216030 ⎘
Semiconductor lasers; Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers; Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by radiation treatment or annealing
III-NITRIDE-BASED DEVICES GROWN ON A THIN TEMPLATE ON THERMALLY-DECOMPOSED MATERIAL
#2SEMICONDUCTOR LASER DIODE AND METHOD FOR PRODUCING A SEMICONDUCTOR LASER DIODE
#3Method for producing a semiconductor chip and semiconductor chip
#4Semiconductor modification process for conductive and modified electrical regions and related structures
#5Vertical cavity surface emitting laser and method for manufacturing same
#6Light emitting device with transparent conductive group-III nitride layer
#7Method of manufacturing light emitting device
#8Method for producing a semiconductor chip and semiconductor chip
#9Method for producing light-emitting device
#10Semiconductor modification process for conductive and modified electrical regions and related structures
#11Semiconductor light device and manufacturing method for the same
#12Semiconductor optical element, semiconductor laser element, and method for manufacturing semiconductor optical element and semiconductor laser element, and method for manufacturing semiconductor laser module and semiconductor element
#13Semiconductor light device and manufacturing method for the same
#14Method for fabricating semiconductor laser
#15Laser Diode Assembly and Method for Producing a Laser Diode Assembly
#16Semiconductor laser element and manufacturing method thereof
#17Manufacturing method of semiconductor device, semiconductor device, communication apparatus, and semiconductor laser
#18PROCESS FOR PRODUCING NITRIDE SEMICONDUCTOR LASER, AND NITRIDE SEMICONDUCTOR LASER
#19SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR FABRICATING THE SAME
#20Nitride semiconductor device
#21METHOD OF PRODUCING N-TYPE GROUP-13 NITRIDE SEMICONDUCTOR, METHOD OF FORMING CURRENT CONFINEMENT LAYER, METHOD OF PRODUCING SURFACE EMITTING LASER, METHOD OF CHANGING RESISTANCE OF NITRIDE SEMICONDUCTOR AND METHOD OF PRODUCING SEMICONDUCTOR LASER
#22SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR FABRICATING THE SAME
#23Multiple anneal induced disordering
#24LIGHT EMITTING DEVICES HAVING CURRENT BLOCKING STRUCTURES AND METHODS OF FABRICATING LIGHT EMITTING DEVICES HAVING CURRENT BLOCKING STRUCTURES
#25Laterally oxidized vertical cavity surface emitting lasers
#26Light emitting devices having current blocking structures and methods of fabricating light emitting devices having current blocking structures
#27Method and structure for eliminating polarization instability in laterally—oxidized VCSELs
#28Semiconductor light emitting element and method for fabricating the same
#29Laterally tailoring current injection for laser diodes