199575 ⎘
Digital stores characterised by the use of storage elements not covered by groups , , or using resistive RAM [RRAM] elements; Auxiliary circuits; Writing or programming circuits or methods Write using strain induced by, e.g. piezoelectric, thermal effects
PIEZOELECTRIC MEMORY
#2Phase-change memory
#3Memory and electronic devices with reduced operational energy in chalcogenide material
#4Memristor devices with a thermally-insulating cladding
#5Electronic device having resistance element
#6Non-volatile, piezoelectronic memory based on piezoresistive strain produced by piezoelectric remanence
#7Mechanical forming of resistive memory devices
#8Devices and methods for controlling magnetic anisotropy with localized biaxial strain in a piezoelectric substrate
#9Memory devices with reduced operational energy in phase change material and methods of operation
#10Resistance change non-volatile storage memory device and method
#11Non-volatile, piezoelectronic memory based on piezoresistive strain produced by piezoelectric remanence
#12Data storing method of non-volatile memory device by assigning an initial state to data
#13Resistance memory device and memory apparatus and data processing system
#14Phase change material cell with piezoelectric or ferroelectric stress inducer liner
#15Resistive memory device
#16SEMICONDUCTOR DEVICE
#17Phase change material cell with stress inducer liner
#18MEMORY ELEMENT HAVING ELASTICALLY DEFORMABLE ACTIVE REGION
#19Methods for forming memory devices with reduced operational energy in phase change material
#20Methods, structures, and devices for reducing operational energy in phase change memory
#21METHOD TO REDUCE RESET CURRENT OF PCM USING STRESS LINER LAYERS
#22Phase change memory
#23Phase change memory featuring ferromagnetic layers in contact with phase change layer