201568 ⎘
Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers characterised by the composition of the intermediate layers, e.g. seed, buffer, template, diffusion preventing, cap layers
Buffer Layers And Interlayers That Promote BiSbx (012) Alloy Orientation For SOT And MRAM Devices
#2Multilayer Structure for Reducing Film Roughness in Magnetic Devices
#3THIN-FILM CRYSTALLINE STRUCTURE WITH SURFACES HAVING SELECTED PLANE ORIENTATIONS
#4Buffer Layers And Interlayers That Promote BiSbx (012) Alloy Orientation For SOT And MRAM Devices
#5Electromagnetic wave attenuator, electronic device, film formation apparatus, and film formation method
#6MULTILAYER MAGNETIC SHEET
#7MAGNETIC THIN FILM LAMINATED STRUCTURE AND MICRO-INDUCTIVE DEVICE THEREOF
#8Magnetically anisotropic binder-free films containing discrete hexaferrite nanoplatelets
#9MITIGATION OF CONTAMINATION OF ELECTROPLATED COBALT-PLATINUM FILMS ON SUBSTRATES
#10Ferrimagnetic Heusler compounds with high spin polarization
#11Insertion layers for perpendicularly magnetized Heusler layers with reduced magnetic damping
#12IDEAL DIAMAGNETIC RESPONSE OF A GRAPHENE-n-HEPTANE-PERMALLOY SYSTEM
#13Tunable templating layers for perpendicularly magnetized Heusler films
#14Composition and method of making a monolithic heterostructure of multiferroic thin films
#15Thin-film crystalline structure with surfaces having selected plane orientations
#16Seed layer for multilayer magnetic materials
#17Seed layer for spin torque oscillator in microwave assisted magnetic recording device
#18Composite multi-stack seed layer to improve PMA for perpendicular magnetic pinning
#19Electromagnetic wave attenuator, electronic device, film formation apparatus, and film formation method
#20Stacked structure, magnetoresistive effect element, magnetic head, sensor, high frequency filter, and oscillator
#21Magnetic element, magnetic memory device, and magnetic sensor
#22Layer stack for magnetic tunnel junction device
#23Superlattice material, and preparation method and application thereof
#24Large moments in BCC FECOMNand other alloy thin films
#25Exchange-coupling film and magnetoresistive element and magnetic detector using the same
#26Electromagnetic wave attenuator and electronic device
#27Method of manufacturing electroplated cobalt-platinum films on substrates
#28Method of and apparatus for measuring magnitude of magnetization of perpendicular thin film
#29Storage device, storage apparatus, magnetic head, and electronic apparatus
#30Fully compensated synthetic ferromagnet for spintronics applications
#31Seed layer for multilayer magnetic materials
#32Magnetic sensors with a mixed oxide passivation layer
#33Magnetoresistive device comprising chromium
#34Magnetic core for integrated magnetic devices
#35Magnetic field sensor using in situ solid source graphene and graphene induced anti-ferromagnetic coupling and spin filtering
#36Magnetic thin film laminated structure deposition method
#37Magneto-resistance element in which I-III-VI2 compound semiconductor is used, method for manufacturing said magneto-resistance element, and magnetic storage device and spin transistor in which said magneto-resistance element is used
#38Fully compensated synthetic ferromagnet for spintronics applications
#39Underlayer for perpendicularly magnetized film, perpendicularly magnetized film structure, perpendicular MTJ element, and perpendicular magnetic recording medium using the same
#40Magnetoresistance effect element
#41Giant perpendicular magnetic anisotropy in Fe/GaN thin films for data storage and memory devices
#42Multilayer Structure for Reducing Film Roughness in Magnetic Devices
#43Beta tungsten thin films with giant spin Hall effect for use in compositions and structures with perpendicular magnetic anisotropy
#44Magnetoresistance effect element, magnetic sensor and magnetic memory
#45Magnetoresistive stacks and methods therefor
#46Stacked structure, magnetoresistive effect element, magnetic head, sensor, high frequency filter, and oscillator
#47Multilayer Structure for Reducing Film Roughness in Magnetic Devices
#48Magnetic device
#49Method to form magnetic core for integrated magnetic devices
#50Texture inducing structure for alloy films and texture inducing method thereof
#51PSTTM device with bottom electrode interface material
#52Magnetic sheet and electronic device
#53Monocrystalline magneto resistance element, method for producing the same and method for using same
#54METHOD OF MAKING A MULTI-LAYER MAGNETO-DIELECTRIC MATERIAL
#55Templating layers for perpendicularly magnetized heusler films
#56Magnetoresistive device comprising chromium
#57Multi-layer magneto-dielectric material
#58Spin orbit torque generating materials
#59Spin logic device with high spin injection efficiency from a matched spin transfer layer
#60Magnetoresistance effect element
#61Electricity generating device, electric source and sensor
#62Thin film magnet and method for manufacturing thin film magnet
#63Storage device, storage apparatus, magnetic head, and electronic apparatus
#64Nanosecond-timescale low-error switching of 3-terminal magnetic tunnel junction circuits through dynamic in-plane-field assisted spin-hall effect
#65Fully compensated synthetic ferromagnet for spintronics applications
#66Permanent magnet comprising a stack of N patterns
#67Perpendicular magnetic tunnel junction devices with high thermal stability
