216069 ⎘
Semiconductor lasers; Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure; Buried mesa structure ; Striped active layer mesa created by etching
Integrated surface emitting laser and light amplifier
#302Semiconductor device
#303Gain-clamped semiconductor optical amplifier having horizontal lasing structure and manufacturing method thereof
#304Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs)
#305Method of operating an array of laser sources integrated in a monolithic chip or in a photonic integrated circuit (PIC)
#306Apparatus and method for tuning a laser source emission wavelength employing a laser source contact comprising electrode segments
#307Method and apparatus of monitoring and controlling the emission wavelengths of a plurality of laser sources integrated on the same chip or in the same photonic integrated circuit (PIC)
#308Method of tuning integrated laser sources with integrated wavelength tuning elements on the same substrate or in a monolithic photonic integrated circuit (PIC)
#309Method of tuning optical components integrated on a monolithic chip
#310Semiconductor laser device and method for fabricating the same
#311Vertical cavity surface emitting laser structure and manufacturing method thereof
#312Gallium and nitrogen containing laser device configured on a patterned substrate
#313Narrow-linewidth single-mode vertical-cavity surface-emitting laser
#314Gallium nitride containing laser device configured on a patterned substrate
#315Gallium nitride containing laser device configured on a patterned substrate
#316Gallium nitride containing laser device configured on a patterned substrate
#317Method of manufacturing optical semiconductor device
#318Gallium nitride containing laser device configured on a patterned substrate