Electric element, switching element, memory element, switching method and memory method

Switching materials comprising mixed nanoscopic particles and carbon nanotubes and method of making and using the same

Memories with improved write current

Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance

Resistive sense memory array with partial block update capability

Multilevel phase change memory operation

Phase change memory program method without over-reset

Resistance variable memory apparatus

Non-volatile memory with metal-polymer bi-layer

Non-volatile memory array with resistive sense element block erase and uni-directional write

Continuous programming of non-volatile memory

Set and reset detection circuits for reversible resistance switching memory material

Nonvolatile memory device and method of driving the same

Nonvolatile semiconductor memory device

Nonvolatile semiconductor memory device and writing method of the same

METHOD FOR PROGRAMMING PHASE-CHANGE MEMORY AND METHOD FOR READING DATE FROM THE SAME

MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

Resistance change memory device

Semiconductor memory device and information processing system

Resistance change nonvolatile memory device

Resistance variable memory apparatus

Semiconductor memory device

Nonvolatile memory devices having variable-resistance memory cells and methods of programming the same

Memory device, memory system having the same, and programming method of a memory cell

Variable integrated analog resistor

Semiconductor memory device

Vertical string phase change random access memory device

Nonvolatile memory apparatus and nonvolatile data storage medium

Memory device and method of programming thereof

Electric element, memory device, and semiconductor integrated circuit

Nonvolatile semiconductor memory device and reading method of nonvolatile semiconductor memory device

Pulse reset for non-volatile storage

Capacitive discharge method for writing to non-volatile memory

Semiconductor device and manufacturing method of the same

Multi-terminal reversibly switchable memory device

Two-Terminal Reversibly Switchable Memory Device

Phase change random access memory and methods of manufacturing and operating same

Memory devices, memory device constructions, constructions, memory device forming methods, current conducting devices, and memory cell programming methods

INTEGRATED CIRCUIT AND METHOD FOR SWITCHING A RESISTIVELY SWITCHING MEMORY CELL

Integrated circuit with an array of resistance changing memory cells

Operating method of electrical pulse voltage for RRAM application

Nonvolatile semiconductor memory device

Semiconductor memory device

Seasoning phase change memories

Non-volatile multi-level re-writable memory cell incorporating a diode in series with multiple resistors and method for writing same

Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same

Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same

System and method of operation for resistive change memory

Semiconductor RAM device with writing voltage higher than withstand voltage of select transistor

Nonvolatile semiconductor memory device

Switchable memory diode—a new memory device

Semiconductor device

Resistive memory device for programming resistance conversion layers and method thereof

Functional molecular element

Nonvolatile semiconductor storage device and data writing method therefor

Non-volatile register having a memory element and register logic vertically configured on a substrate

Electronic device, method of manufacturing the same, and storage device

Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same

Memory cells, memory cell programming methods, memory cell reading methods, memory cell operating methods, and memory devices

Method of programming cross-point diode memory array

Semiconductor memory device and method of writing into semiconductor memory device

Large capacity one-time programmable memory cell using metal oxides

Resistance type memory device

Semiconductor memory device with variable resistance elements

Drive method of nanogap switching element and storage apparatus equipped with nanogap switching element

Operation method for multi-level switching of metal-oxide based RRAM

Non-volatile memory device using variable resistance element with an improved write performance

Method and apparatus for accessing a phase-change memory

Semiconductor memory device

Non-volatile memory device including diode-storage node and cross-point memory array including the non-volatile memory device

Variable resistance element

PHASE CHANGE MEMORY DEVICE WITH IMPROVED PERFORMANCE THAT MINIMIZES CELL DEGRADATION

Nonvolatile semiconductor memory device

Multi-level phase change memory device, program method thereof, and method and system including the same

Semiconductor memory device for writing data to multiple cells simultaneously and refresh method thereof

Phase change memory device, manufacturing method thereof and operating method thereof

Resistive memory cell array with common plate

Semiconductor memory device and method of writing into the same

Non-volatile memory device and method for writing data thereto

Nonvolatile Semiconductor Memory Device

Nonvolatile memory device

Nonvolatile semiconductor memory device

Multi-resistive state memory device with conductive oxide electrodes

Method for driving a phase change memory device using various write conditions

Phase change memory device using a multiple level write voltage

Method for driving multi-level data to a phase change memory device

Phase change memory device and operating method thereof

Phase change memory device having write driving control signal corresponding to set/reset write time

Resistance change memory with current control and voltage control during a write operation, and write method of the same

