199569 ⎘
Digital stores characterised by the use of storage elements not covered by groups , , or using resistive RAM [RRAM] elements; Auxiliary circuits; Writing or programming circuits or methods Write by generating heat in the surroundings of the memory material, e.g. thermowrite
VARIABLE RESISTANCE NONVOLATILE STORAGE DEVICE AND METHOD FOR DRIVING VARIABLE RESISTANCE NONVOLATILE STORAGE ELEMENT
#2Phase-change memory cell
#3Chip containing an onboard non-volatile memory comprising a phase-change material
#4LOW LOSS MULTISTATE PHOTONIC MEMORIES
#5Phase-change material-based XOR logic gates
#6GLOBAL HEATER FOR PHASE CHANGE MEMORY
#7Nonvolatile phase change material logic device
#8Nonvolatile tunable capacitive processing unit
#9Resistance change device and storage device
#10Integrated switch using stacked phase change materials
#11PCRAM analog programming by a gradual reset cooling step
#12Phase-change material-based XOR logic gates
#13Resistive element for PCM RPU by trench depth patterning
#14Integrated reactive material erasure element with phase change memory
#15Phase-change memory cell
#16Tunable forming voltage for RRAM device
#17PCRAM analog programming by a gradual reset cooling step
#18Memory device having separate programming and resistance readout control
#19Memory cell comprising a phase-change material
#20Memory cell
#21Resistive memory apparatus and operating method thereof
#22Devices and methods to program a memory cell
#23Circuits for reducing RF signal interference and for reducing DC power loss in phase-change material (PCM) RF switches
#24Multistage set procedure for phase change memory
#25Methods, apparatuses, and circuits for programming a memory device
#26Devices and methods to program a memory cell
#27Chip containing an onboard non-volatile memory comprising a phase-change material
#28Memory cell comprising a phase-change material
#29Methods, apparatuses, and circuits for programming a memory device
#30Memory cells having a plurality of resistance variable materials
#31Thermal hardware-based data security device that permanently erases data by using local heat generation phenomenon and method thereof
#32Variable resistance memory device and method of manufacturing the same
#33Phase change memory apparatus
#34Method for writing, reading and erasing data of phase change memory apparatus
#35TEMPERATURE GRADIENTS FOR CONTROLLING MEMRISTOR SWITCHING
#36Ion-based nanoelectric memory
#37Devices and methods to program a memory cell
#38Multistage set procedure for phase change memory
#39Methods, apparatuses, and circuits for programming a memory device
#40Systems having a resistive memory device
#41Methods of programming memories having a shared resistance variable material
#42Anti-fuses memory cell and memory apparatus
#43Temperature gradients for controlling memristor switching
#44Memory cells having a plurality of resistance variable materials
#45Memories having a shared resistance variable material
#46Multistage set procedure for phase change memory
#47Integrated reactive material erasure element with phase change memory
#48Non-volatile memory element with thermal-assisted switching control
#49Memory cells having a plurality of resistance variable materials
#50Method for switching memory resistance by near-infrared laser beam
#51Multistage set procedure for phase change memory
#52Method, system, and device for heating a phase change memory cell
#53Writable device based on alternating current
#54Memory device and method for thermoelectric heat confinement
#55Read-write non-erasable memory with laser recording and method of recording
#56Semiconductor system including semiconductor memory apparatus and temperature control method thereof
#57Devices and methods to program a memory cell
#58Semiconductor memory device
#59Phase change memory cell
#60Phase change memory cell with self-aligned vertical heater and low resistivity interface
#61Nonvolatile memory cells programable by phase change and method
#62Method, system, and device for heating a phase change memory cell
#63Memory cells having a plurality of resistance variable materials
#64Semiconductor memory apparatus and temperature control method thereof
#65Semiconductor memory with integrated biologic element
#66Memories and methods of operating memories having memory cells sharing a resistance variable material
#67Methods, apparatuses, and circuits for programming a memory device
#68Semiconductor integrated circuit device, method of manufacturing the same, and method of driving the same
#69Semiconductor intergrated circuit device, method of manufacturing the same, and method of driving the same
#70Phase change memory devices and methods comprising gallium, lanthanide and chalcogenide compounds
#71Phase change memory thermal management with electrocaloric effect materials
#72Memory cells having a plurality of resistance variable materials
#73Memory programming to reduce thermal disturb
#74Method, system, and device for heating a phase change memory (PCM)cell
#75Phase-change random access memory device having multi-levels and method of manufacturing the same
#76Phase-change memory cell
#77Phase change memory devices, method for encoding, and methods for storing data
