216091 ⎘
Semiconductor lasers; Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
Sub-classes:HYBRID III-V SILICON OPTICAL DEVICES WITH OXIDE-BASED CURRENT CONFINEMENT
#2SEMICONDUCTOR DEVICE
#3SEMICONDUCTOR DEVICE
#4Light Extraction from Optoelectronic Device
#5RARE-EARTH-DOPED SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
#6SEMICONDUCTOR LASER DEVICE
#7OPTICAL SEMICONDUCTOR DEVICE AND SEMICONDUCTOR LASER DEVICE
#8GERMANIUM-ON-SILICON LASER IN CMOS TECHNOLOGY
#9Semiconductor laser device
#10METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL
#11Quantum cascade laser device
#12Surface emitting laser device, light-emitting device including the same and manufacturing method thereof
#13GERMANIUM-BASED LASER DIODE
#14Modulation doped semiconductor laser and manufacturing method therefor
#15Light extraction from optoelectronic device
#16Method for preparing ER- or ER/O-doped silicon-based luminescent material emitting communication band at room temperature, the luminescent material and ER- or ER/O-SI lasers
#17Semiconductor device
#18Germanium-on-silicon laser in CMOS technology
#19Reducing or eliminating nanopipe defects in III-nitride structures
#20Monolithic integrated semiconductor random laser
#21GaN-based VCSEL chip based on porous DBR and manufacturing method of the same
#22Method for producing nitride crystal and nitride crystal
#23LIGHT EMITTING DEVICE AND PROJECTOR
#24Semiconductor laser, electronic apparatus, and method of driving semiconductor laser
#25Reducing or eliminating nanopipe defects in III-nitride structures
#26VERTICAL CAVITY SURFACE EMITTING LASER, METHOD FOR FABRICATING VERTICAL CAVITY SURFACE EMITTING LASER
#27Laser device and methods for manufacturing the same
#28Integrated circuit implementing a VCSEL array or VCSEL device
#29Method for high-concentration doping of germanium with phosphorous
#30Germanium-on-silicon laser in CMOS technology
#31Electron beam pumped vertical cavity surface emitting laser
#32Semiconductor device
#33Semiconductor light-emitting device
#34Optoelectronic device with a nanowire semiconductor layer
#35Light extraction from optoelectronic device
#36Thermal emission source and two-dimensional photonic crystal for use in the same emission source
#37Method for producing nitride crystal and nitride crystal
#38SEMICONDUCTOR LASER DEVICE
#39Semiconductor device
#40Reducing or eliminating nanopipe defects in III-nitride structures
#41Semiconductor laser array, semiconductor laser element, semiconductor laser module, and wavelength-variable laser assembly
#42Monolithic integrated photonics with lateral bipolar and BiCMOS
#43Semiconductor layer sequence and method of operating an optoelectronic semiconductor chip
#44Electron beam pumped vertical cavity surface emitting laser
#45Nitride semiconductor device
#46High-concentration active doping in semiconductors and semiconductor devices produced by such doping
#47Nitride semiconductor device
#48Method of manufacture of an optoelectronic device and an optoelectronic device manufactured using the method
#49Electron beam pumped vertical cavity surface emitting laser
#50Method for producing nitride crystal and nitride crystal
#51Nitride semiconductor device
#52Interband cascade lasers with engineered carrier densities
#53ELECTRO-OPTICAL DEVICES BASED ON THE VARIATION IN THE INDEX OR ABSORPTION IN THE ISB TRANSITIONS
#54Group III nitride semiconductor device and epitaxial substrate
#55Method of fabricating group III nitride semiconductor device
#56METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE
#57SURFACE EMITTING LASER ELEMENT, SURFACE EMITTING LASER ARRAY, OPTICAL SCANNING APPARATUS, AND IMAGE FORMING APPARATUS
#58Group III nitride semiconductor device and epitaxial substrate
#59Optoelectronic semiconductor chip having a multiple quantum well structure
#60Quantum cascade laser
#61Waveguide device having delta doped active region
#62Nitride semiconductor device
#63Group III nitride semiconductor device, epitaxial substrate, and method of fabricating group III nitride semiconductor device
#64Quantum cascade laser
#65Optical semiconductor device having active layer of p-type quantum dot structure and its manufacture method
#66Nitride semiconductor laser device and method of producing the same
#67STACKED THREE DIMINESIONAL PHOTONIC CRYSTAL, LIGHT EMITTING DEVICE, AND IMAGE DISPLAY APPARATUS
#68Quantum dot semiconductor device
#69Semiconductor light emitting device and fabrication method for semiconductor light emitting device
#70Optical semiconductor device having active layer of p-type quantum dot structure and its manufacture method
#71Optical semiconductor device having ridge structure formed on active layer containing p-type region and its manufacture method
#72Semiconductor light emitting element, method of manufacturing the same and semiconductor light emitting device
#73Nitride semiconductor device
#74GaN-based semiconductor light-emitting device, light illuminator, image display planar light source device, and liquid crystal display assembly
#75Method and structure of germanium laser on silicon
#76Terahertz lasers and amplifiers based on resonant optical phonon scattering to achieve population inversion
#77Vertical cavity surface emitting semiconductor laser, light emission device, and optical transmission system
#78Surface-emitting laser element and laser module using the same
#79Semiconductor optical device
#80Nitride semiconductor; light-emitting device, light-emitting diode, laser device and lamp using the semiconductor; and production methods thereof
#81Broadened waveguide for interband cascade lasers
#82Method of forming a nitride-based semiconductor
#83Radiation-emitting semi-conductor component
#84Semiconductor laser and method of fabricating the same
#85Semiconductor laser having optical guide layer doped for decreasing resistance
#86Light-emitting semiconductor device and a method of manufacturing it
#87Method of fabricating semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation
#88Method of fabricating semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation
#89Nitride semiconductor device
#90Gallium-nitride-based light-emitting apparatus
#91Group III nitride semiconductor light-emitting element and method of manufacturing the same
#92Quantum cascade laser device
#93Semiconductor light-emitting element and method of manufacturing the same
#94Stacked three dimensional photonic crystal, light emitting device, and image display apparatus
#95Laser diode having an active layer containing N and operable in a 0.6 μm wavelength
#96Quantum well structure and semiconductor device using it and production method of semiconductor element
#97Semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation
#98Circular polarization spin semiconductor laser using magnetic semiconductor and laser beam generating method
#99Laser apparatus in which GaN-based compound surface-emitting semiconductor element is excited with GaN-based compound semiconductor laser element
#100Nitride semiconductor device
#101Semiconductor device and a method for the manufacture thereof
#102Semiconductor laser device and method for fabricating the same
#103Terahertz lasers and amplifiers based on resonant optical phonon scattering to achieve population inversion
#104Metal waveguides for mode confinement in terahertz lasers and amplifiers
#105Use of deep-level transitions in semiconductor devices
#106Semiconductor laser array device employing modulation doped quantum well structures