Magnetoresistive sensor and fabrication method for a magnetoresistive sensor

Electronic switching element

Electronic switching element

Magnetic field sensor using in situ solid source graphene and graphene induced anti-ferromagnetic coupling and spin filtering

Magnetoresistive element and magnetic memory

CoFe/Ni multilayer film with perpendicular anisotropy for microwave assisted magnetic recording

Magnetic read head with antiferromagentic layer

TMR device with novel free layer structure

TMR device with novel free layer structure

CoFe/Ni multilayer film with perpendicular anisotropy for microwave assisted magnetic recording

Three-dimensional magnetic memory with multi-layer data storage layers

Current-perpendicular-to-plane magnetoresistive read sensor with grooved contact and free layers

Stack with wide seed layer

Method of fabricating a magnetoresistive element

TMR device with novel free layer

Scalable magnetoresistive element

MR enhancing layer (MREL) for spintronic devices

Magnetoresistance effect element and magnetic memory

Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application

Stack with wide seed layer

Free layer with high thermal stability for magnetic device applications by insertion of a boron dusting layer

High thermal stability free layer with high out-of-plane anisotropy for magnetic device applications

Magnetic element having perpendicular anisotropy with enhanced efficiency

Tunneling magnetoresistance (TMR) read sensor with a long diffusion path and ex-situ interfaces in a sense layer structure

Memory system having thermally stable perpendicular magneto tunnel junction (MTJ) and a method of manufacturing same

Spin injection layer robustness for microwave assisted magnetic recording

Varyinig morphology in magnetic sensor sub-layers

CoFe/Ni Multilayer film with perpendicular anisotropy for microwave assisted magnetic recording

CoFe/Ni multilayer film with perpendicular anisotropy for microwave assisted magnetic recording

Magnetic memory cell construction

Magnetic tunnel junctions with perpendicular magnetization and magnetic random access memory

STT-MRAM MTJ manufacturing method with in-situ annealing

Magnetoresistive element and method of manufacturing the same

TMR sensor film using a tantalum insertion layer and systems thereof

Magneto-resistive effect element, magnetic head, magnetic head slider, head gimbal assembly and hard disk drive apparatus

TMR device with low magnetorestriction free layer

Ferromagnetic laminated structure and manufacturing method thereof

Storage element and memory device

Magnetic random access memory (MRAM) with enhanced magnetic stiffness and method of making same

MEMORY SYSTEM HAVING THERMALLY STABLE PERPENDICULAR MAGNETO TUNNEL JUNCTION (MTJ) AND A METHOD OF MANUFACTURING SAME

Magnetic memory including memory cells incorporating data recording layer with perpendicular magnetic anisotropy film

Structure and method for enhancing interfacial perpendicular anisotropy in CoFe(B)/MgO/CoFe(B) magnetic tunnel junctions

Magnetic tunnel junction having a magnetic insertion layer and methods of producing the same

Assisting FGL oscillations with perpendicular anisotropy for MAMR

Magneto-resistance element and semiconductor memory device including the same

Memory cell with radial barrier

Method of forming a spin-transfer torque random access memory (STT-RAM) device

Spin injection source and manufacturing method thereof

Low switching current dual spin filter (DSF) element for STT-RAM and a method for making the same

Magnetoresistance effect element with a layer containing an oxide as a principal component and containing a magnetic transition metal element which does not bond to oxygen

TMR device with novel pinned layer

Multilayer structure with high perpendicular anisotropy for device applications

CoFe/Ni Multilayer film with perpendicular anistropy for microwave assisted magnetic recording

TMR or CPP structure with improved exchange properties

MAGNETORESISTIVE ELEMENT AND MAGNETIC RECORDING APPARATUS

MR enhancing layer (MREL) for spintronic devices

CPP structure with enhanced GMR ratio

Magnetic stack design

Method of manufacturing a CPP structure with enhanced GMR ratio

Magnetic memory cell construction

Spin-torque based memory device using a magnesium oxide tunnel barrier

Tunneling magnetoresistance (TMR) device, its manufacture method, magnetic head and magnetic memory using TMR device

Tunneling junction magnetoresistive effect element and manufacturing method thereof

MRAM cells including coupled free ferromagnetic layers for stabilization

MTJ incorporating CoFe/Ni multilayer film with perpendicular magnetic anisotropy for MRAM application

Magnetic memory cell construction

Tunneling magnetoresistance read sensor with dual sense layers

TMR sensor with a multilayered reference layer

Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application

Method and system for fabricating magnetic transducers with improved pinning

Magnetoresistive sensor with synthetic antiferromagnetic cap or seed layers

CCP-CPP magnetoresistive reader with high GMR value

Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier

MAGNETIC TUNNEL JUNCTION DEVICE WITH MAGNETIC FREE LAYER HAVING SANDWICH STRUCTURE

Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier

SPIN VALVE ELEMENT

Magnetoresistance device including layered ferromagnetic structure, and method of manufacturing the same

Nickel thin film, method for formation of the nickel thin film, ferromagnetic nano-junction element, method for producing the ferromagnetic nano-junction element, thin metallic wire, and method for formation of the thin metallic wire

