216095 ⎘
Semiconductor lasers; Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICES AND INTEGRATED PHOTONICS SYSTEM
#2TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICES AND INTEGRATED PHOTONICS SYSTEM
#3OPTICAL DEVICE, METHOD OF FORMING THE SAME, AND METHOD OF CONTROLLING THE SAME
#4TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICES AND INTEGRATED PHOTONICS SYSTEM
#5Tensile strained semiconductor photon emission and detection devices and integrated photonics system
#6SEMICONDUCTOR MULTILAYER STRUCTURE
#7Array of surface-emitting lasers with high-brightness unipolar output
#8Semiconductor component with a stress compensation layer and a method for manufacturing a semiconductor component
#9Low Resistance Vertical Cavity Light Source with PNPN Blocking
#10Optoelectronic device comprising a central segment tensilely strained along a first axis and electrically biased along a second axis
#11Tensile strained semiconductor photon emission and detection devices and integrated photonics system
#12Low resistance vertical cavity light source with PNPN blocking
#13Semiconductor multilayer structure
#14Laser diodes separated from a plurality of laser bars
#15Tunable VCSEL polarization control through dissimilar die bonding
#16Edge-emitting semiconductor laser
#17Edge-emitting semiconductor laser and method for operating a semiconductor laser
#18Tensile strained semiconductor photon emission and detection devices and integrated photonics system
#19Externally-strain-engineered semiconductor photonic and electronic devices and assemblies and methods of making same
#20Method of producing a plurality of laser diodes and laser diode
#21Low resistance vertical cavity light source with PNPN blocking
#22Optical semiconductor device, optical subassembly, and optical module
#23Structure for reducing compound semiconductor wafer distortion
#24Semiconductor laser diode
#25Laserdiode
#26Three-dimensional semiconductor nanoheterostructure and method of making same
#27Semiconductor multilayer film reflecting mirror, vertical cavity light-emitting element using the reflecting mirror, and methods for manufacturing the reflecting mirror and the element
#28Light emitting element
#29Externally-strain-engineered semiconductor photonic and electronic devices and assemblies and methods of making same
#30Tensile strained semiconductor photon emission and detection devices and integrated photonics system
#31Surface emitting laser and atomic oscillator
#32Low resistance vertical cavity light source with PNPN blocking
#33Edge-emitting semiconductor laser and method for operating a semiconductor laser
#34Surface-emitting device, vertical external-cavity surface-emitting laser, and method for manufacturing surface-emitting device
#35Nitride semiconductor device and quantum cascade laser using the same
#36Method of production of a semiconducting structure comprising a strained portion
#37Controlling the emission wavelength in group III-V semiconductor laser diodes
#38Semiconductor nano/microlaser tuning by strain engineering
#39Tensile strained semiconductor photon emission and detection devices and integrated photonics system
#40Electro-optical component
#41Tensile strained semiconductor photon emission and detection devices and integrated photonics system
#42Vertical cavity surface emitting laser and atomic oscillator
#43Vertical cavity surface emitting laser and atomic oscillator
#44Vertical cavity surface emitting laser and atomic oscillator
#45Vertical cavity surface emitting laser and atomic oscillator
#46CMOS-compatible germanium tunable laser
#47Semiconductor DBR, semiconductor light-emitting device, solid-state laser, photoacoustic apparatus, image-forming apparatus, and method for manufacturing semiconductor DBR
#48Tensile strained semiconductor photon emission and detection devices and integrated photonics system
#49Semiconductor optical element
#50Vertical cavity surface emitting laser
#51Tunable device, method of manufacture, and method of tuning an electrical device
#52Semiconductor light emitting device
#53Electro-optical component
#54Surface emitting laser incorporating third reflector
#55Method of producing an optoelectronic semiconductor chip, and such a semiconductor chip
#56Integration of laser into optical platform
#57Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations
#58Optical semiconductor device
#59Laser using locally strained germanium on silicon for opto-electronic applications
#60Waveguide-type optical semiconductor device
#61Nitride semiconductor laser, epitaxial substrate
#62Tensile strained semiconductor photon emission and detection devices and integrated photonics system
#63Semiconductor light-emitting element and manufacturing method thereof
#64GROUP III NITRIDE SEMICONDUCTOR LASER DEVICE, EPITAXIAL SUBSTRATE, METHOD OF FABRICATING GROUP III NITRIDE SEMICONDUCTOR LASER DEVICE
#65SEMICONDUCTOR LIGHT EMITTING DEVICE, WAFER, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE
#66Nitride semiconductor laser and epitaxial substrate
#67Layer assembly
#68Enhanced planarity in GaN edge emitting lasers
#69Light emitting diode with polarization control
#70SEMICONDUCTOR LASER DEVICE
#71LASER DIODE AND METHOD OF FABRICATION THE LASER DIODE
#72Vertical cavity surface emitting laser, vertical-cavity-surface-emitting-laser device, optical transmission apparatus, and information processing apparatus
#73Nitride based semiconductor device and fabrication method for the same
#74Nitride semiconductor light emitting device
#75Nitride semiconductor light emitting device and epitaxial substrate
#76STRAIN COMPENSATED SHORT-PERIOD SUPERLATTICES ON SEMIPOLAR OR NONPOLAR GAN FOR DEFECT REDUCTION AND STRESS ENGINEERING
#77SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF
#78Limiting strain relaxation in III-nitride hetero-structures by substrate and epitaxial layer patterning
#79Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys
#80Nitride semiconductor light emitting device, epitaxial substrate, and method for fabricating nitride semiconductor light emitting device
#81Enhanced planarity in GaN edge emitting lasers
#82GaN-based laser diodes with misfit dislocations displaced from the active region
#83Laser diode and semiconductor light-emitting device producing visible-wavelength radiation
#84Semiconductor optical amplifier and optical amplification apparatus
#85Method of growing semiconductor heterostructures based on gallium nitride
#86SEMICONDUCTOR LASER AND MANUFACTURING METHOD THEREOF
#87Optoelectronic semiconductor chip and method for the production thereof