#78Resistor thin film MTP memory
#79Methods, apparatuses, and circuits for programming a memory device
#80Semiconductor intergrated circuit device, method of manufacturing the same, and method of driving the same
#81Non-volatile memory cell including a resistivity change material
#82Memory cells
#83Resistance change nonvolatile semiconductor memory device
#84Devices and methods to program a memory cell
#85Diamond type quad-resistor cells of PRAM
#86Write bandwidth in a memory characterized by a variable write time
#87Thermo programmable resistor based ROM
#88Phase change device for interconnection of programmable logic device
#89Memory cells and methods of forming memory cells
#90Resistance change type memory
#91Phase change memory device having a bent heater and method for manufacturing the same
#92Self-repairing memristor and method
#93Semiconductor memory device
#94Energy-efficient set write of phase change memory with switch
#95Double-pulse write for phase change memory
#96Manufacturing a phase change memory device having a ring heater
#97Embedded phase-change memory and method of fabricating the same
#98Bias temperature instability-influenced storage cell
#99Phase change memory cell with self-aligned vertical heater and low resistivity interface
#100Diamond type quad-resistor cells of PRAM
#101Shallow trench type quadri-cell of phase-change random access memory (PRAM)
#102Electric device comprising phase change material and heating element
#103Phase change memory
#104Memory device structures including phase-change storage cells
#105Phase change memory device having a bent heater and method for manufacturing the same
#106Multilayer storage class memory using externally heated phase change material
#107Method of fabricating a phase change memory and phase change memory
#108Phase change memory
#109Heating center PCRAM structure and methods for making
#110Memory element with thermoelectric pulse
#111Method for driving a phase change memory device using various write conditions
#112Method for driving multi-level data to a phase change memory device
#113Phase change memory device and operating method thereof
#114Phase change memory device having multiple reset signals and operating method thereof
#115PHASE CHANGE MATERIAL STRUCTURES
#116RESISTANCE CHANGE MEMORY DEVICE
#117Memory device, data recording method, and IC tag
#118PROGRAMMABLE FUSE/NON-VOLATILE MEMORY STRUCTURES USING EXTERNALLY HEATED PHASE CHANGE MATERIAL
#119Phase change memory devices and methods for manufacturing the same
#120Method to prevent overreset
#121Programmable fuse/non-volatile memory structures using externally heated phase change material
#122Phase change memory devices including carbon-containing adhesive pattern
#123Memory device including thermal conductor located between programmable volumes
#124Electrochemical memory with heater
#125Semiconductor memory device and method for fabricating semiconductor memory device
#126Ring heater for a phase change memory device
#127Phase change memory
#128PMC memory with improved retention time and writing speed
#129Novel chalcogenide material, switching device and array of non-volatile memory cells
#130Multilevel phase-change memory element and operating method
#131Phase change memory cell with high read margin at low power operation
#132Phase change memory cell with high read margin at low power operation
#133Phase change memory devices and methods comprising gallium, lanthanide and chalcogenide compounds
#134Embedded phase-change memory and method of fabricating the same
#135Semiconductor memory device having phase change memory cells arranged in a checker manner
#136Phase change memory device and method for manufacturing phase change memory device
#137Non-volatile memory device conducting comparison operation
#138Phase change memory device and method of forming the same
#139Method and structure for high performance phase change memory
#140Method and device for driving solid electrolyte cells
#141Non-volatile memory device conducting comparison operation
#142Phase change memory cell with high read margin at low power operation
#143Write-once nonvolatile phase change memory array
#144Thin film layer, heating electrode, phase change memory including thin film layer and methods for forming the same
#145Switching element, line-switching device and logic circuit
#146Phase change memory device and method of operating the same
#147Multilevel phase-change memory element and operating method
#148Vertical elevated pore phase change memory
#149Process for manufacturing integrated resistor and phase-change memory element including this resistor
#150Indirect switching and sensing of phase change memory cells
#151Heating elements for a storage device
#152Non-volatile memory device conducting comparison operation
#153Method to selectively increase the top resistance of the lower programming electrode in a phase-change memory cell and structures obtained thereby
#154Non-volatile memory cell comprising a dielectric layer and a phase change material in series
#155Electrochemical random access memory device with contact layer as a heat source
#156PCRAM analog programming by a gradual reset cooling step