Resistive change element arrays

Resistive change element arrays

Electronic switching element

Carbon-based volatile and non-volatile memristors

Electrostatic discharge protection devices using carbon-based diodes

Methods for programing DDR compatible open architecture resistive change element arrays

Combinational resistive change elements

Memory device

Non-linear resistive change memory cells and arrays

Variable resistance memory stack with treated sidewalls

Probabilistic event detector for fast overwrite disturb remediation in phase change media

Resistive change element arrays using a reference line

Electronic switching element

Conductive bridge random access memory (CBRAM) devices with low thermal conductivity electrolyte sublayer

Methods for forming crosspoint arrays of resistive change memory cells

Nonvolatile nanotube switches with reduced switching voltages and currents

Memory device

Memory device

Spherical complementary resistance switchable filler and nonvolatile complementary resistance switchable memory comprising the same

Select device for memory cell applications

Nonvolatile memory device including two-dimensional material and apparatus including the nonvolatile memory device

Resistive change elements incorporating carbon based diode select devices

Variable resistance memory stack with treated sidewalls

Resistive change element arrays with in situ initialization

Nonvolatile nanotube switches and systems using same

Electronic component including molecular layer

Select device for memory cell applications

DDR compatible open array architectures for resistive change element arrays

Memory Apparatus and Method of Production Thereof

Memory device

Method of fabricating memory array having divided apart bit lines and partially divided bit line selector switches

PROTON RESISTIVE MEMORY DEVICES AND METHODS

Storage element

Methods for programming and accessing DDR compatible resistive change element arrays

Methods for manufacturing carbon ribbons for magnetic devices

Non-volatile composite nanoscopic fabric NAND memory arrays and methods of making same

Select device for memory cell applications

Cross point arrays of 1-R nonvolatile resistive change memory cells using continuous nanotube fabrics

Method of operating memory array having divided apart bit lines and partially divided bit line selector switches

Memory device

Resistive random-access memory cells

Storage device and storage unit with ion source layer and resistance change layer

Phase change memory stack with treated sidewalls

Storage cell, storage device, and magnetic head

Memory devices including two-dimensional material, methods of manufacturing the same, and methods of operating the same

Magnetic resistance structure, method of manufacturing the magnetic resistance structure, and electronic device including the magnetic resistance structure

Methods for manufacturing carbon ribbons for magnetic devices

Resistive memory element based on oxygen-doped amorphous carbon

Resistive random-access memory cells

Filamentary memory devices and methods

Use of hydrocarbon nanorings for data storage

Non-volatile storage system using opposite polarity programming signals for MIM memory cell

Carbon based nonvolatile cross point memory incorporating carbon based diode select devices and MOSFET select devices for memory and logic applications

Memory cell that includes a sidewall collar for pillar isolation and methods of forming the same

Filamentary memory devices and methods

Adaptive resistive device and methods thereof

Non-volatile storage with metal oxide switching element and methods for fabricating the same

Graphene-based memory devices and methods therefor

Trap passivation in memory cell with metal oxide switching element

Method for manufacturing a carbon-based memory element and memory element

Memory device

METHODS AND APPARATUS FOR INCLUDING AN AIR GAP IN CARBON-BASED MEMORY DEVICES

Graphene valley singlet-triplet qubit device and the method of the same

Programmable read-only memory device and method of writing the same

Field programmable read-only memory device

All graphene flash memory device

Single device driver circuit to control three-dimensional memory element array

Ferromagnetic graphenes and spin valve devices including the same

Nonvolatile semiconductor memory device operating stably and method of control therein

Nonvolatile semiconductor memory device

Non-volatile graphene-drum memory chip

Integrated circuitry, switches, and methods of selecting memory cells of a memory device

Non-volatile storage system using opposite polarity programming signals for MIM memory cell

Three dimensional memory system with page of data across word lines

METHODS FOR INCREASING BOTTOM ELECTRODE PERFORMANCE IN CARBON-BASED MEMORY DEVICES

Apparatus and a method

Three-dimensional memory structures having shared pillar memory cells

Memory cell that includes a carbon-based memory element and methods of forming the same

