Memory cells having electrically conductive nanodots and apparatus having such memory cells

Systems and methods for fabrication of superconducting integrated circuits

Nanoscale device composing an elongated crystalline nanostructure

Nonvolatile nanotube memory arrays using nonvolatile nanotube blocks and cell selection transistors

Semiconductor Josephson junction and a transmon qubit related thereto

Memory cells having electrically conductive nanodots and apparatus having such memory cells

Method of synthesizing magnetite/maghemite core/shell nanoparticles

Optically variable data storage device

Systems and methods for fabrication of superconducting integrated circuits

Low power embedded one-time programmable (OTP) structures

Iron-based oxide magnetic particle powder and method for producing iron-based oxide magnetic particle powder

Advanced processing apparatus

Nanoscale device comprising an elongated crystalline nanostructure

Semiconductor josephson junction and a transmon qubit related thereto

Substrate treatment method, computer readable storage medium and substrate treatment system

Low power embedded one-time programmable (OTP) structures

Systems and methods for fabrication of superconducting integrated circuits

Optically variable data storage device

Nanomagnetic network structures and a method of reconfigurable operation based on magnetization dynamics

Magnetic devices including film structures

Tunable voltage margin access diodes

Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks

Tunable voltage margin access diodes

Methods of forming nanotube films and articles

Antiferromagnetic storage device

Semi-conductor device with programmable response

Assembly of vertically aligned nanotube arrays containing particles and application thereof

Memory cells having electrically conductive nanodots

Optically variable data storage device

Magnetic devices including film structures

Conductive nanoparticles

Near field transducer for heat-assisted magnetic recording

Magnetic storage medium comprised of magnetic nanoparticles contained within nanotubes

Junction field-effect floating gate quantum dot memory switch

Giant magneto resistive sensor and method for making same

Magnetic devices including film structures

Magnetic storage medium comprised of magnetic nanoparticles contained within nanotubes

Memory elements and cross point switches and arrays for same using nonvolatile nanotube blocks

Racetrack memory cells with a vertical nanowire storage element

Racetrack memory cells with a vertical nanowire storage element

System and method for integrating a single nanowire into a nanocircuit

Antiferromagnetic storage device

Magnetic memory

MEMORY DEVICES HAVING UNIT CELL AS SINGLE DEVICE AND METHODS OF MANUFACTURING THE SAME

Non-volatile memory structure containing nanodots and continuous metal layer charge traps and method of making thereof

DRAM with a nanowire access transistor

DRAM with a nanowire access transistor

Nonvolatile semiconductor memory device

Resistive memory arrangement and a method of forming the same

Magneto-resistance effect element, and method for manufacturing the same

Three-dimensional integrated circuit

Antiferromagnetic storage device

Method of integrating a single nanowire into a nanocircuit

Organic memory element

Nanoscopic wire-based devices and arrays

Field effect devices controlled via a nanotube switching element

Nanowire memory device and method of manufacturing the same

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Memory cell that includes a carbon-based memory element and methods of forming the same

Low operational current phase change memory structures

Bistable nanoswitch

Conductive organic non-volatile memory device with nanocrystals embedded in an amorphous barrier layer

Method of forming a non-volatile electron storage memory and the resulting device

Two-terminal nanotube devices and systems and methods of making same

Charge storage nodes with conductive nanodots

Nonoscopic wired-based devices and arrays

Semiconductor storage element and manufacturing method thereof

Memory cells containing charge-trapping zones

Non-volatile electromechanical configuration bit array

Methods of fabricating non-volatile memory devices having carbon nanotube layer and passivation layer

Nanowire-based memristor devices

Systems and methods for fabrication of superconducting integrated circuits

Luminescence reference standards

Two-terminal nanotube devices including a nanotube bridge and methods of making same

Two-terminal nanotube devices and systems and methods of making same

Method of fabricating Ag-doped Te-based nano-material and memory device using the same

Nanowire memory device and method of manufacturing the same

Nanocrystal based universal memory cells, and memory cells

Low operational current phase change memory structures

Memory cells

PHOTON-BASED MEMORY DEVICE

Crystalline nanowire substrate, method of manufacturing the same, and method of manufacturing thin film transistor using the same

Method of forming memory with floating gates including self-aligned metal nanodots using a coupling layer

