243542 ⎘
Nanotechnology; Nanostructure Dendrimer, i.e. serially branching or "tree-like" structure
Multiple silicon atom quantum dot and devices inclusive thereof
#2Nanostructured microelectrodes and biosensing devices incorporating the same
#3Nanostructured microelectrodes and biosensing devices incorporating the same
#4Semiconductor device and method of manufacturing the same
#5Semiconductor integrated circuit system and method for driving the same
#6Semiconductor integrated circuit system and method for driving the same
#7Semiconductor device having a non-volatile memory built-in
#8Graphene and its growth
#9Semiconductor memory device
#10High thermal stable hollow mesoporous nanotubes, preparation and application for the same
#11Drift mitigation for multi-bits phase change memory
#12Amphiphilic multi-arm copolymers and nanomaterials derived therefrom
#13Semiconductor integrated circuit system and method for driving the same
#14Amphiphilic multi-arm copolymers and nanomaterials derived therefrom
#15Adaptive wordline programming bias of a phase change memory
#16Reducing temporal changes in phase change memories
#17Semiconductor phase change memory using multiple phase change layers
#18Phase-change memory device
#19Semiconductor phast change memory using multiple phase change layers
#20Optimized solid electrolyte for programmable metallization cell devices and structures
#21Programmable metallization cell structure including an integrated diode, device including the structure, and method of forming same
#22Silica-supported oligomeric hybrid materials
#23Adaptive wordline programming bias of a phase change memory
#24Forced ion migration for chalcogenide phase change memory device
#25Nanostructured microelectrodes and biosensing devices incorporating the same
#26Programmable via devices in back end of line level
#27Catalytic materials for fuel cell electrodes and method for their production
#28Reducing temporal changes in phase change memories
#29Microelectronic programmable device and methods of forming and programming the same
#30Memory devices including multi-bit memory cells having magnetic and resistive memory elements and related methods
#31Multiple level cell phase-change memory devices having pre-reading operation resistance drift recovery, memory systems employing such devices and methods of reading memory devices
#32Protein-proteophore complexes
#33Growth of Single Crystal Nanowires
#34Adaptive wordline programming bias of a phase change memory
#35Phase change memory structure with multiple resistance states and methods of programming and sensing same
#36Variable resistance memory device and method of manufacturing the same
#37Production and use of highly functional, highly branched or hyperbranched polylysines
#38Production and use of highly functional, highly branched or hyperbranched polylysines
#39Semiconductor phase change memory using multiple phase change layers
#40Nanostructures formed of branched nanowhiskers and methods of producing the same
#41Microelectronic programmable device and methods of forming and programming the same
#42Optical ovonic threshold switch
#43Catalyst-supporting carbon nanohorn composite and process for producing same
#44Method of making dendritic magnetic nanostructures
#45Phase-change memory device and method of fabricating the same
#46Method for reducing a reset current for resetting a portion of a phase change material in a memory cell of a phase change memory device and the phase change memory device
#47Peptide nucleic acids conjugated with multi-amine linkers and nucleic acid detecting device using the same
#48Powder for cold spraying processes
#49Compounds for organic electronic devices
#50Phase change memory devices and fabrication methods thereof
#51Optimized solid electrolyte for programmable metallization cell devices and structures
#52Vapor Grown Carbon Fiber, and Production Method and Use Thereof
#53Contraceptive composition
#54Agent for the prevention and treatment of sexually transmitted diseases-I
#55Reducing temporal changes in phase change memories
#56Method and apparatus for accessing a multi-mode programmable resistance memory
#57Porous films and bodies with enhanced mechanical strength
#58Method and apparatus for an integrated circuit with programmable memory cells, data system
#59Electrically conductive composite material
#60Metal cluster-carrying metal oxide support and process for production thereof
#61Semiconductor phase change memory using multiple phase change layers
#62Multi-level phase change memory device, program method thereof, and method and system including the same
#63Adaptive wordline programming bias of a phase change memory
#64Production and use of highly functional, highly branched or hyperbranched polylysines
#65Phase change memory
#66Phase change memory device using a multiple level write voltage
#67Programmable via devices in back end of line level
#68Phase change memory structure with multiple resistance states and methods of programming and sensing same
#69Multi-level resistive memory cell using different crystallization speeds
#70Multiple level cell phase-change memory device having pre-reading operation resistance drift recovery, memory systems employing such devices and methods of reading memory devices
#71Microelectric programmable device and methods of forming and programming the same
#72Templated semiconductor particles
#73Growth of single crystal nanowires
#74Optimized solid electrolyte for programmable metallization cell devices and structures
#75Dendritic molecular intracellular transporters and methods of making and using same
#76Memory devices including multi-bit memory cells having magnetic and resistive memory elements and related methods
#77Non-volatile memory device and method of operating the same
#78Forced ion migration for chalcogenide phase change memory device
#79Nanocrystal/sol-gel nanocomposites
#80Variable resistance memory device and method of manufacturing the same
#81Semiconductor memory device and method for fabricating semiconductor memory device
#82Phase-change memory device and firing method for the same
#83Phase change memory erasable and programmable by a row decoder
#84Vapor grown carbon fiber, production method thereof and composite material containing the carbon fiber
#85Optimized solid electrolyte for programmable metallization cell devices and structures
#86Ceramic nanostructures and methods of fabrication
#87Nanocrystal/sol-gel nanocomposites
#88Carbon nanotube with ZnO asperities
#89Phase-change memory device and method of fabricating the same
#90Methods and compositions for phosphate binding
#91Protein-proteophore complexes
#92Dendrimer compositions with high branching multiplicity
#93Initial firing method and phase change memory device for performing firing effectively
#94Templated semiconductor particles and methods of making
#95Method for reducing a reset current for resetting a portion of a phase change material in a memory cell of a phase change memory device and the phase change memory device
#96Phosphorus dendrimers, preparation method thereof and use of same for the extraction of actinides and lanthanides
#97Phase change memory devices and fabrication methods thereof
#98Porous films and bodies with enhanced mechanical strength
#99Nanocomposites of dendritic polymers
#100Nanostructures formed of branched nanowhiskers and methods of producing the same
#101Vapor grown carbon fiber, and production method and use thereof
#102Beneficial agent delivery systems
#103Fabrication of self-assembled dendron monolayers
#104Initial firing method and phase change memory device for performing firing effectively
#105Growth of single crystal nanowires
#106Agent for the prevention and treatment of sexually transmitted diseases-I