199930 ⎘
Indexing scheme relating to for features not covered by this group; Resistive cell, memory material aspects Material including silicon
Resistive Switching Devices and Methods for their Manufacture and Operation
#2Resistive random access memory device with three-dimensional cross-point structure and method of operating the same
#3Silicon over insulator two-transistor two-resistor in-series resistive memory cell
#4Resistive random access memory device with three-dimensional cross-point structure and method of operating the same
#5Light-activated switching resistor, an optical sensor incorporating a light-activated switching resistor, and methods of using such devices
#6Switching resistor and method of making such a device
#7Resistive random access memory device with three-dimensional cross-point structure and method of operating the same
#8Probabilistic event detector for fast overwrite disturb remediation in phase change media
#9SEMICONDUCTOR MEMORY DEVICE
#10RESISTIVE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
#11Conductive bridge random access memory (CBRAM) devices with low thermal conductivity electrolyte sublayer
#12Operation method of resistive memory device
#13Semiconductor memory device
#14CEM switching device
#15Memristive control circuits with current control components
#16Apparatus and methods for electrical switching
#17Switching block configuration bit comprising a non-volatile memory cell
#18Select device for memory cell applications
#19Semiconductor memory device
#20Memory device
#21Resistive random access memory cell
#22Variable resistance element and memory device
#23Apparatus and methods for electrical switching
#24Select device for memory cell applications
#25Resistive random access memory device with three-dimensional cross-point structure and method of operating the same
#26Resistance random access memory device and method for operating same
#27Device switching using layered device structure
#28Method for reading out a resistive memory cell and a memory cell for carrying out the method
#29Resistive random access memory device embedding tunnel insulating layer and memory array using the same and fabrication method thereof
#30Resistive memory device with semiconductor ridges
#31Select device for memory cell applications
#32Non-volatile resistance-switching thin film devices
#33Two stage forming of resistive random access memory cells
#34Silicon based nanoscale crossbar memory
#35Resistive switching for non volatile memory device using an integrated breakdown element
#36Non-volatile SRAM with multiple storage states
#37Multi-level memory array having resistive elements for multi-bit data storage
#38Memory device having self-aligned cell structure
#39Memory array architecture with two-terminal memory cells
#40Semiconductor memory device
#41Nonvolatile resistive memory element with an oxygen-gettering layer
#42Resistance-change memory having on-state, off-state, and intermediate state
#43Silicon based nanoscale crossbar memory
#44Semiconductor memory device
#45Non-volatile resistance-switching thin film devices
#46Device switching using layered device structure
#47Write and erase scheme for resistive memory device
#48Select device for cross point memory structures
#49Oxide memory resistor including semiconductor nanoparticles
#50Two-terminal memory with intrinsic rectifying characteristic
#51Resistive switching for non volatile memory device using an integrated breakdown element
#52Multi-level memory array having resistive elements for multi-bit data storage
#53Method and structure of monolithically integrated IC and resistive memory using IC foundry-compatible processes
#54Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof
#55Resistance-change memory
#56Nonvolatile semiconductor memory device including variable resistance element
#57Nonvolatile resistance change element
#58Memory device having self-aligned cell structure
#59Hetero-switching layer in a RRAM device and method
#60Drive method for memory element, and storage device using memory element
#61Non-volatile variable capacitive device including resistive memory cell
#62Resistor structure for a non-volatile memory device and method
#63Resistor thin film MTP memory
#64Amorphous silicon RRAM with non-linear device and operation
#65Memory array architecture with two-terminal memory cells
#66Write and erase scheme for resistive memory device
#67Nonvolatile semiconductor memory device
#68Variable resistance semiconductor memory device
#69NAND architecture having a resistive memory cell connected to a control gate of a field-effect transistor
#70Three dimensional memory system with page of data across word lines
#71Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
#72Resistive random access memory with low current operation
#73Thermo programmable resistor based ROM
#74Re-writable resistance-switching memory with balanced series stack
#75Nonvolatile resistance change device
#76Resistor structure for a non-volatile memory device and method
#77Silicon based nanoscale crossbar memory
#78Device switching using layered device structure
#79MODIFICATION OF LOGIC BY MORPHOLOGICAL MANIPULATION OF A SEMICONDUCTOR RESISTIVE ELEMENT
#80Resistive memory using SiGe material
#81P-I-N diode crystallized adjacent to a silicide in series with a dielectric material
#82Rectification element and method for resistive switching for non volatile memory device
#83Write and erase scheme for resistive memory device
#84Non-volatile variable capacitive device including resistive memory cell
#85Interface control for improved switching in RRAM
#86Diode memory
#87Non-volatile resistance-switching thin film devices
#88Information recording device and method of manufacturing the same
#89Crystalline silicon-based memristive device with multiple mobile dopant species
#90Memristive device based on current modulation by trapped charges
#91Memristor with nanostructure electrodes
#92Nonvolatile memory element and production method thereof and storage memory arrangement
#93Page register outside array and sense amplifier interface
#94Nonvolatile memory cells and nonvolatile memory devices including the same
#95Nanowire-based memristor devices
#96Semiconductor device
#97Memory device and storage apparatus
#98Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
#99Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof
#100Semiconductor memory device
#101Semiconductor memory device
#102Memory device having self-aligned cell structure
#103Variable resistance memory device
#104Rewritable memory device based on segregation/re-absorption
#105Charge retention structures and techniques for implementing charge controlled resistors in memory cells and arrays of memory
#106Method for making a P-I-N diode crystallized adjacent to a silicide in series with a dielectric antifuse
#107Memory device and storage apparatus
#108Non-volatile semiconductor storage device and method of manufacturing the same
#109Silicon based nanoscale crossbar memory
#110Silicon-based nanoscale resistive device with adjustable resistance
#111MEMORY ELEMENT AND MEMORY APPARATUS
#112Cross point memory cell with distributed diodes and method of making same
#113Non-volatile multi-level re-writable memory cell incorporating a diode in series with multiple resistors and method for writing same
#114Electronic device, method of manufacturing the same, and storage device
#115Method of programming cross-point diode memory array
#116METHOD TO FORM A REWRITEABLE MEMORY CELL COMPRISING A DIODE AND A RESISTIVITY-SWITCHING GROWN OXIDE
#117Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
#118Junction diode with reduced reverse current
#119High forward current diodes for reverse write 3D cell
#120Fabrication of recordable electrical memory
#121Recordable electrical memory
#122Recordable electrical memory
#123Nonvolatile memory element and production method thereof and storage memory arrangement
#124Method for using a mixed-use memory array
#125Mixed-use memory array
#126Memory element and semiconductor device
#127Programming methods to increase window for reverse write 3D cell
#128Programmable metallization cell structures including an oxide electrolyte, devices including the structure and method of forming same
#129Method for forming a memory cell comprising a semiconductor junction diode crystallized adjacent to a silicide
#130Method for making a p-i-n diode crystallized adjacent to a silicide in series with a dielectric antifuse
#131P-i-n diode crystallized adjacent to a silicide in series with a dielectric antifuse
#132Switchable resistive memory with opposite polarity write pulses
#133Non-volatile memory element and production method thereof and storage memory arrangement
#134Semiconductor memory
#135Polysilicon memory element
#136Fuse memory cell comprising a diode, the diode serving as the fuse element
#137Resistive semiconductor element based on a solid-state ion conductor
#138Memory device and storage apparatus
#139Memory cell comprising a semiconductor junction diode crystallized adjacent to a silicide
#140Resistive memory element
#141Switching block configuration bit comprising a non-volatile memory cell