Semiconductor device and method for fabricating the same

Isolated metal plug process for use in fabricating carbon nanotube memory cells

Resistive memory device and method of fabricating the same

Bistable nanoswitch

Nanotube-based switching elements with multiple controls and logic circuits having said elements

Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks

Non-volatile electromechanical field effect devices and circuits using same and methods of forming same

Read/write apparatus and method for a magnetic storage medium comprised of magnetic nanoparticles contained within nanotubes

Devices having vertically-disposed nanofabric articles and methods of making the same

Resistive nonvolatile memory element, and production method of the same

Method of making a nanotube-based shadow random access memory

CONDUCTIVE NANOPARTICLES

Memory cell comprising dynamic random access memory (DRAM) nanoparticles and nonvolatile memory (NVM) nanoparticle

EEPROMS USING CARBON NANOTUBES FOR CELL STORAGE

Multi-bit nonvolatile memory devices and methods of operating the same

Electromechanical memory array using nanotube ribbons and method for making same

Phase change memory device having phase change material layer containing phase change nano particles

Apparatus, method and system for reconfigurable circuitry

Memory cell that includes a carbon-based memory element and methods of forming the same

Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same

Drive method of nanogap switching element and storage apparatus equipped with nanogap switching element

Functional molecular device

Method of forming memory with floating gates including self-aligned metal nanodots using a coupling layer

Organic memory device with a charge storage layer and method of manufacture

Nonvolatile organic bistable memory device and method of manufacturing the same

Methods of forming memory cells

Method of forming a nanowire based non-volatile floating-gate memory

Memory cells, electronic systems, methods of forming memory cells, and methods of programming memory cells

Volatile nanotube-based switching elements with multiple controls

Carbon nanotube films, layers, fabrics, ribbons, elements and articles

Ferroelectric polarization pattern with differing feedback signals

Controlled alignment of catalytically grown nanostructures in a large-scale synthesis process

Non-volatile shadow latch using a nanotube switch

Switching element, method of manufacturing the switching element, and memory element array

Conductive organic nonvolatile memory device having nanocrystals surrounded by amorphous barrier

Carbon nanotube conductor for trench capacitors

Vertical tunneling transistor

Controlled alignment of catalytically grown nanostructures in a large-scale synthesis process

Semiconductor storage element and manufacturing method thereof

Magneto-resistance effect element, and method for manufacturing the same

Metallic nanospheres embedded in nanowires initiated on nanostructures and methods for synthesis thereof

Circuit arrays having cells with combinations of transistors and nanotube switching elements

Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same

Hybrid circuit having nanotube memory cells

Nonvolatile memory devices and methods of fabricating the same

Data recording device comprising inclined carbon nanotubes and method for the production thereof

Bistable latch circuit implemented with nanotube-based switching elements

Process of forming an electronic device including a layer of discontinuous storage elements

Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same

Device selection circuitry constructed with nanotube ribbon technology

Latch circuits and operation circuits having scalable nonvolatile nanotube switches as electronic fuse replacement elements

Process for manufacturing probes intended to interact with a storage medium and probe obtained thereby

Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks

Non-volatile switching and memory devices using vertical nanotubes

Photon-based memory device

Methods of forming nanoscopic wire-based devices and arrays

Semiconductor device having nitridated oxide layer and method therefor

Memory device in which data is written or read by a switching operation of a bit line that is inserted into a trench formed between a plurality of word lines

Electromechanical memory array using nanotube ribbons and method for making same

Isolation structure for deflectable nanotube elements

Random access memory including nanotube switching elements

Nanoscale wire coding for stochastic assembly

Nanowire electromechanical switching device, method of manufacturing the same and electromechanical memory device using the nanowire electromechanical switching device

Memory device including phase-changeable material region and method of fabricating the same

Method for removing nanoclusters from selected regions

Two-terminal nanotube devices and systems and methods of making same

Non-volatile electromechanical field effect devices and circuits using same and methods of forming same

Bistable nanoparticle-polymer composite for use in memory devices

Controllable nanomechanical memory element

NANOSCOPIC WIRE-BASED DEVICES AND ARRAYS

Nanowire memory device and method of manufacturing the same

Memory device with quantum dot and method for manufacturing the same

Memory device having nanocrystals in memory cell

Phase change memory device having carbon nano tube lower electrode material and method of manufacturing the same

