216106 ⎘
Semiconductor lasers; Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities graded composition cladding layers
METHOD OF PRODUCING ULTRAVIOLET LASER DIODE
#2SURFACE EMITTING LASER
#3LIGHT-EMITTING DEVICE
#4Method of producing ultraviolet laser diode, and ultraviolet laser diode
#5Method for manufacturing optical device and optical device
#6Cladding glass for solid-state lasers
#7Nitride semiconductor element
#8Laser diode
#9Semiconductor laser
#10Two-dimensional photonic crystal surface-emitting laser with transparent conductive cladding layer
#11Quantum cascade laser
#12Nitride semiconductor device and quantum cascade laser using the same
#13Nitride laser diode with engineered non-uniform alloy composition in the n-cladding layer
#14Semiconductor laser with improved current conduction
#15Semiconductor light emitting device and method for manufacturing same
#16Nitride semiconductor device and production method thereof
#17Optoelectronic Semiconductor Body with a Quantum Well Structure
#18SEMICONDUCTOR TWO-PHOTO DEVICE
#19Nitride based semiconductor device and fabrication method for the same
#20Surface emitting laser, light source, and optical module
#21NITRIDE SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF
#22Method for producing a radiation-emitting component and radiation-emitting component
#23Optoelectronic semiconductor chip and method for the production thereof
#24Surface emitting laser, surface emitting laser array, light source and optical module
#25Semiconductor laser, semiconductor laser device, and fabrication method of semiconductor laser
#26Semiconductor layer structure with superlattice
#27METHOD FOR PRODUCING SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING DEVICE, METHOD FOR GROWING NITRIDE TYPE III-V GROUP COMPOUND SEMICONDUCTOR LAYER, METHOD FOR GROWING SEMICONDUCTOR LAYER, AND METHOD FOR GROWING LAYER
#28Group III nitride semiconductor laser
#29Semiconductor light emitter
#30Nitride semiconductor optical element and manufacturing method thereof
#31Nitride based semiconductor device and fabrication method for the same
#32Semiconductor Laser Element and Method of Fabrication Thereof
#33Monolithically integrated laser diode chip having a construction as a multiple beam laser diode
#34Semiconductor light emitting device
#35Semiconductor chip having a reduced band offset in its p-doped region and method for producing the semiconductor chip
#36Semiconductor device and manufacturing method therefor
#37Semiconductor laser diode having graded interlayer
#38Semiconductor layer structure with superlattice
#39Semiconductor layer structure with superlattice
#40Surface-emission laser diode operable in the wavelength band of 1.1-1.7 micrometers and optical telecommunication system using such a laser diode
#41Semiconductor optical device and manufacturing method thereof
#42Nitride Semiconductor Device And Production Method Thereof
#43Semiconductor device and manufacturing method therefor
#44Red light laser
#45Semiconductor light emitter
#46Method and structure of germanium laser on silicon
#47SEMICONDUCTOR LASER ELEMENT AND METHOD OF FABRICATION THEREOF
#48Nitride semiconductor light emitting device
#49Semiconductor light emitting device
#50High-power infrared semiconductor diode light emitting device
#51METHOD FOR PRODUCING SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING DEVICE, METHOD FOR GROWING NITRIDE TYPE III-V GROUP COMPOUND SEMICONDUCTOR LAYER, METHOD FOR GROWING SEMICONDUCTOR LAYER, AND METHOD FOR GROWING LAYER
#52Control of output beam divergence in a semiconductor waveguide device
#53Semiconductor device
#54Semiconductor device and semiconductor light emitting device
#55METHOD FOR PRODUCING SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING DEVICE, METHOD FOR GROWING NITRIDE TYPE III-V GROUP COMPOUND SEMICONDUCTOR LAYER, METHOD FOR GROWING SEMICONDUCTOR LAYER, AND METHOD FOR GROWING LAYER
#56Semiconductor light emitter
#57Method for producing semiconductor light emitting device, method for producing semiconductor device, method for producing device, method for growing nitride type III-V group compound semiconductor layer, method for growing semiconductor layer, and method for growing layer
#58Vertically coupled large area amplifier
#59Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device
#60Semiconductor laser element and semiconductor laser element manufacturing method
#61Semiconductor laser element including optical waveguide layers which have gradually varying bandgaps so as to reduce electrical resistance at interfaces
#62Epitaxial growth of p-type cladding regions using nitrogen gas for a gallium and nitrogen containing laser diode