ClassID:

199869

G11C2207/2263 - CPC Classification

Classification description:

Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store; Control and timing of internal memory operations Write conditionally, e.g. only if new data and old data differ

Recent Application in this class:
#1
20220319578
2022-10-06

Floating body dram with reduced access energy

#2
20210035623
2021-02-04

Floating body DRAM with reduced access energy

#3
20200160908
2020-05-21

Dual demarcation voltage sensing before writes

#4
20190317855
2019-10-17

Error-correcting code memory

#5
20190066795
2019-02-28

Fast programming methods for flash memory devices

#6
20190012264
2019-01-10

Memory system and operation method thereof

#7
20180203616
2018-07-19

Nonvolatile memory device and operating method thereof

#8
20180189133
2018-07-05

Error-correcting code memory

#9
20180166120
2018-06-14

Floating body DRAM with reduced access energy

#10
20180114575
2018-04-26

Selective writes in a storage element

#11
20180113814
2018-04-26

Method and apparatus for power reduction in a multi-threaded mode

#12
20180047440
2018-02-15

Method for autocorrective writing to a multiport static random access memory device, and corresponding device

#13
20170236580
2017-08-17

Dual demarcation voltage sensing before writes

#14
20170047130
2017-02-16

Semiconductor memory cell multi-write avoidance encoding apparatus, systems and methods

#15
20170025171
2017-01-26

Phase change memory with mask receiver

#16
20160027481
2016-01-28

Storage device and operating method of storage device

#17
20150170727
2015-06-18

System and method to perform low power memory operations

#18
20150117121
2015-04-30

Semiconductor memory apparatus and data storage and power consumption

#19
20150003166
2015-01-01

Non-volatile memory device and a method of programming such device

#20
20140095785
2014-04-03

Content Aware Block Power Savings

#21
20130148428
2013-06-13

Non-volatile memory device and a method of programming such device

#22
20130055003
2013-02-28

Methods and apparatuses including a global timing generator and local control circuits

#23
20100302856
2010-12-02

NONVOLATILE MEMORY DEVICE AND METHOD OF PROGRAMMING AND READING THE SAME

#24
20090237979
2009-09-24

Semiconductor memory device and semiconductor memory system

#25
20090091968
2009-04-09

INTEGRATED CIRCUIT INCLUDING A MEMORY HAVING A DATA INVERSION CIRCUIT

#26
20090040813
2009-02-12

Phase change memory device and operating method thereof

#27
20070180184
2007-08-02

Semiconductor device and control method therefor

#28
20060248258
2006-11-02

Compensating a long read time of a memory device in data comparison and write operations

#29
20060181954
2006-08-17

Circuit and method for writing a binary value to a memory cell

#30
20060174172
2006-08-03

Toggle memory burst

#31
20050235118
2005-10-20

Power saving data storage circuit, data writing method in the same, and data storage device

#32
20050105375
2005-05-19

Magnetic random access memory

#33
20050036384
2005-02-17

Magnetic random access memory

#34
20050036354
2005-02-17

Magnetic random access memory

#35
20050030830
2005-02-10

Magnetic random access memory

#36
20050030785
2005-02-10

Magnetic random access memory