#68Soft magnetic laminated core and method of producing a laminated core for a stator and/or rotor of an electric machine
#69Beta tungsten thin films with giant spin hall effect for use in compositions and structures with perpendicular magnetic anisotropy
#70Perpendicular magnetic layer and magnetic device including the same
#71Electrolessly formed high resistivity magnetic materials
#72Permanent magnet comprising a stack of N patterns
#73Multilayer structure for reducing film roughness in magnetic devices
#74Monocrystalline magneto resistance element, method for producing the same and method for using same
#75Mitigation of contamination of electroplated cobalt-platinum films on substrates
#76Magnetoresistive element and magnetic memory
#77Multilayer structure for reducing film roughness in magnetic devices
#78Underlayer for perpendicularly magnetized film, perpendicularly magnetized film structure, perpendicular MTJ element, and perpendicular magnetic recording medium using the same
#79Seed layer for multilayer magnetic materials
#80Side shielded magnetoresistive (MR) read head with perpendicular magnetic free layer
#81Magnetoresistive element and magnetic memory
#82Magnetoresistive element
#83Magnetoresistive element
#84Magnetic structures, methods of forming the same and memory devices including a magnetic structure
#85Semiconductor device having pinned layer with enhanced thermal endurance
#86Magneto-resistive effect device, magnetic head gimbal assembly, magnetic recording/reproduction device, strain sensor, pressure sensor, blood pressure sensor, and structural health monitoring sensor
#87Perpendicularly magnetized ultrathin film exhibiting high perpendicular magnetic anisotropy, method for manufacturing same, and application
#88Side shielded magnetoresistive (MR) read head with perpendicular magnetic free layer
#89Method for making an ordered magnetic alloy
#90Fully compensated synthetic antiferromagnet for spintronics applications
#91Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications
#92Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications
#93Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications
#94Magnetoresistive element using specific underlayer material
#95ARTICLES INCLUDING INTERMEDIATE LAYER AND METHODS OF FORMING
#96Seed layer for multilayer magnetic materials
#97SPIN TRANSFER TORQUE MEMORY (STTM) DEVICE WITH TOPOGRAPHICALLY SMOOTH ELECTRODE AND METHOD TO FORM SAME
#98Co/X and CoX multilayers with improved out-of-plane anisotropy for magnetic device applications
#99Magnetic sensor seed layer with magnetic and nonmagnetic layers
#100Magnetic memory and method of fabricating the same
#101Memory cell with phonon-blocking insulating layer
#102MAGNETIC STRUCTURES, METHODS OF FORMING THE SAME AND MEMORY DEVICES INCLUDING A MAGNETIC STRUCTURE
#103Varyinig morphology in magnetic sensor sub-layers
#104Seed layer and free magnetic layer for perpindicular anisotropy in a spin-torque magnetic random access memory
#105Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications
#106Magneto-resistive effect device, magnetic head gimbal assembly, magnetic recording/reproduction device, strain sensor, pressure sensor, blood pressure sensor, and structural health monitoring sensor
#107Fabrication of a coercivity hard bias using FePt containing film
#108Memory cell with phonon-blocking insulating layer
#109Magnetoresistive element including a nitrogen-containing buffer layer
#110STRUCTURE AND METHOD FOR FABRICATING A MAGNETIC THIN FILM MEMORY HAVING A HIGH FIELD ANISOTROPY
#111Magnetic sensor and magnetic memory
#112Seed layer and free magnetic layer for perpendicular anisotropy in a spin-torque magnetic random access memory
#113Side shielded magnetoresistive (MR) read head with perpendicular magnetic free layer
#114Magnetoresistive element utilizing a peltier effect junction of Au and CuNi to cool the element
#115SPIN TRANSFER MAGNETIC ELEMENT WITH FREE LAYERS HAVING HIGH PERPENDICULAR ANISOTROPY AND IN-PLANE EQUILIBRIUM MAGNETIZATION
#116Magnetoresistance sensors pinned by an etch induced magnetic anisotropy
#117MTJ incorporating CoFe/Ni multilayer film with perpendicular magnetic anisotropy for MRAM application
#118Magnetoresistive sensor employing nitrogenated Cu/Ag under-layers with (100) textured growth as templates for CoFe, CoFeX, and Co(MnFe)X alloys
#119SPIN TRANSFER MAGNETIC ELEMENT WITH FREE LAYERS HAVING HIGH PERPENDICULAR ANISOTROPY AND IN-PLANE EQUILIBRIUM MAGNETIZATION
#120Magnetoresistance device including layered ferromagnetic structure, and method of manufacturing the same
#121MAGNETIC TUNNEL JUNCTION STACK
#122System, method and apparatus for onset magnetic oxide layer for high performance perpendicular magnetic recording media
#123Tunneling magnetic sensing element including MGO film as insulating barrier layer
#124Underlayer for high performance magnetic tunneling junction MRAM
#125Underlayer for high performance magnetic tunneling junction MRAM
#126Capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same
#127Seed layer for TMR or CPP-GMR sensor
#128TMR device with Hf based seed layer
#129Exchange coupled film including hafnium and amorphous layers usable in a magnetoresistive element in a thin-film magnetic head
#130Magneto-resistive effect device of CPP type having shield layers coupled with ferromagnetic layers