Nanomechanical switching device

Magnetic switching element and signal processing device using the same

Data storage nanostructures

Nanoelectromechanical memory cells and data storage devices

Nonvolatile carbon nanotube memory device using multiwall carbon nanotubes and methods of operating and fabricating the same

Molecular memory devices including solid-state dielectric layers and related methods

Nanoscopic wired-based devices and arrays

NONVOLATILE SEMICONDUCTOR MEMORY DEVICE HAVING EXCELLENT CHARGE RETENTION AND MANUFACTURING PROCESS OF THE SAME

Random access memory including nanotube switching elements

One-time programmable, non-volatile field effect devices and methods of making same

Non-volatile electromechanical configuration bit array

Multi-terminal electromechanical nanocsopic switching device with control and release electrodes

Non-volatile electromechanical field effect devices and circuits using same and methods of forming same

Method for making conductive nanoparticle charge storage element

Shape memory alloy information storage device

Magnetic switching element and signal processing device using the same

Nanoscopic wired-based devices and arrays

Relay-connected semiconductor transistors

Flash memory device utilizing nanocrystals embedded in polymer

Device selection circuitry constructed with nanotube technology

Nanowire based non-volatile floating-gate memory

Non-volatile switching and memory devices using vertical nanotubes

Method of making non-volatile field effect devices and arrays of same

Devices having vertically-disposed nanofabric articles and methods of making the same

Source side injection storage device and method therefor

Micro electronic component with electrically accessible metallic clusters

Method of fabricating memory device utilizing carbon nanotubes

Non-volatile-shadow latch using a nanotube switch

Nanoscopic wire-based devices and arrays

Electromechanical three-trace junction devices

Massively multi-level optical data storage using subwavelength sized nano-grating structures

Nanocrystal quantum dot memory devices

Methods of forming nanoscopic wire-based devices and arrays

Temperature compensation of thin film diode voltage threshold in memory sensing circuit

Nanocircuitry for sensing, recording and outputting data

Semiconductor device with insulating layer having ion-coated nanoparticles

Magnetic head for use in a heat-assisted magnetic recording apparatus

Semiconductor device having nitridated oxide layer and method therefor

Method of forming an integrated circuit having nanocluster devices and non-nanocluster devices

Devices having vertically-disposed nanofabric articles and methods of making the same

Nonvolatile semiconductor memory device having nanoparticles for charge retention

Nanocrystal protective layer for crossbar molecular electronic devices

Method of forming a non-volatile electron storage memory and the resulting device

Functional molecular element and functional molecular device

Phosphorescent nanotube memory device

Vertical tunneling transistor

Semiconductor storage device

Nanoscale programmable structures and methods of forming and using same

Nanotube-based switching elements with multiple controls

Nanoparticle-polymer bistable devices

Data storage device including nanotube electron sources

Memory device with quantum dot and method for manufacturing the same

In situ patterning of electrolyte for molecular information storage devices

Nano-enabled memory devices and anisotropic charge carrying arrays

Nanotube films and articles

Memory device using nanotube cells

EEPROMS using carbon nanotubes for cell storage

Apparatus for controlled alignment of catalytically grown nanostructures

Controlled alignment catalytically grown nanostructures

Nanoscopic wire-based devices and arrays

Molecular memory device

Method of making non-volatile field effect devices and arrays of same

Field effect devices having a gate controlled via a nanotube switching element

Hybrid circuit having nanotube electromechanical memory

Field effect devices having a source controlled via a nanotube switching element

One-time programmable, non-volatile field effect devices and methods of making same

Non-volatile electromechanical field effect devices and circuits using same and methods of forming same

Process for making byte erasable devices having elements made with nanotubes

Nanotube films and articles

Circuit arrays having cells with combinations of transistors and nanotube switching elements

Field effect devices having a drain controlled via a nanotube switching element

Photosensitive polymeric memory elements

Vertical tunneling transistor

High density molecular memory device

NRAM bit selectable two-device nanotube array

Nanotube-based switching elements with multiple controls

Circuits made from nanotube-based switching elements with multiple controls

Isolation structure for deflectable nanotube elements

Method and structure for high capacitance memory cells

Two-dimensional structural transition controlled by an electric field, memory storage device thereof, and method of making a memory storage device

Sensor structure with pinned stabilization layer