Patents-Review.com
ClassID:

216045 ⎘

H01S5/221 - CPC Classification

Classification description:

Semiconductor lasers; Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials containing aluminium

Recent Application in this class:
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NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF, AND MANUFACTURING METHOD OF NITRIDE-BASED SEMICONDUCTOR CRYSTAL

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METHOD OF FABRICATING NON-POLAR AND SEMI-POLAR DEVICES USING EPITAXIAL LATERAL OVERGROWTH

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Electro-optical device with lateral electron blocking layer

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20190074662
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Method for making a semiconductor laser diode, and laser diode

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20190013649
2019-01-10

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2018-10-04

VCSELs with improved optical and electrical confinement

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20180287334
2018-10-04

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2018-03-08

Light-emitting element and method for manufacturing the same

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2017-12-28

Quantum cascade laser with current blocking layers

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20170012409
2017-01-12

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2016-03-03

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20160036197
2016-02-04

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20150349494
2015-12-03

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2015-11-26

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Light-emitting element and method for manufacturing the same

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20150311677
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20150194788
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Ridge laser

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2015-03-26

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20090201962
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Group III nitride compound semiconductor light-emitting device

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Light-emitting element and method for manufacturing the same

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OPTICAL DEVICE AND METHOD FOR MANUFACTURING THE SAME

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20080165818
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2007-08-23

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20070171949
2007-07-26

Laser diode and semiconductor light-emitting device producing visible-wavelength radiation

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Light-emitting photonic device

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SEMICONDUCTOR LASER DEVICE AND OPTICAL PICKUP APPARATUS USING THE SAME

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Semiconductor optical device having an improved current blocking layer and manufacturing method thereof

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Semiconductor laser element having InGaAs compressive-strained quantum-well active layer

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Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs)

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Semiconductor laser light emitting device

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Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs)

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Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs)

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Method of manufacture for an ultraviolet laser diode