199967 ⎘
Indexing scheme relating to and subgroups, for features not directly covered by these groups; Reading and writing aspects of erasable programmable read-only memories Floating gate memory programmed by reverse programming, e.g. programmed with negative gate voltage and erased with positive gate voltage or programmed with high source or drain voltage and erased with high gate voltage
MEMORIES AND OPERATION METHODS THEREOF, MEMORY SYSTEMS AND ELECTRONIC DEVICES
#2Memory device and operating method thereof
#3Memory device and systems and methods for selecting memory cells in the memory device
#4Selecting memory cells using source lines
#5NOR flash memory cell with high storage density
#6NOR flash memory cell with high storage density
#7Nor flash memory cell with high storage density
#8Concurrent multi-state program verify for non-volatile memory