216102 ⎘
Semiconductor lasers; Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures having intermediate bandgap layers
NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT
#2SEMICONDUCTOR OPTICAL ELEMENT, MEASUREMENT DEVICE AND LIGHT SOURCE DEVICE USING SEMICONDUCTOR OPTICAL ELEMENT, AND METHOD OF MANUFACTURING SEMICONDUCTOR OPTICAL ELEMENT
#3Optoelectronic device comprising a semiconductor layer based on GeSn having a single-crystal portion with a direct band structure and an underlying barrier region
#4Semiconductor device, semiconductor laser, and method of producing a semiconductor device
#5Semiconductor device, semiconductor laser, and method of producing a semiconductor device
#6Semiconductor light-emitting device, display unit, and electronic apparatus
#7Semiconductor device
#8BIPOLAR DIODE HAVING AN OPTICAL QUANTUM STRUCTURE ABSORBER
#9Semiconductor laser
#10Semiconductor light emitting device
#11Semiconductor chip having a reduced band offset in its p-doped region and method for producing the semiconductor chip
#12Semiconductor optoelectronic device and method of fabricating the same
#13Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor
#14Semiconductor laser and process for manufacturing the same
#15Detailed description of the presently preferred embodiments
#16Nitride semiconductor laser
#17Semiconductor laser device
#18Perovskite-based white or multi-wavelength laser