201540 ⎘
Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys having a L10 crystallographic structure, e.g. [Co,Fe][Pt,Pd] thin films
Spin-Orbit Torque Material and Device, and Use of Delafossite Oxide Thin Film
#2Perpendicularly Magnetized Ferromagnetic Layers Having an Oxide Interface Allowing for Improved Control of Oxidation
#3MAGNETIC BUBBLE MEMORY
#4MITIGATION OF CONTAMINATION OF ELECTROPLATED COBALT-PLATINUM FILMS ON SUBSTRATES
#5Seed layer for multilayer magnetic materials
#6Composite multi-stack seed layer to improve PMA for perpendicular magnetic pinning
#7Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM
#8Storage element
#9Semiconductor memory device and semiconductor memory manufacturing apparatus
#10SPIN VALVE WITH BIAS ALIGNMENT
#11Fe—Pt based magnetic material sintered compact
#12Storage element
#13Method of manufacturing electroplated cobalt-platinum films on substrates
#14Seed layer for multilayer magnetic materials
#15Perpendicularly magnetized ferromagnetic layers having an oxide interface allowing for improved control of oxidation
#16Storage element
#17Spin valve with bias alignment
#18Magnetostrictive stack and corresponding bit-cell
#19Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM
#20Underlayer for perpendicularly magnetized film, perpendicularly magnetized film structure, perpendicular MTJ element, and perpendicular magnetic recording medium using the same
#21Spin current magnetization rotational element, spin-orbit-torque magnetoresistance effect element, magnetic memory, and high-frequency magnetic element
#22Semiconductor memory device and semiconductor memory manufacturing apparatus
#23Texture inducing structure for alloy films and texture inducing method thereof
#24Storage element
#25Magnetic devices including magnetic junctions having tilted easy axes and enhanced damping programmable using spin orbit torque
#26Templating layers for perpendicularly magnetized heusler films
#27Spin orbit torque generating materials
#28Nano-porous alloys with strong permanent magnetism and preparation method therefor
#29MTJ structure having vertical magnetic anisotropy and magnetic element including the same
#30Perpendicularly magnetized ferromagnetic layers having an oxide interface allowing for improved control of oxidation
#31Magnetic Nanoparticles, Bulk Nanocomposite Magnets, and Production Thereof
#32Perpendicular magnetic layer and magnetic device including the same
#33MAGNETIC ELEMENT AND METHOD OF FABRICATION THEREOF
#34MAGNETIC RECORDING MEDIUM
#35Mitigation of contamination of electroplated cobalt-platinum films on substrates
#36Underlayer for perpendicularly magnetized film, perpendicularly magnetized film structure, perpendicular MTJ element, and perpendicular magnetic recording medium using the same
#37Seed layer for multilayer magnetic materials
#38Magnetic thin film and application device including magnetic thin film
#39Method of manufacturing tunnel magnetoresistive effect element and sputtering apparatus
#40Storage element, storage device, and magnetic head
#41Manufacturing method of magnetoresistive effect element
#42Storage element, storage apparatus, and magnetic head
#43Spin orbit and spin transfer torque-based spintronics devices
#44Spin transfer torque tunneling magnetoresistive device having a laminated free layer with perpendicular magnetic anisotropy
#45Magnetic memory
#46Free layer with out-of-plane anisotropy for magnetic device applications
#47Storage element, storage apparatus, and magnetic head
#48Fe-Pt based magnetic material sintered compact
#49Systems and methods for locally reducing oxides
#50Magnetic memory device
#51Cobalt (Co) and platinum (Pt)-based multilayer thin film having inverted structure and method for manufacturing same
#52Magnetoresistive element and magnetic memory using the same
#53Magnetic devices having perpendicular magnetic tunnel junction
#54Method of making a high thermal stability reference structure with out-of-plane anisotropy for magnetic device applications
#55High thermal stability reference structure with out-of-plane anisotropy for magnetic device applications
#56Apparatuses and methods including magnetic layer oxidation
#57Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM
#58Method for making an ordered magnetic alloy
#59Magnetic memory device
#60Method for manufacturing a magnetic tunnel junction device
#61Magnetic nanoparticles, bulk nanocomposite magnets, and production thereof
#62Magnetic memory
#63Magnetic memory devices including magnetic layers separated by tunnel barriers
#64Free layer with out-of-plane anisotropy for magnetic device applications
#65Seed layer for multilayer magnetic materials
#66Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM
#67Magnetic devices having perpendicular magnetic tunnel junction
#68Magnetic memory device
#69Free layer with high thermal stability for magnetic device applications by insertion of a boron dusting layer
#70Magnetoresistive element and magnetoresistive memory
#71High thermal stability free layer with high out-of-plane anisotropy for magnetic device applications
#72High thermal stability reference structure with out-of-plane aniotropy to magnetic device applications
#73Perpendicularly magnetized thin film structure and method for manufacturing the same
#74Very thin high coercivity film and process for making it
#75BIT PATTERNED MAGNETIC MEDIA FABRICATED BY TEMPLATED GROWTH FROM A PRINTED TOPOGRAPHIC PATTERN
#76Magnetoresistance Device
#77Magnetoresistive effect element, magnetic memory cell using same, and random access memory
#78Magnetoresistive element and magnetic memory using the same
#79Method and system for providing magnetic tunneling junctions usable in spin transfer torque magnetic memories
#80Magnetoresistive shield with stabilizing feature
#81Magnetoresistive shield with lateral sub-magnets
