Structure comprising a strained semiconductor layer on a heat sink

Semiconductor devices for lasing applications and methods of manufacturing such devices

Method of fabricating an optoelectronic component

Optoelectronic device comprising a central segment tensilely strained along a first axis and electrically biased along a second axis

Laser source with a germanium-based suspended membrane and an integrated waveguide that participates in forming the optical cavity

Semiconductor structure including a suspended membrane containing a central segment of structured thickness

Method for high-concentration doping of germanium with phosphorous

TECHNIQUES FOR FORMING OPTOELECTRONIC DEVICES

Method for depositing a crystal layer at low temperatures, in particular a photoluminescent IV-IV layer on an IV substrate, and an optoelectronic component having such a layer

TECHNIQUES FOR FORMING OPTOELECTRONIC DEVICES

Semiconductor arrangement and formation thereof

Device comprising a strained germanium membrane

Photonic device structure and fabrication method thereof

Semiconductor arrangement and formation thereof

High-concentration active doping in semiconductors and semiconductor devices produced by such doping

Laser using locally strained germanium on silicon for opto-electronic applications

Semiconductor laser device and method of fabricating the same

Semiconductor optical device

Oscillation device

LASER APPARATUS AND THE MANUFACTURING METHOD THEREOF

Nanotube array ballistic light emitting devices

Semiconductor laser device and manufacturing method of the same

Light-emitting diode

Quantum cascade laser with grating formed by a periodic variation in doping

Terahertz frequency band wavelength selector

Double heterojunction light emitting diodes and laser diodes having quantum dot silicon light emitters

Low noise optical pre-amplifier for ultra-low-light detectors and FPAs