ClassID:

199962

G11C2216/18 - CPC Classification

Classification description:

Indexing scheme relating to and subgroups, for features not directly covered by these groups; Reading and writing aspects of erasable programmable read-only memories Flash erasure of all the cells in an array, sector or block simultaneously

Recent Application in this class:
#1
20230039489
2023-02-09

Semiconductor device performing block program and operating method thereof

#2
20220101938
2022-03-31

Memory system tester using test pad real time monitoring

#3
20210383873
2021-12-09

Adaptive erase voltage based on temperature

#4
20210043260
2021-02-11

Semiconductor memory device with erase control

#5
20200411129
2020-12-31

Memory system tester using test pad real time monitoring

#6
20200402587
2020-12-24

Non-volatile memory array driven from both sides for performance improvement

#7
20200365227
2020-11-19

MEMORY DEVICE AND METHOD OF OPERATING THE MEMORY DEVICE

#8
20200303403
2020-09-24

Semiconductor memory device in which memory cells are three-dimensionally arrange

#9
20190304563
2019-10-03

Memory device and operating method to determine a defective memory block

#10
20170372785
2017-12-28

Nonvolatile memory device and erasing method of nonvolatile memory device

#11
20170032846
2017-02-02

Method of programming a continuous-channel flash memory device

#12
20160049201
2016-02-18

Sub-block erase

#13
20150269070
2015-09-24

Mobile electronic device and method for clearing memory blocks based on processor determination of physical block to erase in response to GUI input from user specified time and directing controller to erase within the specified time

#14
20150003170
2015-01-01

Nonvolatile memory device and an erase method thereof

#15
20140219019
2014-08-07

Solid state drive and data erasing method thereof

#16
20140043906
2014-02-13

Split block semiconductor memory device

#17
20100322015
2010-12-23

Split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing

#18
20100182847
2010-07-22

Nonvolatile memory system, semiconductor memory and writing method

#19
20100103745
2010-04-29

NAND flash memory with a programming voltage held dynamically in a NAND chain channel region

#20
20090003085
2009-01-01

Nonvolatile memory system, semiconductor memory, and writing method

#21
20080158997
2008-07-03

Erasing non-volatile memory using individual verification and additional erasing of subsets of memory cells

#22
20080158995
2008-07-03

Flash EEPROM System

#23
20080008009
2008-01-10

Nonvolatile memory system, semiconductor memory, and writing method

#24
20070237005
2007-10-11

Split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing

#25
20070133341
2007-06-14

Combination nonvolatile memory using unified technology with byte, page and block write and simultaneous read and write operations

#26
20070109859
2007-05-17

NAND flash memory with a programming voltage held dynamically in a NAND chain channel region

#27
20070091682
2007-04-26

Byte-Erasable Nonvolatile Memory Devices

#28
20070076480
2007-04-05

Combination nonvolatile memory using unified technology with byte, page and block write and simultaneous read and write operations

#29
20060268610
2006-11-30

Nonvolatile memory system, semiconductor memory, and writing method

#30
20060261399
2006-11-23

Split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing

#31
20060221709
2006-10-05

Systems for erasing non-volatile memory using individual verification and additional erasing of subsets of memory cells

#32
20060221708
2006-10-05

Erasing non-volatile memory utilizing changing word line conditions to compensate for slower erasing memory cells

#33
20060221705
2006-10-05

Soft programming non-volatile memory utilizing individual verification and additional soft programming of subsets of memory cells

#34
20060221703
2006-10-05

Systems for erasing non-volatile memory utilizing changing word line conditions to compensate for slower erasing memory cells

#35
20060221661
2006-10-05

Systems for soft programming non-volatile memory utilizing individual verification and additional soft programming of subsets of memory cells

#36
20060221660
2006-10-05

Erasing non-volatile memory using individual verification and additional erasing of subsets of memory cells

#37
20060215461
2006-09-28

Method for erasing an NROM cell

#38
20060212647
2006-09-21

Method of controlling a non-volatile memory device in which a data erase block is larger than a data write block

#39
20060203546
2006-09-14

Method of achieving wear leveling in flash memory using relative grades

#40
20060181934
2006-08-17

Methods for preventing fixed pattern programming

#41
20060158940
2006-07-20

Partial erase verify

#42
20060158938
2006-07-20

Method, circuit and systems for erasing one or more non-volatile memory cells

#43
20060140001
2006-06-29

NAND flash memory device capable of changing a block size

#44
20060120164
2006-06-08

Nonvolatile memory system, semiconductor memory, and writing method

#45
20060044919
2006-03-02

Non-volatile memory device and erasing method therefor

#46
20060018163
2006-01-26

Selective erase method for flash memory

#47
20060007737
2006-01-12

Nonvolatile semiconductor memory device capable of realizing optimized erasing operation in a memory array

#48
20050286336
2005-12-29

Flash EEprom system

#49
20050248993
2005-11-10

Non-volatile semiconductor memory device and multi-block erase method thereof

#50
20050185501
2005-08-25

Combination nonvolatile memory using unified technology with byte, page and block write and simultaneous read and write operations

#51
20050174855
2005-08-11

Method for erasing an NROM cell

#52
20050174850
2005-08-11

Method for erasing an NROM cell

#53
20050157550
2005-07-21

Nonvolatile memory system, semiconductor memory and writing method

#54
20050141298
2005-06-30

Combination nonvolatile memory using unified technology with byte, page and block write and simultaneous read and write operations

#55
20050095769
2005-05-05

Nonvolatile semiconductor memory device capable of realizing optimized erasing operation in a memory array

#56
20050094428
2005-05-05

Non-volatile semiconductor memory device, electronic card and electronic device

#57
20050030794
2005-02-10

Method for erasing an NROM cell