215795 ⎘
Semiconductor lasers; Structural details or components not essential to laser action; Substrates, e.g. growth, shape, material, removal or bonding; Substrates made of ternary or quaternary compounds
Sub-classes:RELAXED WURTZITE INGAN LAYERS
#2RELAXED WURTZITE INGAN LAYERS
#3Quantum cascade laser and method for manufacturing same
#4Nitride light emitter
#5RAMO4 monocrystalline substrate
#6Method for preparing organic polymer thin film laser
#7Integration of bonded optoelectronics, photonics waveguide and VLSI SOI
#8Integration of bonded optoelectronics, photonics waveguide and VLSI SOI
#9Integration of bonded optoelectronics, photonics waveguide and VLSI SOI
#10Integration of bonded optoelectronics, photonics waveguide and VLSI SOI
#11III-nitride light emitting device with a region including only ternary, quaternary, and/or quinary III-nitride layers
#12Application-oriented nitride substrates for epitaxial growth of electronic and optoelectronic device structures
#13GaN-BASED COMPOUND SEMICONDUCTOR DEVICE
#14ZnO-based semiconductor device
#15Nitride semiconductor device and method for manufacturing the same
#16Nitride semiconductor light-emitting device
#17III-V group nitride system semiconductor substrate
#18Silicon carbon germanium (SiCGe) substrate for a group III nitride-based device
#19GaN-based compound semiconductor device
#20Nitride semiconductor light-emitting device and method for producing same
#21Extended wavelength strained layer lasers having nitrogen disposed therein
#22III-V group nitride system semiconductor substrate