Threshold device for a memory array

Method for driving phase change memory device

Block erase for phase change memory

Program method with locally optimized write parameters

Method of making 3D R/W cell with reduced reverse leakage

High forward current diodes for reverse write 3D cell

Semiconductor memory device and method of operation

Process for erasing chalcogenide variable resistance memory bits

Method for fabricating multi-resistive state memory devices

Fabrication of recordable electrical memory

Recordable electrical memory

Recordable electrical memory

Programming a normally single phase chalcogenide material for use as a memory of FPLA

Integrated Circuit, Method of Operating an Integrated Circuit, Memory Cell Array, and Memory Module

Phase-change memory device that stores information in a non-volatile manner by changing states of a memory material

Integrated circuit having a resistively switching memory and method

Method for programming phase-change memory and method for reading date from the same

Memory element comprising an organic compound and an insulator

Nonvolatile memory element and production method thereof and storage memory arrangement

INTEGRATED CIRCUIT HAVING A MEMORY ARRAY

Integrated circuit, method of reading data stored within a memory device of an integrated circuit, method of writing data into a memory device of an integrated circuit, memory module, and computer program

Method of writing into semiconductor memory device

INTEGRATED CIRCUIT HAVING A RESISTIVE MEMORY

Method to tighten set distribution for PCRAM

Resistance random access memory having common source line

Non-volatile resistance changing for advanced memory applications

NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF WRITING INTO THE SAME

Bi-directional resistive random access memory capable of multi-decoding and method of writing data thereto

Memory cell array biasing method and a semiconductor memory device

Non-volatile memory including sub cell array and method of writing data thereto

Method for multilevel programming of phase change memory cells using a percolation algorithm

Circuits and methods for adaptive write bias driving of resistive non-volatile memory devices

Nonvolatile memory devices having multi-filament variable resistivity memory cells therein

Memory device, semiconductor device, and driving method therof

Methods of programming and erasing resistive memory devices

Method of programming memory device

Structure and method for biasing phase change memory array for reliable writing

Memory device including electrical circuit configured to provide reversible bias across the PMC memory cell to perform erase and write functions

Nonvolatile memory devices using variable resistors as storage elements and methods of operating the same

NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF WRITING INTO THE SAME

Resistance memory element and nonvolatile semiconductor memory

Phase changing memory device

Combined memories in integrated circuits

Reading and writing method for non-volatile memory with multiple data states

Organic-Complex Thin Film For Nonvolatile Memory Applications

Resistance type memory device and fabricating method and operating method thereof

Crossbar-memory systems and methods for writing to and reading from crossbar memory junctions of crossbar-memory systems

Storage device with reversible resistance change elements

SnSe-based limited reprogrammable cell

Phase change memory erasable and programmable by a row decoder

Methods of programming a resistive memory device

Nonvolatile memory device and related method of operation

Semiconductor memory device

Transmission/reception semiconductor device with memory element and antenna on same side of conductive adhesive

Electrical thin film memory

Apparatus for reading a multi-level passive element memory cell array

Nonvolatile semiconductor memory device

Semiconductor memory device

Integrated circuit with memory having a step-like programming characteristic

Operation method of nonvolatile memory device induced by pulse voltage

Memory cell having a switching active material, and corresponding memory device

Semiconductor memory device

Programming methods to increase window for reverse write 3D cell

Memory apparatus

Resistance change memory device

Resistance change memory device

Resistance change memory device

Resistance change memory device

Resistance change memory device having a variable resistance element formed of a first and second composite compound for storing a cation

Multilevel phase-change memory element and operating method

Programming a normally single phase chalcogenide material for use as a memory or FPLA

Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance

Method of driving storage device

Programmable structure, a memory, a display and a method for reading data from a memory cell

Nonvolatile semiconductor memory device and data writing method

Method of controlling the resistance in a variable resistive element and non-volatile semiconductor memory device

Resistive organic memory device and fabrication method thereof

Phase-change random access memory and programming method

Switching element

Nonvolatile carbon nanotube memory device using multiwall carbon nanotubes and methods of operating and fabricating the same

Memory circuit including a resistive memory element and method for operating such a memory circuit

Resistive memory device and method for writing to a resistive memory cell in a resistive memory device

Nonvolatile semiconductor memory device

Method for forming a memory cell comprising a semiconductor junction diode crystallized adjacent to a silicide

Switchable memory diode—a new memory device

Phase change random access memory, boosting charge pump and method of generating write driving voltage

