216108 ⎘
Semiconductor lasers; Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities specially strained cladding layers, other than for strain compensation
LIGHT-EMITTING DEVICE
#2STRAIN-ENGINEERED CLADDING LAYER FOR OPTIMIZED ACTIVE REGION STRAIN AND IMPROVED LASER DIODE PERFORMANCE
#3Structure comprising a strained semiconductor layer on a heat sink
#4Mid-infrared vertical cavity laser
#5Mid-infrared vertical cavity laser
#6Optical semiconductor device, optical subassembly, and optical module
#7Nitride semiconductor device and quantum cascade laser using the same
#8Semiconductor light emitting device and method for manufacturing same
#9Semiconductor light emitting device and method for manufacturing same
#10Semiconductor light emitting device and method for manufacturing same
#11Semiconductor layer structure with superlattice
#12Optoelectronic devices
#13Vertical cavity surface emitting laser (VCSEL), VCSEL array device, optical scanning apparatus, and image forming apparatus
#14Vertical-cavity, surface-emission type laser diode and fabrication process thereof
#15SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF
#16Semiconductor layer structure with superlattice
#17Vertical-cavity, surface-emission type laser diode and fabrication process thereof
#18Semiconductor device
#19Vertical-cavity surface-emission type laser diode and fabrication process thereof
#20Epitaxial growth of p-type cladding regions using nitrogen gas for a gallium and nitrogen containing laser diode