ClassID:

216170

H01S5/347 - CPC Classification

Classification description:

Semiconductor lasers; Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well lasers [SQW-lasers], multiple quantum well lasers [MQW-lasers] or graded index separate confinement heterostructure lasers [GRINSCH-lasers] in AB compounds, e.g. ZnCdSe- laser

Recent Application in this class:
#1
20260018865
2026-01-15

ZINC OXIDE-BASED QUANTUM CASCADE LASER ELEMENT

#2
20220235263
2022-07-28

METHODS FOR OBTAINING AN N-TYPE DOPED METAL CHALCOGENIDE QUANTUM DOT SOLID-STATE ELEMENT WITH OPTICAL GAIN AND A LIGHT EMITTER INCLUDING THE ELEMENT, AND THE OBTAINED ELEMENT AND LIGHT EMITTER

#3
20220020896
2022-01-20

Infrared light emitters based on interband tunneling in unipolar doped n-type tunneling structures

#4
20210083453
2021-03-18

Fabrication of ellipsoidal or semi-ellipsoidal semiconductor structures

#5
20200244038
2020-07-30

Optically cooled platform for thermal management applications

#6
20200185885
2020-06-11

UNIPOLAR LIGHT DEVICES INTEGRATED WITH FOREIGN SUBSTRATES AND METHODS OF FABRICATION

#7
20200083669
2020-03-12

Addressable laser array device including vertical cavity surface emitting lasers adopting nanostructure reflector disposed at intersections of plural wiring patterns

#8
20200083667
2020-03-12

Plasmonic quantum well laser

#9
20190386453
2019-12-19

Plasmonic quantum well laser

#10
20190089129
2019-03-21

Devices with quantum dots

#11
20180054042
2018-02-22

High power CW mid-IR laser

#12
20170317473
2017-11-02

Devices with quantum dots

#13
20170085058
2017-03-23

Continuous-wave pumped colloidal nanocrystal laser

#14
20150288147
2015-10-08

Device comprising a high brightness broad-area edge-emitting semiconductor laser and method of making the same

#15
20150286006
2015-10-08

HIGH EFFICIENCY VERTICAL OPTICAL COUPLER USING SUB-WAVELENGTH HIGH CONTRAST GRATING

#16
20150076408
2015-03-19

Red, green, and blue lasing enabled by single-exciton gain in colloidal quantum dot films

#17
20140376583
2014-12-25

Optoelectronic device containing at least one active device layer having a wurtzite crystal structure, and methods of making same

#18
20140376577
2014-12-25

Variable bandgap modulator for a modulated laser system

#19
20140367641
2014-12-18

Multilayer construction

#20
20140024159
2014-01-23

Optoelectronic device containing at least one active device layer having a wurtzite crystal structure, and methods of making same

#21
20130109183
2013-05-02

Multilayer construction

#22
20120298951
2012-11-29

Optoelectronic Semiconductor Body with a Quantum Well Structure

#23
20110150020
2011-06-23

II-VI MQW VSEL on a heat sink optically pumped by a GaN LD

#24
20100276730
2010-11-04

SEMICONDUCTOR DEVICE

#25
20100111124
2010-05-06

Pumped semiconductor laser systems and methods

#26
20100080256
2010-04-01

High performance ZnO-based laser diodes

#27
20100032008
2010-02-11

ZINC OXIDE MULTI-JUNCTION PHOTOVOLTAIC CELLS AND OPTOELECTRONIC DEVICES

#28
20090294758
2009-12-03

ZnO-containing semiconductor layer, its manufacture method, and semiconductor light emitting device

#29
20090141763
2009-06-04

SEMICONDUCTOR LASER

#30
20080298415
2008-12-04

Semiconductor device

#31
20080247434
2008-10-09

SEMICONDUCTOR LIGHT-EMITTING DEVICE

#32
20080224171
2008-09-18

Light Emitting Device with Filtering Layer

#33
20080224121
2008-09-18

SPONTANEOUS EMISSION OF TELECOMMUNICATION WAVELENGTH EMITTERS COUPLED TO AT LEAST ONE RESONANT CAVITY

#34
20080175289
2008-07-24

Vertical cavity laser faceplate with diffraction grating

#35
20080049803
2008-02-28

Semiconductor laser diode device

#36
20080031300
2008-02-07

Inclined Pump Beam Radiation Emitter

#37
20070220713
2007-09-27

Method for Forming Zno Nano-Array and Zno Nanowall for Uv Laser On Silicon Substrate

#38
20070051937
2007-03-08

Optical semiconductor devices on InP substrate

#39
20070036194
2007-02-15

Excimer-lamp pumped semiconductor laser

#40
20060076566
2006-04-13

Light emitting device and optical device using the same

#41
20050287817
2005-12-29

Low dielectric constant group II-VI insulator

#42
20050285138
2005-12-29

Persistent p-type group II-IV semiconductors

#43
20050285119
2005-12-29

Dynamic p-n junction growth

#44
20050276301
2005-12-15

InGaN diode-laser pumped II-VI semiconductor lasers

#45
20050117617
2005-06-02

Circular polarization spin semiconductor laser using magnetic semiconductor and laser beam generating method