216109 ⎘
Semiconductor lasers; Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities explicitly Al-free cladding layers
SEMICONDUCTOR DEVICE
#2Edge-emitting laser having small vertical emitting angle
#3Method and device concerning III-nitride edge emitting laser diode of high confinement factor with lattice matched cladding layer
#4SEMICONDUCTOR LASER DIODE AND LASER ARRAY IMPLEMENTING THE SAME
#5Semiconductor optical element
#6Vertical-cavity, surface-emission type laser diode and fabrication process thereof
#7Nanowire devices and systems, light-emitting nanowires, and methods of precisely positioning nanoparticles
#8Vertical-cavity, surface-emission type laser diode and fabrication process thereof
#9Nanowire devices and systems, light-emitting nanowires, and methods of precisely positioning nanoparticles
#10Vertical-cavity surface-emission type laser diode and fabrication process thereof
#11Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure
#12Optical semiconductor device having an active layer containing N
#13Edge-emitting laser having small vertical emitting angle
#14Epitaxial growth of p-type cladding regions using nitrogen gas for a gallium and nitrogen containing laser diode
#15Method and structure for laser devices using optical blocking regions