Y10S117/912 - CPC Classification Index

ClassID:

238452 ⎘

Y10S117/912 - CPC Classification

Classification description:

Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor Replenishing liquid precursor, other than a moving zone

Recent Application in this class:

20100132829

2010-06-03

Method for feeding arsenic dopant into a silicon crystal growing apparatus

20090266294

2009-10-29

Method and device for feeding arsenic dopant into a silicon crystal growing apparatus

20090084307

2009-04-02

One-pot synthesis of high-quality metal chalcogenide nanocrystals without precursor injection

20050211156

2005-09-29

Method for manufacturing silicon carbide single crystal from dislocation control seed crystal