216147 ⎘
Semiconductor lasers; Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well lasers [SQW-lasers], multiple quantum well lasers [MQW-lasers] or graded index separate confinement heterostructure lasers [GRINSCH-lasers] containing short period superlattices [SPS]
Pumped edge emitters with metallic coatings
#2Interband cascade lasers with low-fill-factor top contact for reduced loss
#3Device with transparent and higher conductive regions in lateral cross section of semiconductor layer
#4Structure for electron-beam pumped edge-emitting device and methods for producing same
#5Staggered composition quantum well method and device
#6Emitting device with compositional and doping inhomogeneities in semiconductor layers
#7Emitting device with compositional and doping inhomogeneities in semiconductor layers
#8Submount, submount assembly, and submount assembling method
#9Aluminum gallium nitride barriers and separate confinement heterostructure (SCH) layers for semipolar plane III-nitride semiconductor-based light emitting diodes and laser diodes
#10Staggered composition quantum well method and device
#11Nitride semiconductor device
#12Extended wavelength strained layer lasers having nitrogen disposed therein
#13Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region