199961 ⎘
Indexing scheme relating to and subgroups, for features not directly covered by these groups; Reading and writing aspects of erasable programmable read-only memories Flash programming of all the cells in an array, sector or block simultaneously
First-pass continuous read level calibration
#2Semiconductor device performing block program and operating method thereof
#3Peak and average ICC reduction by tier-based sensing during program verify operations of non-volatile memory structures
#4Concurrent programming of multiple cells for non-volatile memory devices
#5First-pass dynamic program targeting (DPT)
#6Concurrent programming of multiple cells for non-volatile memory devices
#7Semiconductor memory device and method with selection transistor programming and verification mechanism
#8Method of erasing data in nonvolatile memory device, nonvolatile memory device performing the same and memory system including the same
#9First-pass dynamic program targeting (DPT)
#10First-pass continuous read level calibration
#11Method of erasing data in nonvolatile memory device, nonvolatile memory device performing the same and memory system including the same
#12First-pass continuous read level calibration
#13First-pass dynamic program targeting (DPT)
#14Concurrent programming of multiple cells for non-volatile memory devices
#15Semiconductor memory device with improved threshold voltage distribution of transistor
#16Method of erasing data in nonvolatile memory device, nonvolatile memory device performing the same and memory system including the same
#17Semiconductor memory device and method of operating the same
#18Controller and operating method thereof
#19Multi-host Intelligent block level provisioning
#20Semiconductor memory device with improved program verification reliability
#21Nonvolatile memory device, storage device including nonvolatile memory device and reading method of nonvolatile memory device
#22Semiconductor memory device with improved program verification reliability
#23Apparatuses and methods for non-volatile memory programming schemes
#24Partial block data programming and reading operations in a non-volatile memory
#25Partial block data programming and reading operations in a non-volatile memory
#26Partial block data programming and reading operations in a non-volatile memory
#27Method of improving programming precision in flash memory
#28Flash memory with improved programming precision
#29Flash storage system with write-erase abort detection mechanism
#30Data write circuit and data write method for semiconductor storage device
#31Partial block data programming and reading operations in a non-volatile memory
#32Flash storage system with write/erase abort detection mechanism
#33Non-volatile memory and write method of the same
#34Semiconductor memory device in which source line potential is controlled in accordance with data programming mode
#35Method and system for efficiently reading and programming of dual cell memory elements
#36Failure prediction by cell probing
#37Flash memory read performance