216141 ⎘
Semiconductor lasers; Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well lasers [SQW-lasers], multiple quantum well lasers [MQW-lasers] or graded index separate confinement heterostructure lasers [GRINSCH-lasers] comprising partially disordered wells or barriers
Sub-classes:BROADENED SPECTRUM LASER DIODE FOR DISPLAY DEVICE
#2Broadened spectrum laser diode for display device
#3Semiconductor layer structure with a thick buffer layer
#4Semiconductor device, and method for manufacturing semiconductor device
#5Semiconductor layer including compositional inhomogeneities
#6Device with transparent and higher conductive regions in lateral cross section of semiconductor layer
#7Monolithic WDM VCSEL arrays by quantum well intermixing
#8Semiconductor layer including compositional inhomogeneities
#9Semiconductor layer including compositional inhomogeneities
#10Semiconductor layer including compositional inhomogeneities
#11Multiquantum well structures for suppression of electron leakage and reduction of threshold-current density in quantum cascade lasers
#12Broadband semiconductor laser
#13Spatial bandgap modifications and energy shift of semiconductor structures
#14Quantum Well Intermixing in Semiconductor Photonic Devices
#15Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor
#16Spatial bandgap modifications and energy shift of semiconductor structures
#17Semiconductor optical amplifier using laser cavity energy to amplify signal and method of fabrication thereof
#18Integrated optical device
#19High efficiency III-nitride light-emitting diodes