Graphene oxide memory devices and method of fabricating the same

Single device driver circuit to control three-dimensional memory element array

Phase-Change Memory Units and Phase-Change Memory Devices Using the Same

Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same

Carbon-based memory element

MEMORY EMPLOYING DIAMOND-LIKE CARBON RESISTIVITY-SWITCHABLE MATERIAL AND METHODS OF FORMING THE SAME

SEMICONDUCTOR DEVICE

Graphene-based switching elements using a diamond-shaped nano-patch and interconnecting nano-ribbons

Photo-responsive memory resistor and method of operation

Forming and training processes for resistance-change memory cell

Non-volatile storage with metal oxide switching element and methods for fabricating the same

Resistance-switching memory cell with heavily doped metal oxide layer

Nonvolatile memory device and nonvolatile memory apparatus

Memory cell that includes a sidewall collar for pillar isolation and methods of forming the same

Memristive device having a porous dopant diffusion element

Resistance-variable memory device including carbide-based solid electrolyte membrane and manufacturing method thereof

Graphene Memory Cell and Fabrication Methods Thereof

Semiconductor memory device

Semiconductor memory device

Multilevel Nonvolatile Memory via Dual Polarity Programming

Semiconductor element

NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME

Modulation of resistivity in carbon-based read-writeable materials

Programming a memory cell with a diode in series by applying reverse bias

Method of programming a nonvolatile memory device containing a carbon storage material

Three-dimensional memory structures having shared pillar memory cells

Method of programming a nonvolatile memory cell by reverse biasing a diode steering element to set a storage element

Nonvolatile nanotube programmable logic devices and a nonvolatile nanotube field programmable gate array using same

CARBON-BASED MEMORY ELEMENTS EXHIBITING REDUCED DELAMINATION AND METHODS OF FORMING THE SAME

Nonvolatile nanotube programmable logic devices and a nonvolatile nanotube field programmable gate array using same

Nonvolatile nanotube programmable logic devices and a nonvolatile nanotube field programmable gate array using same

Nonvolatile nanotube programmable logic devices and a nonvolatile nanotube field programmable gate array using same

Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks

Nonvolatile nanotube programmable logic devices and a nonvolatile nanotube field programmable gate array using same

Integrated three-dimensional semiconductor system comprising nonvolatile nanotube field effect transistors

Memory cell that includes a carbon-based memory element and methods of forming the same

Method of Manufacturing a Resistivity Changing Memory Cell, Resistivity Changing Memory Cell, Integrated Circuit, and Memory Module

MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS OF FORMING THE SAME

MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS OF FORMING THE SAME

Memory cell that includes a carbon-based memory element and methods forming the same

Cross point memory cell with distributed diodes and method of making same

Multiple series passive element matrix cell for three-dimensional arrays

CARBON-BASED RESISTIVITY-SWITCHING MATERIALS AND METHODS OF FORMING THE SAME

METAL OXIDE RESISTIVE MEMORY AND METHOD OF FABRICATING THE SAME

Method of Operating an Integrated Circuit, and Integrated Circuit

Apparatus, method and system for reconfigurable circuitry

Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same

Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same

Memory cell that includes a carbon-based memory element and methods of forming the same

Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element, and methods of forming the same

Integrated Circuit and Method of Improved Determining a Memory State of a Memory Cell

Carbon diode array for resistivity changing memories

Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same

Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same

Memory arrays using nanotube articles with reprogrammable resistance

Non-volatile shadow latch using a nanotube switch

Integrated Circuit, Method of Operating an Integrated Circuit, Memory Cell Array, and Memory Module

Phase change memory devices including carbon-containing adhesive pattern

Reversible polarity decoder circuit

Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks

Carbon filament memory and method for fabrication

Carbon filament memory and fabrication method

Method of Forming a Phase-Change Memory Unit and Method of Manufacturing a Phase-Change Memory Device Using the Same

Method of fabricating phase change RAM including a fullerene layer

Storage node having a metal-insulator-metal structure, non-volatile memory device including a storage node having a metal-insulator-metal structure and method of operating the same

METAL OXIDE RESISTIVE MEMORY AND METHOD OF FABRICATING THE SAME

Memory arrays using nanotube articles with reprogrammable resistance

Hybrid silicon-molecular memory cell with high storage density

Methods and apparatus for three-dimensional nonvolatile memory