216215 ⎘
Functional characteristics; Semiconductor lasers comprising special layers The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
Nitride-composite semiconductor laser element, its manufacturing method, and semiconductor optical device
#302Intersubband semiconductor lasers with enhanced subband depopulation rate
#303Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system
#304Semiconductor light emitting device
#305Structure and manufacturing method for single-wavelength and multi-wavelength distributed feedback lasers
#306Semiconductor laser device
#307Semiconductor device having superlattice semiconductor layer and method of manufacturing the same
#308Nitride semiconductor laser device
#309Semiconductor light emitting element and method for fabricating the same
#310Ultraviolet laser diode device
#311Intermediate ultraviolet laser diode device
#312Gallium and nitrogen containing laser device configured on a patterned substrate
#313Gallium nitride containing laser device configured on a patterned substrate
#314Electrically isolating adjacent vertical-emitting devices