ClassID:

238444

Y10S117/902 - CPC Classification

Classification description:

Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor; Levitation, reduced gravity, microgravity, space Specified orientation, shape, crystallography, or size of seed or substrate

Recent Application in this class:
#1
20160040318
2016-02-11

Method of growing group III nitride crystals

#2
20150050770
2015-02-19

Process for producing layered member and layered member

#3
20140087209
2014-03-27

Method of growing group III nitride crystals

#4
20140087113
2014-03-27

Method of growing group III nitride crystals

#5
20120274273
2012-11-01

Encapsulated integrated-circuit device with thin-film battery

#6
20110300413
2011-12-08

Battery-operated wireless-communication apparatus and method

#7
20110239931
2011-10-06

Epitaxial silicon wafer and fabrication method thereof

#8
20110097609
2011-04-28

Method and apparatus for integrated-circuit battery devices

#9
20100199910
2010-08-12

Method of manufacturing silicon carbide single crystal

#10
20100197069
2010-08-05

Process for producing layered member and layered member

#11
20090263955
2009-10-22

GaN single crystal substrate and method of making the same

#12
20090253247
2009-10-08

Method for manufacturing iron silicide nano-wires

#13
20090184327
2009-07-23

Method for producing silicon carbide single crystal

#14
20090068556
2009-03-12

Battery-operated wireless-communication apparatus and method

#15
20090047427
2009-02-19

Ultrahigh vacuum process for the deposition of nanotubes and nanowires

#16
20090038714
2009-02-12

Strong, non-magnetic, cube textured alloy substrates

#17
20080295948
2008-12-04

Method for producing crystallographically-oriented ceramic

#18
20080115721
2008-05-22

Methods for forming alkali halide ingots into rectangular plates

#19
20080072816
2008-03-27

Controlled shape semiconductor layer by selective epitaxy under seed structure

#20
20080057323
2008-03-06

Epitaxial silicon wafer and fabrication method thereof

#21
20070296335
2007-12-27

Process for Producing Layered Member and Layered Member

#22
20070243459
2007-10-18

Method and apparatus for thin-film battery having ultra-thin electrolyte

#23
20070228400
2007-10-04

GaN crystal substrate

#24
20070199505
2007-08-30

Optical medium, an optical lens and a prism

#25
20070187700
2007-08-16

Method of manufacturing group III nitride substrate and semiconductor device

#26
20070105351
2007-05-10

GaN single crystal substrate and method of making the same

#27
20070096117
2007-05-03

Nitride semiconductor wafer

#28
20070087230
2007-04-19

Method and apparatus for integrated-circuit battery devices

#29
20070044711
2007-03-01

Supporting apparatus for supporting a growing single crystal of semiconductor material, and process for producing a single crystal

#30
20070023739
2007-02-01

DAST twin crystal, process for producing the same, and use thereof

#31
20060266279
2006-11-30

Method of producing single crystal

#32
20060231752
2006-10-19

Crystallographic metrology and process control

#33
20060185580
2006-08-24

Pulling-down apparatus and container therefor

#34
20060063074
2006-03-23

Thin-film battery having ultra-thin electrolyte

#35
20060032430
2006-02-16

Method and apparatus for the measurement, orientation and fixation of at least one single crystal

#36
20060021214
2006-02-02

Methods for making device enclosures and devices with an integrated battery

#37
20060019157
2006-01-26

Thin-film battery devices and apparatus for making the same

#38
20050286827
2005-12-29

Monocrystalline optical component with curved surface and multilayer coating

#39
20050229840
2005-10-20

Single crystal silicon producing method, single crystal silicon wafer producing method, seed crystal for producing single crystal silicon, single crystal silicon ingot, and single crystal silicon wafer

#40
20050211156
2005-09-29

Method for manufacturing silicon carbide single crystal from dislocation control seed crystal

#41
20050191518
2005-09-01

Electronic device formed from a thin film with vertically oriented columns with an insulating filler material

#42
20050181525
2005-08-18

Method of fabricating board having periodically poled region

#43
20050120943
2005-06-09

Method and apparatus for growing silicon carbide crystals

#44
20050045223
2005-03-03

Integrated capacitor-like battery and associated method

#45
20050035380
2005-02-17

Monoatomic and moncrystalline layer of large size, in diamond type carbon, and method for the manufacture of this layer