ClassID:

243607

Y10S977/819 - CPC Classification

Classification description:

Nanotechnology; Nanostructure; Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions; Group III-V based compounds, e.g. AlaGabIncNxPyAsz III-As based compounds, e.g. AlxGayInzAs

Recent Application in this class:
#1
20200161517
2020-05-21

Method for increasing the light output of microLED devices using quantum dots

#2
20190198563
2019-06-27

Multi-color monolithic light-emitting diodes and methods for making the same

#3
20190198562
2019-06-27

Multi-color monolithic light-emitting diodes and methods for making the same

#4
20190157517
2019-05-23

Method for fabricating quantum dot light emitting diodes (LEDs) with suppressed photobrighting

#5
20190011819
2019-01-10

Method of manufacturing composite material

#6
20180364553
2018-12-20

Optical film

#7
20180354244
2018-12-13

Thiolated hydrophilic ligands for improved quantum dot reliability in resin films

#8
20180299755
2018-10-18

Light emitting apparatus using composite material

#9
20180287025
2018-10-04

Method for increasing the light output of microLED devices using quantum dots

#10
20180265774
2018-09-20

Polymer composites and films comprising reactive additives having thiol groups for improved quantum dot dispersion and barrier properties

#11
20180231843
2018-08-16

Quantum dot, color conversion panel, and display device including the same

#12
20180187074
2018-07-05

Semiconductor nanoparticle, dispersion liquid, film, and method of producing semiconductor nanoparticle

#13
20180107937
2018-04-19

Quantum optical system

#14
20180006092
2018-01-04

Semiconducting particles in electronic elements

#15
20170301824
2017-10-19

OPTICAL DEVICE AND METHOD FOR ITS FABRICATION

#16
20170133614
2017-05-11

Light-Emiting Device and Manufacturing Method Therefor, Display Apparatus, and Optical Detection Apparatus

#17
20170125519
2017-05-04

Process for fabricating vertically-aligned gallium arsenide semiconductor nanowire array of large area

#18
20140061503
2014-03-06

Surface-modified quantum dot luminophores

#19
20120161101
2012-06-28

WATER STABLE III-V SEMICONDUCTOR NANOCRYSTAL COMPLEXES AND METHODS OF MAKING SAME

#20
20110309233
2011-12-22

Methods for fabricating and using nanowires

#21
20110253982
2011-10-20

Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication

#22
20090315446
2009-12-24

Water-dispersible nanoparticles having high luminous efficiency and method of producing the same

#23
20080199381
2008-08-21

Process for the production of InP fine particles and InP fine particle dispersion obtained by the process

#24
20080090385
2008-04-17

Composite material including nanocrystals and methods of making

#25
20080083907
2008-04-10

Water based colorants comprising semiconductor nanocrystals and methods of making and using the same

#26
20060202167
2006-09-14

Water-stable III-V semiconductor nanocrystal complexes and methods of making same

#27
20060060862
2006-03-23

Composite material including nanocrystals and methods of making

#28
20060014040
2006-01-19

Semiconductor nanocrystal complexes comprising a metal coating and methods of making same

#29
20060001119
2006-01-05

III-V semiconductor nanocrystal complexes and methods of making same

#30
20050084443
2005-04-21

Preparation of nanocrystallites

#31
15851602
2019-01-15

Multi-color monolithic light-emitting diodes and methods for making the same

#32
15792815
2019-04-23

Process for group III-V semiconductor nanostructure synthesis and compositions made using same

#33
15161633
2017-05-30

Large-scale patterning of germanium quantum dots by stress transfer