#88Light-emitting device, light-receiving device and method of manufacturing the same
#89Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method
#90Gallium nitride based semiconductor light-emitting device and method for fabricating the same, gallium nitride based light-emitting diode, epitaxial wafer, and method for fabricating gallium nitride light-emitting diode
#91METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE
#92OPTICAL SEMICONDUCTOR DEVICE
#93LASER DIODE AND METHOD OF MANUFACTURING LASER DIODE
#94Application-oriented nitride substrates for epitaxial growth of electronic and optoelectronic device structures
#95SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND OPTICAL APPARATUS
#96Vertical-cavity surface emitting laser
#97Semipolar or nonpolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerface
#98Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations
#99SURFACE EMITTING LASER, SURFACE EMITTING LASER ARRAY, AND OPTICAL APPARATUS
#100Optical amplifier and method for suppressing polarization dependent gain of optical amplifier
#101Nitride semiconductor wafer, nitride semiconductor chip, and method of manufacture of nitride semiconductor chip
#102Semiconductor laser apparatus
#103Optical device including multilayer reflector and vertical cavity surface emitting laser
#104Vertical cavity surface emitting laser element, vertical cavity surface emitting laser array element, vertical cavity surface emitting laser device, light source device, and optical module
#105Laser diode and semiconductor light-emitting device producing visible-wavelength radiation
#106Multi-electrode light emitting device
#107Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys
#108Method of growing semiconductor heterostructures based on gallium nitride
#109Surface emitting laser device
#110Nitride based semiconductor device and fabrication method for the same
#111NITRIDE COMPOUND SEMICONDUCTOR DEVICE AND SEMICONDUCTOR LASER
#112Semiconductor light emitting element and method of manufacturing therefor
#113Vertical-cavity, surface-emission type laser diode and fabrication process thereof
#114SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR FABRICATING THE SAME
#115Surface-emitting laser diode and method of manufacturing the same
#116Monolithically integrated laser diode chip having a construction as a multiple beam laser diode
#117Migration enhanced epitaxy fabrication of active regions having quantum wells
#118Semiconductor laser device
#119GaN lasers on ALN substrates and methods of fabrication
#120SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF
#121Nitride semiconductor laser chip and fabrication method thereof
#122Semiconductor laser device
#123Semiconductor laser apparatus and method for mounting semiconductor laser apparatus
#124Semiconductor laser diode element and method of manufacturing the same
#125Semiconductor device and manufacturing method therefor
#126Laser diode
#127Semiconductor laser diode apparatus and method of fabricating the same
#128Surface emitting laser device
#129Method for fabricating nitride semiconductor laser device and nitride semiconductor laser device
#130Buried semiconductor laser and method for manufacturing the same
#131Gallium Nitride Based Semiconductor Device with Reduced Stress Electron Blocking Layer
#132Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method
#133Optical device including multilayer reflector and vertical cavity surface emitting laser
#134Group III nitride semiconductor light-emitting device
#135Semiconductor device and manufacturing method therefor
#136Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor
#137Vertical-cavity, surface-emission type laser diode and fabrication process thereof
#138Surface emitting laser diode
#139SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR FABRICATING THE SAME
#140Semiconductor laser device and fabrication method therefor
#141Semiconductor device and manufacturing method thereof
#142Semiconductor laser device
#143Laser diode and semiconductor light-emitting device producing visible-wavelength radiation
#144Semiconductor light-emitting material with tetrahedral structure formed therein
#145Passive mode-locked semiconductor laser diode, and optical clock signal extracting device
#146Semiconductor optical amplification device and optical integrated circuit
#147Semiconductor laser device and method for fabricating the same
#148Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method
#149Migration enhanced epitaxy fabrication of active regions having quantum wells
#150Method of fabricating semiconductor optical device
#151Vertical cavity surface emitting laser diode
#152Vertical-cavity surface-emission type laser diode and fabrication process thereof
#153Multiple GaInNAs quantum wells for high power applications
#154Extended wavelength strained layer lasers having nitrogen disposed therein
#155Semiconductor laser diode and optical module
#156Laser diode device with nitrogen incorporating barrier
#157Nitride based semiconductor laser diode device with a bar mask
#158Strain compensating structure to reduce oxide-induced defects in semiconductor devices
#159Reliability-enhancing layers for vertical cavity surface emitting lasers
#160Detailed description of the presently preferred embodiments
#161Nitride semiconductor laser
#162Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region
#163Semiconductor laser diode with removable high reflection film and method of manufacturing the same
#164Migration enhanced epitaxy fabrication of quantum wells
#165Multicomponent barrier layers in quantum well active regions to enhance confinement and speed
#166Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers
#167Vertical cavity surface emitting laser diode and method for manufacturing the same
#168Stacked semiconductor laser diode
#169Semiconductor optical device on an indium phosphide substrate for long operating wavelengths
#170Nitride semiconductor device and manufacturing method thereof
#171Surface emitting semiconductor laser device
#172System for developing a nitrogen-containing active region
#173Semiconductor light emitting element and method for fabricating the same
#174Pseudomorphic layer in tunnel junction VCSEL
#175Strained and strain control regions in optical devices
#176Strained and strain control regions in optical devices
#177Low resistance vertical cavity light source with PNPN blocking
#178Method of strain engineering and related optical device using a gallium and nitrogen containing active region