse power specifications
#54Resistive memory with program verify and erase verify capability
#55Device and method for writing data to a resistive memory
#56Resistive memory device and method of operating the resistive memory device
#57Memory systems and memory programming methods
#58Writing multiple levels in a phase change memory
#59Operating resistive memory cell
#60Writing multiple levels in a phase change memory using a write reference voltage that incrementally ramps over a write period
#61Memory systems and memory programming methods
#62Apparatus and methods for forming a memory cell using charge monitoring
#63Write operation method and device for phase change memory
#64Write and erase scheme for resistive memory device
#65Variable resistance nonvolatile memory device and method for writing into the same
#66Electronic device
#67Write control circuits and write control methods
#68Method and apparatus for adaptive timing write control in a memory
#69Non-volatile memory system with power reduction mechanism and method of operation thereof
#70Variable resistance memory device and related method of operation
#71Circuit arrangement and a method of writing states to a memory cell
#72Methods, articles and devices for pulse adjustments to program a memory cell
#73Method and circuit for switching a memristive device
#74Method and circuit for switching a memristive device in an array
#75Memory system with data line switching scheme
#76Write and erase scheme for resistive memory device
#77Memory system with data line switching scheme
#78Variable resistance device, semiconductor device including the variable resistance device, and method of operating the semiconductor device
#79Reset circuit for resistive memory device
#80Memory array with write feedback
#81Semiconductor memory device
#82Semiconductor storage device including variable resistive elements
#83Write and erase scheme for resistive memory device
#84Nonvolatile semiconductor memory device
#85MEMRISTOR ADJUSTMENT USING STORED CHARGE
#86Programmable resistance memory with feedback control
#87Variable resistance nonvolatile storage device
#88Variable resistance memory device with trigger circuit for set/reset write operations
#89Reading phase change memories
#90Semiconductor memory device and method of operating the same
#91SEMICONDUCTOR MEMORY DEVICE
#92Variable resistance memory devices and methods of programming variable resistance memory devices
#93Semiconductor device
#94Memory system with data line switching scheme
#95Non-volatile memory read/write verify
#96Program circuit, semiconductor integrated circuit, voltage application method, current application method, and comparison method
#97Programmable resistance memory with feedback control
#98Set and reset detection circuits for reversible resistance switching memory material
#99Smart detection circuit for writing to non-volatile storage
#100Memory and writing method thereof
#101Semiconductor memory device
#102Method and apparatus for an integrated circuit with programmable memory cells, data system
#103Reading phase change memories
#104Semiconductor device
#105Circuits and methods for adaptive write bias driving of resistive non-volatile memory devices
#106Methods of programming a resistive memory device
#107Programmable memory device circuit
#108Reading phase change memories
#109Device and method for pulse width control in a phase change memory device
#110Storage device and semiconductor device
#111Programming of programmable resistive memory devices
#112Adaptive programming technique for a re-writable conductive memory device
#113Semiconductor device
#114Staggered write and verify for phase change memory