Magnetic sensing device including a sense enhancing layer

Tunneling magneto-resistive spin valve sensor with novel composite free layer

Magnetoresistive effect element in CPP-type structure and magnetic disk device

Magnetic memory devices and methods of manufacturing such magnetic memory devices

TUNNEL MAGNETORESISTIVE THIN FILM AND MAGNETIC MULTILAYER FILM FORMATION APPARATUS

Low resistance tunnel magnetoresistance (TMR) structure

Magnetic thin film and method of manufacturing the same, and various application devices using the same

Current-perpendicular-to-plane (CPP) read sensor with ferromagnetic amorphous buffer and polycrystalline seed layers

Memory cell with radial barrier

Magnetic tunnel junction structure having free layer with oblique magnetization

Magnetic stack design

MRAM cells including coupled free ferromagnetic layers for stabilization

TMR device with novel free layer

TMR device with novel free layer structure

Tunneling magnetic sensing element with insertion magnetic layer inspired into soft magnetic layer

Tunneling magnetic sensing element including MGO film as insulating barrier layer

Underlayer for high performance magnetic tunneling junction MRAM

Underlayer for high performance magnetic tunneling junction MRAM

Magnetic memory cell construction

High performance magnetic tunnel barriers with amorphous materials

Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system

Ultra low RA (resistance x area) sensors having a multilayer non-magnetic spacer between pinned and free layers

Thin seeded Co/Ni multilayer film with perpendicular anisotropy for spintronic device applications

Low switching current dual spin filter (DSF) element for STT-RAM and a method for making the same

Magnetic tunnel junction device

Spin-torque oscillator, magnetic head including the spin-torque oscillator, and magnetic recording and reproducing apparatus

Protecting hard bias magnets during a CMP process using a sacrificial layer

Magneto-resistive effect element, magnetic head, and magnetic recording/reading apparatus

Tunnel junction magnetoresistive sensor having a near zero magnetostriction free layer

Three-dimensional magnetic memory with multi-layer data storage layers

Magnetic head and magnetic recording system

TMR device with low magnetostriction free layer

Magnetoresistance effect element with a layer containing an oxide as a principal component and containing a magnetic transition metal element which does not bond to oxygen

Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system

Magnetic thin film, magnetoresistance effect device and magnetic device using the same

TMR or CPP structure with improved exchange properties

Insulator barrier for noise reduction of a TMR magnetic transducer

Highly charged ion modified oxide device and method of making same

Magnetic tunnel barriers and associated magnetic tunnel junctions with high tunneling magnetoresistance

Magnetic tunnel junctions using amorphous materials as reference and free layers

Tunnel magnetoresistive effect element and thin-film magnetic head with tunnel magnetoresistive effect read head element

ORGANIC SPIN TRANSPORT DEVICE

Tunneling magnetoresistive sensor having a high iron concentration free layer and an oxides of magnesium barrier layer

Mg-Zn oxide tunnel barriers and method of formation

CoFeSiB/Pt multilayers exhibiting perpendicular magnetic anisotropy

Tunnel magnetoresistive effect element having a tunnel barrier layer of a crystalline insulation material and manufacturing method of tunnel magnetoresistive effect element

Superparamagnetic platelets field sensing devices

Tunneling magnetoresistance (TMR) device, its manufacture method, magnetic head and magnetic memory using TMR device

Magnetic tunnel barriers and associated magnetic tunnel junctions with high tunneling magnetoresistance

Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory

Low resistance TMR read head fabricated by a novel oxidation method

Spin-torque devices

Tunnel junction device

Magnetic sensing device including a sense enhancing layer

Tunnel magnetoresistance element having a double underlayer of amorphous MgO and crystalline MgO(001)

Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier

Magnetic tunnel junction pressure sensors and methods

Magnetoresistive sensor

Magnetic tunnel junction temperature sensors and methods

Method of manufacturing a CPP structure with enhanced GMR ratio

Magnetic storage element storing data by magnetoresistive effect

Multilayer force sensor and method for determining a force

Method of forming a magnetic random access memory element

Magnetoresistance device including layered ferromagnetic structure, and method of manufacturing the same

Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system

Tunneling magneto-resistive spin valve sensor with novel composite free layer

Superparamagnetic field sensing device

Magnetic tunnel junctions using amorphous materials as reference and free layers

Magnetic tunnel junctions with high tunneling magnetoresistance using non-bcc magnetic materials

High performance magnetic tunnel barriers with amorphous materials

Underlayer for high performance magnetic tunneling junction MRAM

CPP GMR with hard magnet in stack bias layer

Method for fabricating a low resistance TMR read head

Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system

Magnetoelectric multilayer composites for field conversion

Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory

Magnetoresistance effect element

Magnetoresistive effect element and magnetic memory having the same

Magnetic device

Magnetoresistance effect element

Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory

Low resistance magnetic tunnel junction structure

Method of manufacturing a magnetoresistive sensor

Spin tunnel magnetoresistive effect film and element, magnetoresistive sensor using same, magnetic apparatus, and method for manufacturing same

Magneto-resistive device, and magnetic head, head suspension assembly and magnetic disk apparatus using magneto-resistive device

Managed print service automated and integrated system