216154 ⎘
Semiconductor lasers; Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well lasers [SQW-lasers], multiple quantum well lasers [MQW-lasers] or graded index separate confinement heterostructure lasers [GRINSCH-lasers] layer orientation perpendicular to the substrate
LASER DIODES, LEDS, AND SILICON INTEGRATED SENSORS ON PATTERNED SUBSTRATES
#2Optoelectronic device comprising a semiconductor layer based on GeSn having a single-crystal portion with a direct band structure and an underlying barrier region
#3Light emitting apparatus and projector
#4Nanowire laser structure and fabrication method
#5Semiconductor laser diode and method of fabricating the same
#6Light-emitting assembly having a carrier
#7Semiconductor laser
#8Multicolor photonic crystal laser array
#9SEMICONDUCTOR LIGHT EMITTING DEVICE, WAFER, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE
#10Light emitting element and method for manufacturing same
#11Pulsed growth of catalyst-free growth of GaN nanowires and application in group III nitride semiconductor bulk material
#12DEFECT-FREE GROUP III - NITRIDE NANOSTRUCTURES AND DEVICES USING PULSED AND NON-PULSED GROWTH TECHNIQUES
#13Thin-walled structures
#14Light-emitting device and manufacturing method of the same
#15Pulsed growth of catalyst-free growth of GaN nanowires and application in group III nitride semiconductor bulk material
#16Semiconductor system having a ring laser fabricated by epitaxial layer overgrowth
#17Pulsed growth of catalyst-free growth of GaN nanowires and application in group III nitride semiconductor bulk material
#18Semiconductor system having a ring laser fabricated by expitaxial layer overgrowth
#19VCSEL system with transverse P/N junction
#20Nano-VCSEL device and fabrication thereof using nano-colonnades
#21Nanowire interconnection and nano-scale device applications