Patents-Review.com
ClassID:

204843 ⎘

H01J21/105 - CPC Classification

Classification description:

Vacuum tubes; Tubes with a single discharge path having electrostatic control means only with one or more immovable internal control electrodes, e.g. triode, pentode, octode with microengineered cathode and control electrodes, e.g. Spindt-type

Recent Application in this class:
#1
20210273116
2021-09-02

Gate all around vacuum channel transistor

 #2
20210166908
2021-06-03

Vacuum channel transistor structures with sub-10 nanometer nanogaps and layered metal electrodes

 #3
20210159039
2021-05-27

Device for controlling electron flow and method for manufacturing said device

 #4
20200402757
2020-12-24

Image intensifier with thin layer transmission layer support structures

 #5
20200388460
2020-12-10

Device for controlling electron flow and method for manufacturing said device

 #6
20200350136
2020-11-05

Vertical vacuum channel transistor

 #7
20200279954
2020-09-03

Gate all around vacuum channel transistor

 #8
20200098534
2020-03-26

Vacuum channel transistor structures with sub-10 nanometer nanogaps and layered metal electrodes

 #9
20200020501
2020-01-16

Chip Scale Encapsulated Vacuum Field Emission Device Integrated Circuit and Method of Fabrication Therefor

 #10
20190393012
2019-12-26

Planar gate-insulated vacuum channel transistor

 #11
20190378675
2019-12-12

Vertical vacuum channel transistor with minimized air gap between tip and gate

 #12
20190304733
2019-10-03

Fold over emitter and collector field emission transistor

 #13
20190252146
2019-08-15

Planar field emission transistor

 #14
20180294131
2018-10-11

Two-dimensional graphene cold cathode, anode, and grid

 #15
20180277329
2018-09-27

Nanoscale field-emission device and method of fabrication

 #16
20180108508
2018-04-19

Fold over emitter and collector field emission transistor

 #17
20180097118
2018-04-05

Gate all around vacuum channel transistor

 #18
20180012723
2018-01-11

Vacuum electron tube with planar cathode based on nanotubes or nanowires

 #19
20170250359
2017-08-31

Carbon nanotube vacuum transistors

 #20
20170062743
2017-03-02

Carbon nanotube vacuum transistors

 #21
20170032921
2017-02-02

Integrated vacuum microelectronic structure and manufacturing method thereof

 #22
20160372295
2016-12-22

Emitter with deep structuring on front and rear surfaces

 #23
20160307723
2016-10-20

Fold over emitter and collector field emission transistor

 #24
20160148774
2016-05-26

Field-emission device with improved beams-convergence

 #25
20160141428
2016-05-19

Process for manufacturing a semiconductor device comprising an empty trench structure and semiconductor device manufactured thereby

 #26
20150022076
2015-01-22

Electron-emitting cold cathode device

 #27
20140353576
2014-12-04

Integrated vacuum microelectronic device and fabrication method thereof

 #28
20110031867
2011-02-10

High frequency triode-type field emission device and process for manufacturing the same

 #29
20080001513
2008-01-03

Field emission microelectronic device

 #30
20070293115
2007-12-20

Process for making an on-chip vacuum tube device

 #31
20060125368
2006-06-15

Solid state vacuum devices

 #32
20050285502
2005-12-29

Electric field emission device having a triode structure fabricated by using an anodic oxidation process and method for fabricating same

 #33
20050247929
2005-11-10

Nanotube-based vacuum devices

 #34
20050161668
2005-07-28

Nanotube-based vacuum devices

 #35
16005204
2019-07-09

Vertical vacuum channel transistor with minimized air gap between tip and gate

 #36
14684762
2016-08-30

Fold over emitter and collector field emission transistor