H01S5/3203 - CPC Classification Index

ClassID:

216097 ⎘

H01S5/3203 - CPC Classification

Classification description:

Semiconductor lasers; Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth on non-planar substrates to create thickness or compositional variations

Recent Application in this class:

20260075990

2026-03-12

Network Configuration of Top-of-Rack Switches Across Multiple Racks in a Data Center

20240396288

2024-11-28

FORMING REFLECTIVE MATERIALS ON SURFACES OF OPTICAL ELEMENTS

20240038931

2024-02-01

Epitaxial substrate having a 2D material interposer, method for manufacturing the epitaxial substrate, and device prepared from the epitaxial substrate

20230238767

2023-07-27

LASER-BASED INTEGRATED LIGHT SOURCE

20220376462

2022-11-24

Laser-phosphor integrated light source

20210226410

2021-07-22

SPECIALIZED INTEGRATED LIGHT SOURCE USING A LASER DIODE

20210151956

2021-05-20

Integrated white light source using a laser diode and a phosphor in a surface mount device package

20190157842

2019-05-23

Light emitting element

20190103481

2019-04-04

Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structure

#10

20180316160

2018-11-01

Integrated white light source using a laser diode and a phosphor in a surface mount device package

#11

20180212402

2018-07-26

Light emitting element

#12

20170051883

2017-02-23

Specialized integrated light source using a laser diode

#13

20130069107

2013-03-21

Nitride semiconductor light emitting device and method of manufacturing the same

#14

20120009711

2012-01-12

SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD FOR MANUFACTURING SAME, AND METHOD FOR FORMING UNDERLYING LAYER

#15

20110281424

2011-11-17

Relaxed InGaN/AlGaN templates

#16

20110250714

2011-10-13

Nitride semiconductor and method for manufacturing same

#17

20110216796

2011-09-08

Surface emitting laser

#18

20110169025

2011-07-14

Semiconductor optical element array and method of manufacturing the same

#19

20110150017

2011-06-23

Relaxed InGaN/AlGaN templates

#20

20110051770

2011-03-03

Semiconductor laser device

#21

20100301348

2010-12-02

Nitride semiconductor wafer, nitride semiconductor chip, and method of manufacture of nitride semiconductor chip

#22

20100265981

2010-10-21

NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DIODE, NITRIDE-BASED SEMICONDUCTOR LASER DEVICE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF FORMING NITRIDE-BASED SEMICONDUCTOR LAYER

#23

20100240161

2010-09-23

Method for fabricating nitride semiconductor light-emitting device

#24

20100074290

2010-03-25

SEMICONDUCTOR LASER DEVICE

#25

20090159924

2009-06-25

SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR FABRICATING THE SAME

#26

20090101935

2009-04-23

Nitride semiconductor and method for manufacturing same

#27

20090072253

2009-03-19

Semiconductor light emitting device, method for manufacturing same, and method for forming underlying layer

#28

20090050917

2009-02-26

Semiconductor light emitting device

#29

20080298411

2008-12-04

NITRIDE-BASED SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME

#30

20080198890

2008-08-21

VERTICALLY EMITTING LASER AND METHOD OF MAKING THE SAME

#31

20080056322

2008-03-06

Nitride semiconductor laser element having nitride semiconductor substrate and nitride semiconductor layer laminated thereon with nitride semiconductor substrate and nitride semiconductor layer having recesses formed in high dislocation density region of nitride semiconductor substrate and nitride semiconductor layer having portions with different film thicknesses

#32