#131Magnetoresistance effect element having resistance adjusting layer and thin-film insertion layer
#132Perpendicular magnetic recording medium, and perpendicular magnetic recording and reproducing apparatus
#133MAGNETO-RESISTANCE ELEMENT, MANUFACTURING METHOD THEREFOR, AND MAGNETIC HEAD
#134Magnetic sensing element and method for manufacturing the same
#135Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plan equilibrium magnetization
#136Methods of fabricating magnetoresistance sensors pinned by an etch induced magnetic anisotropy
#137Method for Manufacturing a Magnetoresistive Multilayer Film
#138TMR device with Hf based seed layer
#139Current-perpendicular-to-plane sensor epitaxially grown on a bottom shield
#140Magnetic multilayer device, method for producing such a device, magnetic field sensor, magnetic memory and logic gate using such a device
#141MAGNETORESISTIVE ELEMENT
#142Method and apparatus for depositing a magnetoresistive multilayer film
#143Perpendicular magnetic recording media, production process thereof, and perpendicular magnetic recording and reproducing apparatus
#144Exchange-coupled film, method for making exchange-coupled film, and magnetic sensing element including exchange-coupled film
#145EXCHANGE-COUPLED FILM, METHOD FOR MAKING EXCHANGE-COUPLED FILM, AND MAGNETIC SENSING ELEMENT INCLUDING EXCHANGE-COUPLED FILM
#146Thin-film magnetic device with strong spin polarization perpendicular to the plane of the layers, magnetic tunnel junction and spin valve using such a device
#147Capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same
#148High coercivity hard magnetic seedlayer
#149Seedlayer for high hard bias layer coercivity
#150Method and apparatus for depositing a magnetoresistive multilayer film
#151Control and manipulation of pinned layer remanence of a platinum manganese based bottom spin valve
#152Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements
#153Magnetoresistive memory cell and process for producing the same
#154Adiabatic rotational switching memory element including a ferromagnetic decoupling layer
#155Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in hard magnetic bias layers
#156Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a self biased free layer
#157Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic pinning layer
#158Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic in-stack bias layer
#159Magnetoresistive element having current-perpendicular-to-plane structure, magnetic head, and magnetic memory apparatus thereof
#160Magnetoresistive element and method of manufacturing the same
#161Material and uses thereof
#162Magnetoresistance device including layered ferromagnetic structure, and method of manufacturing the same
#163Ta based bilayer seed for IrMn CPP spin valve
#164Magnetic sensing element with improved magnetic sensitivity stability and method for producing the same
#165Stitching of AFM and channeling layers for in-stack biasing CPP
#166Magnetoresistive element, thin-film magnetic head, head gimbal assembly, head arm assembly and magnetic disk drive
#167Magnetic film for a magnetic device, magnetic head for a hard disk drive, and solid-state device
#168Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
#169Magnetic film for a magnetic device, magnetic head for a hard disk drive, and solid-state device
#170Magnetoresistance effect element, magnetic head and magnetic reproducing apparatus
#171GMR device having an improved free layer
#172Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements
#173Buffer (seed) layer in a high-performance magnetic tunneling junction MRAM
#174Underlayer for high performance magnetic tunneling junction MRAM
#175Magnetoresistance effect film and magnetoresistance effect head
#176Method of incorporating magnetic materials in a semiconductor manufacturing process
#177Method of forming a magnetic tunneling junction (MTJ) MRAM device and a tunneling magnetoresistive (TMR) read head
#178Current-perpendicular-to-plane magnetoresistive sensor with free layer stabilized by in-stack orthogonal magnetic coupling to an antiparallel pinned biasing layer
#179Current-perpendicular-to-plane magnetoresistive sensor with free layer stabilized by in-stack orthogonal magnetic coupling
#180Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
#181Magnetoresistance effect element, magnetic head, and magnetic storage system using a giant magnetoresistance effect element
#182Seed layer structure for improved crystallographic orientation of a hard magnetic material
#183Method for manufacturing a magnetoresistive multilayer film
#184High saturation flux density soft magnetic material
#185Thin film magnetic head including NiPRe alloy gap layer
#186Magnetic thin film media with a pre-seed layer of CrTi
#187Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system
#188Exchange-coupled film, method for making exchange-coupled film, and magnetic sensing element including exchange-coupled film
#189Magnetic microcapsule, preparation method thereof, and magnetic film
#190Magnetically anisotropic binder-free films containing discrete hexaferrite nanoplatelets
#191Thin-film crystalline structure with surfaces having selected plane orientations
#192Adjustable stabilizer/polarizer method for MRAM with enhanced stability and efficient switching
#193MnN and Heusler layers in magnetic tunnel junctions