216151 ⎘
Semiconductor lasers; Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well lasers [SQW-lasers], multiple quantum well lasers [MQW-lasers] or graded index separate confinement heterostructure lasers [GRINSCH-lasers] comprising couples wells or superlattices
ZINC OXIDE-BASED QUANTUM CASCADE LASER ELEMENT
#2EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES
#3III-NITRIDE-BASED HIGH EFFICIENCY AND HIGH-POWER DEVICES GROWN ON OR ABOVE A STRAIN RELAXED TEMPLATE
#4SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME
#5Semiconductor layer structure with a thin blocking layer
#6Epitaxial oxide materials, structures, and devices
#7Epitaxial oxide materials, structures, and devices
#8SEMICONDUCTOR LASER ELEMENT
#9Semiconductor Structures
#10Light emitting apparatus and projector
#11Semiconductor device
#12SEMICONDUCTOR DEVICE AND FABRICATION METHOD
#13Semiconductor layer structure with a thin blocking layer
#14Surface emitting laser device and light emitting device including the same
#15Semiconductor light emitting device
#16SEMICONDUCTOR DEVICE AND FABRICATION METHOD
#17Quantum cascade laser element
#18Semiconductor layer sequence having pre- and post-barrier layers and quantum wells
#19Semiconductor light emitting device
#20Semiconductor light-emitting device
#21SEMICONDUCTOR LASER
#22Semiconductor light emitting element
#23Quantum cascade laser element
#24Optoelectronic semiconductor chip
#25Mid-IR multiwavelength concatenated distributed-feedback laser with an active core made of cascaded stages
#26ANISOTROPIC STRAIN CONTROL IN SEMIPOLAR NITRIDE QUANTUM WELLS BY PARTIALLY OR FULLY RELAXED ALUMINUM INDIUM GALLIUM NITRIDE LAYERS WITH MISFIT DISLOCATIONS
#27Multiquantum well structures for suppression of electron leakage and reduction of threshold-current density in quantum cascade lasers
#28Optoelectronic semiconductor chip
#29Laser emission systems, heterostructure and active zone having coupled quantum-wells, and use for 1.55 mm laser emission
#30Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations
#31MODE-LOCKED EXTERNAL-CAVITY SURFACE-EMITTING SEMICONDUCTOR LASER
#32Semiconductor laser device and manufacturing method of the same
#33Metal oxide semiconductor film structures and methods
#34Terahertz radiating device based on semiconductor coupled quantum wells
#35Broadened waveguide for interband cascade lasers
#36Semiconductor laser device and optical fiber amplifier
#37Type II quantum well mid-infrared optoelectronic devices
#38Efficient light emitting diodes and lasers
#39Semiconductor laser device and method for fabricating the same
#40Semiconductor laser device and production method therefor
#41Terahertz radiating device based on semiconductor coupled quantum wells
#42Semiconductor laser device and optical fiber amplifier
#43Epitaxial oxide materials, structures, and devices