199721 ⎘
Electric analogue stores, e.g. for storing instantaneous values
Sub-classes:RECURSIVE ANALOG CONTENT ADDRESSABLE MEMORY DEVICE
#2RANDOMIZED DATA POLARITY INVERSION OF COMPUTATIONAL WEIGHT DATA IN A DIGITAL IN-MEMORY COMPUTATION PROCESSING SYSTEM
#3MEMORY DEVICE AND OPERATING METHOD THEREOF
#4MEMORY DEVICE AND METHOD OF OPERATING THE SAME
#5NEUROMORPHIC SEMICONDUCTOR DEVICE AND OPERATING METHOD THEREOF
#6Error compensation circuit for analog capacitor memory circuits
#7Memory unit with asymmetric group-modulated input scheme and current-to-voltage signal stacking scheme for non-volatile computing-in-memory applications and computing method thereof
#8Analog in-memory computing based inference accelerator
#9Nonvolatile memory device configured to adjust a read parameter based on degradation level
#10Magnetic domain wall type analog memory element, magnetic domain wall type analog memory, nonvolatile logic circuit, and magnetic neuro-element
#11Kernel sets normalization with capacitor charge sharing
#12Magnetic wall utilization-analog memory element and magnetic wall utilization analog memory
#13Nonvolatile memory device configured to adjust a read parameter based on a degradation level
#14Method and system for detecting an event and determine information about it (like its strength) using resistive state changes of a memristor
#15Competitive machine learning accuracy on neuromorphic arrays with non-ideal non-volatile memory devices
#16Detection of the authenticity of an electronic circuit or of a product containing such a circuit
#17Memristor crossbar arrays to activate processors
#18Magnetic wall utilization spin MOSFET and magnetic wall utilization analog memory
#19Detection of the authenticity of an electronic circuit or of a product containing such a circuit
#20Discrete-time analog filtering
#21Detection of the authenticity of an electronic circuit or of a product containing such a circuit
#22Sampling circuit and sampling method
#23Method of manufacturing an electronic device including a semiconductor memory having a metal electrode and a metal compound layer surrounding sidewall of the metal electrode
#24Delay circuit, electronic circuit using delay circuit and ultrasonic imaging device
#25Semiconductor device and operating method thereof
#26Electronic device comprising semiconductor memory using metal electrode and metal compound layer surrounding sidewall of the metal electrode
#27Applications for inter-word-line programming
#28Optimized threshold search in analog memory cells using separator pages of the same type as read pages
#29Storage and reproduction apparatus
#30High speed interface for multi-level memory
#31High speed interface for multi-level memory
#32Domain wall motion element and magnetic random access memory
#33Storage and reproduction apparatus
#34Voltage random access memory (VRAM)
#35High speed interface for multi-level memory
#36System and method for design entry and synthesis in programmable logic devices
#37Voltage random access memory (VRAM)
#38Chalcogenide glass constant current device, and its method of fabrication and operation
#39Storage and reproduction apparatus
#40Pixel circuits including boosting capacitors, methods of driving the same, and image sensors including the same
#41Track and hold circuit
#42Voltage random access memory (VRAM)
#43Flash array digitizer
#44Methods of operating and forming chalcogenide glass constant current devices
#45System and method for design entry and synthesis in programmable logic devices
#46Zero drift analog memory cell, array and method of operation
#47Programming analog memory elements in a neomorphic computing system
#48Analog delay lines and analog readout systems
#49Resistive processing unit weight reading via collection of differential current from first and second memory elements
#50Differential weight reading of an analog memory element in crosspoint array utilizing current subtraction transistors
#51Identifying and mitigating restricted sampling voltage ranges in analog memory cells