201407 ⎘
Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCrS diluted of III-V type, e.g. In1-x Mnx As
SINGLE-CHARGE TUNNELING DEVICE
#2Electronic devices based on current induced magnetization dynamics in single magnetic layers
#3Spin transistor and method of operating the same
#4Antiferromagnetic half-metallic semiconductor and manufacturing method therefor
#5Spin field effect transistor using half metal and method of manufacturing the same
#6Copper Doped Magnetic Semiconductors
#7SPINTRONIC DEVICES WITH CONSTRAINED SPINTRONIC DOPANT
#8Crystalline composition, wafer, and semi-conductor structure
#9Single-charge tunnelling device
#10Manganese Doped Magnetic Semiconductors
#11Spin transistor using spin-orbit coupling induced magnetic field
#12Device having a structural element with magnetic properties, and method
#13Ferromagnetic IV group based semiconductor, ferromagnetic III-V group based compound semiconductor, or ferromagnetic II-IV group based compound semiconductor, and method for adjusting their ferromagnetic characteristics
#14Integratable polarization rotator
#15Switching devices based on half-metals
#16Room temperature ferromagnetic semiconductor grown by plasma enhanced molecular beam epitaxy and ferromagnetic semiconductor based device