Method for making a p-i-n diode crystallized adjacent to a silicide in series with a dielectric antifuse

Phase change memory devices using magnetic resistance effect, methods of operating and methods of fabricating the same

Storage device and semiconductor device

P-i-n diode crystallized adjacent to a silicide in series with a dielectric antifuse

Resistance variable memory element with threshold device and method of forming the same

Phase change random access memory device having variable drive voltage circuit

Method for writing data into a memory cell of a conductive bridging random access memory, memory circuit and CBRAM memory circuit

Constant-weight-code-based addressing of nanoscale and mixed microscale/nanoscale arrays

Resistance variable memory element with threshold device and method of forming the same

Memory device including electrical circuit configured to provide reversible bias across the PMC memory cell to perform erase and write functions

Semiconductor storage device

Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance

Phase change random access memory (PRAM) device having variable drive voltages

Apparatus and method for programming an array of nonvolatile memory cells including switchable resistor memory elements

Process for erasing chalcogenide variable resistance memory bits

Reverse-bias method for writing memory cells in a memory array

Memory cell with high-K antifuse for reverse bias programming

Sensing of resistance variable memory devices

Semiconductor integrated circuit device

Method for fabricating a variable-resistance element including heating a RMCoOperovskite structure in an oxygen atmosphere

Three-dimensional programmable resistance memory device with a read/write circuit stacked under a memory cell array

Method for operating an integrated circuit having a resistivity changing memory cell

Semiconductor device and manufacturing method thereof and method for writing memory element

Resistive memory device with improved data retention and reduced power

Nonvolatile memory cell comprising a diode and a resistance-switching material

Rewriteable memory cell comprising a diode and a resistance-switching material

Memory device and semiconductor device

Multi-resistive state element with reactive metal

Design and operation of a resistance switching memory cell with diode

Probe storage device, system including the device, and methods of forming and using same

Semiconductor device and driving method thereof

High density memory device

Phase change memory device

Semiconductor device including a memory element

Integrated semiconductor memory with an arrangement of nonvolatile memory cells, and method

SnSe-based limited reprogrammable cell

PMC memory circuit and method for storing a datum in a PMC memory circuit

Memory using mixed valence conductive oxides

Memory cell array biasing method and a semiconductor memory device

Switching element method of driving switching element rewritable logic integrated circuit and memory

Method of driving memory device to implement multiple states

Electric device using solid electrolyte

Memory device including dendrimer

Structure and method for biasing phase change memory array for reliable writing

Programmable semiconductor memory device

Memory device having a semiconducting polymer film

Storage and semiconductor device

Non-volatile memory element and production method thereof and storage memory arrangement

Multilevel phase-change memory element and operating method

Semiconductor memory

Nonvolatile phase change memory device and biasing method therefor

Resistively switching nonvolatile memory cell based on alkali metal ion drift

Sensing of resistance variable memory devices

Programming of programmable resistive memory devices

Systems and methods for adjusting programming thresholds of polymer memory cells

Polymer memory device with variable period of retention time

Driving method of variable resistance element and memory device

Switchable memory diode-a new memory device

Resistance variable memory elements based on polarized silver-selenide network growth

1T1R resistive memory array with chained structure

Memory device and method of making the same

Programmable microelectronic devices and methods of forming and programming same

Polymer dielectrics for memory element array interconnect

Memory device

Memory device having variable resistive memory element

Multi-resistive state element with reactive metal

Resistance variable memory elements based on polarized silver-selenide network growth

Molecular memory arrays and devices

Conductive memory array having page mode and burst mode write capability

Semiconductor integrated circuit device

Nonvolatile semiconductor memory device

Memory cell comprising a semiconductor junction diode crystallized adjacent to a silicide

Storage device

Programmable sub-surface aggregating metallization structure and method of making same

Molecular memory cell

Cross point array using distinct voltages

Storage device with resistive memory cells enduring repetitive data writing

Non-volatile multi-stable memory device and methods of making and using the same

Method and apparatus for sensing resistive memory state

Memory device having a semiconducting polymer film

Electronic device and method of operating memory cell in the electronic device

Adjustment of read and write voltages using a space between threshold voltage distributions

Semiconductor memory device

Method for obtaining optimal operating condition of resistive random access memory

Resistive memory device having a retention layer

Resistive memory device having a template layer

Compensating for parasitic voltage drops in circuit arrays

Resistive memory element

Integrated circuits with programmable non-volatile resistive switch elements

Memory cells including vertically oriented adjustable resistance structures