238455 ⎘
Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor Separating from substrate
BOND AND RELEASE LAYER TRANSFER PROCESS
#2Bond and release layer transfer process
#3Bond and release layer transfer process
#4Process for producing layered member and layered member
#5Controlled process and resulting device
#6Controlled process and resulting device
#7METHOD AND APPARATUS FOR FABRICATING CRACK-FREE GROUP III NITRIDE SEMICONDUCTOR MATERIALS
#8Method of cutting single crystals
#9CONTROLLED PROCESS AND RESULTING DEVICE
#10METHOD OF FABRICATING A RELEASE SUBSTRATE
#11Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
#12Method for producing III-N layers, and III-N layers or III-N substrates, and devices based thereon
#13Controlled process and resulting device
#14Process for producing layered member and layered member
#15Method for manufacturing nitride semiconductor device
#16METHOD AND APPARATUS FOR FABRICATING CRACK-FREE GROUP III NITRIDE SEMICONDUCTOR MATERIALS
#17Method of cutting single crystals
#18AlGaN substrate and production method thereof
#19Method for producing silicon carbide single crystal
#20Method of fabricating a release substrate
#21Crystal film fabrication
#22METHOD AND APPARATUS FOR FABRICATING CRACK-FREE GROUP III NITRIDE SEMICONDUCTOR MATERIALS
#23Controlled process and resulting device
#24Diamond based substrate for electronic devices
#25Controlled cleaving process
#26Method of producing gallium nitride (GaN) independent substrate, method of producing GaN crystal body, and method of producing GaN substrate
#27Method for producing III-N layers, and III-N layers or III-N substrates, and devices based thereon
#28Method for producing semiconductor wafer
#29Bulk single crystal gallium nitride and method of making same
#30Process for Producing Layered Member and Layered Member
#31Fabrication of active areas of different natures directly onto an insulator: application to the single or double gate MOS transistor
#32Controlled process and resulting device
#33Controlled process and resulting device
#34Method of fabricating a release substrate
#35Method for making a composite substrate and composite substrate according to the method
#36Method and apparatus for fabricating crack-free group III nitride semiconductor materials
#37Process for producing GaN substrate
#38AlGaN substrate and production method thereof
#39Controlled cleaving process
#40Bulk single crystal gallium nitride and method of making same
#41Method for epitaxial growth of a gallium nitride film separated from its substrate
#42Controlled cleaving process
#43Method of manufacturing crystalline film, method of manufacturing crystalline-film-layered substrate, method of manufacturing thermoelectric conversion element, and thermoelectric conversion element
#44Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
#45Method and device for transferring anisotropic crystal film from donor to receptor, and the donor
#46Method of manufacturing gallium nitride-based single crystal substrate
#47Method of fabrication of a substrate for an epitaxial growth
#48Method for fabricating an epitaxial substrate