Patents-Review.com
ClassID:

216089 ⎘

H01S5/3077 - CPC Classification

Classification description:

Semiconductor lasers; Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure plane dependent doping

Sub-classes:
Recent Application in this class:
#1
20250374714
2025-12-04

Polarization Doped Current Spreading in Optoelectronic Device

 #2
20250337220
2025-10-30

VERTICAL CAVITY SURFACE EMITTING LASER ELEMENT

 #3
20240364082
2024-10-31

RADIATION-EMITTING SEMICONDUCTOR BODY, LASER DIODE AND LIGHT-EMITTING DIODE

 #4
20220368110
2022-11-17

Semiconductor layer stack and method for producing same

 #5
20220294188
2022-09-15

Semiconductor optical element, semiconductor optical element forming structure, and method of manufacturing semiconductor optical element using the same

 #6
20220247154
2022-08-04

Edge emitting laser device

 #7
20220102942
2022-03-31

SiGeSn laser diodes and method of fabricating same

 #8
20210119419
2021-04-22

Semiconductor layer stack and method for producing same

 #9
20210057886
2021-02-25

Modulation doped semiconductor laser and manufacturing method therefor

 #10
20200412101
2020-12-31

Semiconductor light emitting element

 #11
20200403381
2020-12-24

Semiconductor optical element, semiconductor optical element forming structure, and method for manufacturing semiconductor optical element using the same

 #12
20200099195
2020-03-26

Vertical cavity surface emitting laser

 #13
20190214788
2019-07-11

Surface-emitting laser device and light emitting device including the same

 #14
20180166854
2018-06-14

Light-emitting semiconductor device, light-emitting semiconductor component and method for producing a light-emitting semiconductor device

 #15
20130322481
2013-12-05

LASER DIODES INCLUDING SUBSTRATES HAVING SEMIPOLAR SURFACE PLANE ORIENTATIONS AND NONPOLAR CLEAVED FACETS

 #16
20130223463
2013-08-29

Nitride semiconductor device and production method thereof

 #17
20120270346
2012-10-25

Asymmetric DBR pairs combined with periodic and modulation doping to maximize conduction and reflectivity, and minimize absorption

 #18
20120127564
2012-05-24

High-temperature interband cascade lasers

 #19
20110272670
2011-11-10

NITRIDE SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF

 #20
20110176122
2011-07-21

SURFACE EMITTING LASER ELEMENT, SURFACE EMITTING LASER ARRAY, OPTICAL SCANNING APPARATUS, AND IMAGE FORMING APPARATUS

 #21
20110096803
2011-04-28

Asymmetric DBR pairs combined with periodic and modulation doping to maximize conduction and reflectivity, and minimize absorption

 #22
20100290497
2010-11-18

Waveguide device having delta doped active region

 #23
20100289056
2010-11-18

SEMICONDUCTOR LIGHT-EMITTING DEVICES

 #24
20100097690
2010-04-22

High-temperature interband cascade lasers

 #25
20100019255
2010-01-28

Semiconductor light-emitting device

 #26
20090201963
2009-08-13

Vertical-cavity surface-emitting laser, module, optical transmission device, free space optical communication device, optical transmission system, and free space optical communication system

 #27
20080073660
2008-03-27

SEMICONDUCTOR LIGHT-EMITTING DEVICES

 #28
20080025360
2008-01-31

Semiconductor layer structure with superlattice

 #29
20070290230
2007-12-20

Nitride Semiconductor Device And Production Method Thereof

 #30
20070002915
2007-01-04

High-power infrared semiconductor diode light emitting device

 #31
20060045162
2006-03-02

Distributed Bragg Reflector for optoelectronic device

 #32
20050084997
2005-04-21

Ridge-type semiconductor laser element fabrication method

 #33
16217331
2020-01-28

Laterally tailoring current injection for laser diodes