H01F41/325 - CPC Classification Index

ClassID:

201864 ⎘

H01F41/325 - CPC Classification

Classification description:

Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film applying a noble metal capping on a spin-exchange-coupled multilayer, e.g. spin filter deposition

Recent Application in this class:

20220271219

2022-08-25

STORAGE ELEMENT AND MEMORY

20210083177

2021-03-18

Storage element and memory

20200052195

2020-02-13

Storage element and memory

20190348208

2019-11-14

Magnetoresistive device comprising chromium

20190207095

2019-07-04

Perpendicular magnetic anisotropy interface tunnel junction devices and methods of manufacture

20190044059

2019-02-07

Storage element and memory

20180190419

2018-07-05

Magnetoresistive device comprising chromium

20180033954

2018-02-01

Nanosecond-timescale low-error switching of 3-terminal magnetic tunnel junction circuits through dynamic in-plane-field assisted spin-hall effect

20170358738

2017-12-14

Storage element and memory

#10

20170033742

2017-02-02

Spin oscillator device

#11

20160172581

2016-06-16

Spin torque majority gate device

#12

20160035971

2016-02-04

Storage element and memory

#13

20150325782

2015-11-12

Multilayer magnetic storage element and storage device

#14

20150194596

2015-07-09

Perpendicular MTJ stacks with magnetic anisotrophy enhancing layer and crystallization barrier layer

#15

20140362477

2014-12-11

Magneto-resistance effect device with mixed oxide function layer

#16

20140292466

2014-10-02

Electronic component and manufacturing method thereof

#17

20140284735

2014-09-25

Magnetoresistance effect element with shift canceling layer having pattern area greater than that of storage layer

#18

20140264674

2014-09-18

Storage element and memory

#19

20140206104

2014-07-24

Method of fabricating a magnetic tunnel junction (MTJ) device with reduced switching current

#20

20140084398

2014-03-27

Perpendicular MTJ stacks with magnetic anisotropy enhancing layer and crystallization barrier layer

#21

20140061827

2014-03-06

Metal Protection Layer over SiN Encapsulation for Spin-Torque MRAM Device Applications

#22

20140056061

2014-02-27

Method and system for providing dual magnetic tunneling junctions using spin-orbit interaction-based switching and memories utilizing the dual magnetic tunneling junctions

#23

20140021569

2014-01-23

Spin-filter and detector comprising the same

#24

20130100724

2013-04-25

High density molecular memory storage with read and write capabilities

#25

20130065086

2013-03-14

Reproducing head with spin-torque oscillator, and magnetic recording and reproducing apparatus

#26

20130062714

2013-03-14

Strain induced reduction of switching current in spin-transfer torque switching devices

#27

20120326253

2012-12-27

Method and system for providing magnetic tunneling junctions usable in spin transfer torque magnetic memories

#28

20120287696

2012-11-15

Storage element and storage device

#29

20120229936

2012-09-13

MAGNETO-RESISTANCE EFFECT DEVICE, AND MAGNETIC RECORDER

#30

20120206837

2012-08-16

Magnetoresistive element, magnetic head assembly, and magnetic recording/reproducing apparatus

#31

20120155156

2012-06-21

Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements

#32

20120050920

2012-03-01

Method of manufacturing magnetoresistive element

#33

20120009440

2012-01-12

Magnetoresistance effect element with a layer containing an oxide as a principal component and containing a magnetic transition metal element which does not bond to oxygen

#34

20110261478

2011-10-27

MAGNETORESISTIVE ELEMENT AND MAGNETIC RECORDING APPARATUS

#35

20110170341

2011-07-14

Method and system for providing magnetic tunneling junctions usable in spin transfer torque magnetic memories

#36

20110032644

2011-02-10

Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements

#37

20100315869

2010-12-16

Spin torque transfer MRAM design with low switching current

#38

20100136713

2010-06-03

Process for manufacturing a magnetic tunnel junction (MTJ) device

#39

20090225477

2009-09-10

Tunnel barrier sensor with multilayer structure

#40

20090141408

2009-06-04

Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory

#41

20090109581

2009-04-30

Magnetoresistance effect element with a layer containing an oxide as a principal component and containing a magnetic transition metal element which does not bond to oxygen

#42

20090057793

2009-03-05

Spin transistor and method of manufacturing same

#43

20090039345

2009-02-12

Tunnel Junction Barrier Layer Comprising a Diluted Semiconductor with Spin Sensitivity

#44

20080140922

2008-06-12

STORAGE ELEMENT AND MEMORY

#45

20080088987

2008-04-17

Exchange-coupled film, method for making exchange-coupled film, and magnetic sensing element including exchange-coupled film

#46

20080088986

2008-04-17

Hafnium doped cap and free layer for MRAM device

#47

20080068767

2008-03-20

EXCHANGE-COUPLED FILM, METHOD FOR MAKING EXCHANGE-COUPLED FILM, AND MAGNETIC SENSING ELEMENT INCLUDING EXCHANGE-COUPLED FILM

#48

20080068764

2008-03-20

MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC REPRODUCING APPARATUS, AND MAGNETIC MEMORY

#49

20080062577

2008-03-13

Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory

#50

20080026253

2008-01-31

CPP TYPE GIANT MAGNETO-RESISTANCE ELEMENT AND MAGNETIC SENSOR

#51

20070211393

2007-09-13

Method and apparatus for using a specular scattering layer in a free layer of a magnetic sensor while stabilizing the free layer by direct coupling with an antiferromagnetic layer

#52