#82Magnetic recording device
#83Magnetoresistive element and magnetic memory
#84Current perpendicular to plane (CPP) magnetoresistive sensor having dual composition hard bias layer
#85MULTI-ANGLE HARD BIAS DEPOSITION FOR OPTIMAL HARD-BIAS DEPOSITION IN A MAGNETIC SENSOR
#86Magnetic switching cells and methods of making and operating same
#87Fabrication of a coercivity hard bias using FePt containing film
#88Magnetoresistive element and magnetic memory
#89Spin-transfer torque magnetic random access memory with multi-layered storage layer
#90Magnetoresistive element and magnetic random access memory
#91Method of producing a perpendicular magnetic disc
#92Magnetic field sensor with graphene sense layer and ferromagnetic biasing layer below the sense layer
#93Writable magnetic element
#94Magnetic tunnel junction device
#95Magnetic memory devices
#96Magnetic memory device
#97METHOD FOR ORDERING A DISORDERED ALLOY AND MAGNETIC MATERIAL MADE THEREBY
#98Method and system for providing magnetic tunneling junctions usable in spin transfer torque magnetic memories
#99Optimized free layer for spin torque magnetic random access memory
#100Method of producing self-assembled cubic FePt nanoparticles and apparatus using same
#101Magnetic memory devices including magnetic layers separated by tunnel barriers
#102Method for ordering a disordered alloy and method for making a perpendicular magnetic recording medium
#103Magnetic tunnel junction device and method for manufacturing the same
#104Layered structure having FePt system magnetic layer and magnetoresistive effect element using the same
#105Hybrid grain boundary additives
#106HIGH DENSITY MAGNETIC RECORDING FILM AND METHOD FOR MANUFACTURING THE SAME BY USING RAPID THERMAL ANNEALING TREATMENT
#107Method of producing self-assembled cubic FePt nanoparticles and apparatus using same
#108Magnetoresistive effect device and magnetic memory
#109MAGNETIC NANOPARTICLES, BULK NANOCOMPOSITE MAGNETS, AND PRODUCTION THEREOF
#110Multilayer hard magnet and data storage device read/write head incorporating the same
#111Hard magnet with cap and seed layers and data storage device read/write head incorporating the same
#112Method for producing an element, including a multiplicity of nanocylinders on a substrate
#113MAGNETORESISTIVE ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY
#114Magnetoresistive effect element and magnetic random access memory
#115Magnetoresistive element and magnetic memory
#116Magnetoresistive element and magnetic memory
#117Magnetic film and method of manufacturing magnetic film
#118Method of manufacturing magnetic layer, patterned magnetic recording media including magnetic layer formed using the method, and method of manufacturing the same
#119MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
#120High speed low power annular magnetic devices based on current induced spin-momentum transfer
#121Plating solution, process for producing a structure with the plating solution, and apparatus employing the plating solution
#122Exchange coupling film and magnetoresistive element using the same
#123Process for manufacturing magnetic material, magnetic material and high density magnetic recording medium
#124Ferromagnetic nanoparticles, material coated with dispersion of ferromagnetic nanoparticles, and magnetic recording medium using the material
#125Fept magnetic thin film having perpendicular magnetic anisotropy and method for preparation thereof
#126CPP magneto-resistive element, method of manufacturing CPP magneto-resistive element, magnetic head, and magnetic memory apparatus
#127Magnetic recording medium and hard disk drive using the same, and manufacturing method thereof
#128Magnetoresistive sensor with antiferromagnetic exchange-coupled structure formed by use of chemical-ordering enhancement layer
#129Exchange coupling film and magnetoresistive element using the same
#130Core-shell magnetic nanoparticles and nanocomposite materials formed therefrom
#131Magnetic recording medium and method for manufacturing the same
#132Magnetic recording medium and manufacturing method thereof
#133High speed low power magnetic devices based on current induced spin-momentum transfer
#134Exchange coupling film and magnetoresistive element using the same
#135Method for fabricating L10 phase alloy film
#136Exchange coupling film and magnetoresistive element using the same
#137Method of producing magnetic particles and reaction method using microreactor and microreactor
#138Magnetic film forming method, magnetic pattern forming method and magnetic recording medium manufacturing method
#139Magnetic film forming method, magnetic pattern forming method and magnetic recording medium manufacturing method
#140Magnetic recording medium, and method for producing the same
#141Magnetic film forming method, magnetic pattern forming method and magnetic recording medium manufacturing method
#142Magnetic film forming method, magnetic pattern forming method and magnetic recording medium manufacturing method
#143Magnetic film forming method, magnetic pattern forming method and magnetic recording medium manufacturing method
#144Exchange coupling film and magnetoresistive element using the same
#145Nanoparticle, method of producing nanoparticle and magnetic recording medium
#146Magnetic particle coated material containing magnetic particles having CuAu type or Cu3Au type ferromagnetic ordered alloy phase, and method for producing the same
#147Magnetic alloy, magnetic recording medium, and magnetic recording and reproducing apparatus
#148Polycrystalline structure film and method of making the same
#149Magnetic particles and method of producing the same and magnetic recording medium
#150Polycrystalline structure of ordered alloy and method of making the same
#151High speed low power magnetic devices based on current induced spin-momentum transfer