216018 ⎘
Semiconductor lasers; Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers; Confining in the direction perpendicular to the layer structure by using electron barrier layers MQW barrier reflection layers
Vertical-cavity surface-emitting laser fabrication on large wafer
#2Quantum Well Structure for Polarized Semiconductors
#3Vertical cavity light emitting element
#4Optical modulator having reflection layers
#5Chip-scale power scalable ultraviolet optical source
#6PHOTONIC DEVICES WITH EMBEDDED HOLE INJECTION LAYER TO IMPROVE EFFICIENCY AND DROOP RATE
#7Multiquantum well structures for suppression of electron leakage and reduction of threshold-current density in quantum cascade lasers
#8Photonic Devices with Embedded Hole Injection Layer to Improve Efficiency and Droop Rate
#9Method of fabricating optical devices using laser treatment
#10HOLE BLOCKING LAYER FOR THE PREVENTION OF HOLE OVERFLOW AND NON-RADIATIVE RECOMBINATION AT DEFECTS OUTSIDE THE ACTIVE REGION
#11Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method
#12RED SURFACE EMITTING LASER ELEMENT, IMAGE FORMING DEVICE, AND IMAGE DISPLAY APPARATUS
#13Gallium nitride based semiconductor laser device
#14Laser diode with high indium active layer and lattice matched cladding layer
#15Red surface emitting laser element, image forming device, and image display apparatus
#16Red surface emitting laser element, image forming device, and image display apparatus
#17Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method
#18Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method
#19III-V group GaN-based compound semiconductor device