TMR device with novel free layer structure

TMR device with novel free layer structure

Method of making a high thermal stability reference structure with out-of-plane anisotropy for magnetic device applications

High thermal stability reference structure with out-of-plane anisotropy for magnetic device applications

Stack with wide seed layer

Method of fabricating a magnetoresistive element

Thin seeded Co/Ni multilayer film with perpendicular anisotropy for read head sensor stabilization

Stack with wide seed layer

Free layer with high thermal stability for magnetic device applications by insertion of a boron dusting layer

High thermal stability free layer with high out-of-plane anisotropy for magnetic device applications

High thermal stability reference structure with out-of-plane aniotropy to magnetic device applications

Tunneling magnetoresistance (TMR) read sensor with a long diffusion path and ex-situ interfaces in a sense layer structure

Magnetic element with dual magnetic moments

Varyinig morphology in magnetic sensor sub-layers

Magnetic memory cell construction

Magnetic element with reduced shield-to-shield spacing

Magnetic element with dual magnetic moments

Magnetoresistive element and method of manufacturing the same

Ferromagnetic laminated structure and manufacturing method thereof

Storage element and memory device

Magnetic memory including memory cells incorporating data recording layer with perpendicular magnetic anisotropy film

Assisting FGL oscillations with perpendicular anisotropy for MAMR

Magnetoresistive element and magnetic memory

Magnetic element having perpendicular anisotropy with enhanced efficiency

Method for manufacturing head including light source unit for thermal assist

Magnetic sensor stack body, method of forming the same, film formation control program, and recording medium

Memory cell with radial barrier

Method of forming a spin-transfer torque random access memory (STT-RAM) device

Low switching current dual spin filter (DSF) element for STT-RAM and a method for making the same

Magnetic memory element, driving method for same, and nonvolatile storage device

Magnetic stack design

Magnetic memory cell construction

Spin-torque based memory device using a magnesium oxide tunnel barrier

Production of a device comprising magnetic structures formed on one and the same substrate and having respective different magnetization orientations

Spin-valve recording element and storage device

Domain wall motion element and magnetic random access memory

Magnetic memory cell construction

Magnetic element having perpendicular anisotropy with enhanced efficiency

Thin seeded Co/Ni multilayer film with perpendicular anisotropy for read head sensor stabilization

CCP-CPP magnetoresistive reader with high GMR value

Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier

Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier

Layered structure having FePt system magnetic layer and magnetoresistive effect element using the same

Magnetic storage device

Current-perpendicular-to-plane (CPP) read sensor with ferromagnetic amorphous buffer and polycrystalline seed layers

Memory cell with radial barrier

Magnetic tunnel junction structure having free layer with oblique magnetization

Magnetic stack design

TMR device with novel free layer structure

Tunneling magnetic sensing element including MGO film as insulating barrier layer

Magnetic memory cell construction

Magnetic sensor including a free magnetization layer and a fixed magnetization layer on a nonmagnetic conductor

Magnetic head assembly

Thin seeded Co/Ni multilayer film with perpendicular anisotropy for spintronic device applications

Low switching current dual spin filter (DSF) element for STT-RAM and a method for making the same

Magnetic tunnel junction device

Spin-torque oscillator, magnetic head including the spin-torque oscillator, and magnetic recording and reproducing apparatus

Galvanomagnetic device and magnetic sensor

Magneto-resistive effect element, magnetic head, and magnetic recording/reading apparatus

Magnetic head and magnetic recording system

Magnetic recording element

Highly charged ion modified oxide device and method of making same

Magnetoresistance effect device and method of production thereof

Mg-Zn oxide tunnel barriers and method of formation

Superparamagnetic platelets field sensing devices

MAGNETIC SENSOR WITH LIMITED ELEMENT WIDTH

Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory

Spin-torque devices

Methods and apparatus for a synthetic anti-ferromagnet structure with reduced temperature dependence

Method of manufacturing thin-film magnetic head

Magnetoresistive device, magnetoresistive head and magnetic recording-reproducing apparatus

Tunnel magnetoresistance element having a double underlayer of amorphous MgO and crystalline MgO(001)

Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier

Magnetic tunnel junction pressure sensors and methods

Magnetic storage element storing data by magnetoresistive effect

Multilayer force sensor and method for determining a force

Exchange coupling film and magnetoresistive element using the same

Superparamagnetic field sensing device

Magnetic sensing element with improved magnetic sensitivity stability and method for producing the same

Exchange coupling film and magnetoresistive element using the same

Magnetic tunnel junctions with high tunneling magnetoresistance using non-bcc magnetic materials

Magnetic recording element and magnetic recording device using the same

Magnetoresistance effect device and a preform therefor

Exchange coupling film and magnetoresistive element using the same

Spin-injection device and magnetic device using spin-injection device

Exchange coupling film and magnetoresistive element using the same

Magnetic detecting element having antiferromagnetic film having predetermined space in track width direction and method for manufacturing the same

CPP GMR with hard magnet in stack bias layer

Fabrication method for an in-stack stabilized synthetic stitched CPP GMR head

CPP GMR and magnetostriction improvement by laminating CoFe free layer with thin FeColayers

Use of greater than about 15 angstrom thick coupling layer in AP-tab magnetic head

Exchange coupling film and magnetoresistive element using the same

Magnetoresistance effect element, magnetic head, and magnetic storage system using a giant magnetoresistance effect element

Magnetoresistive device, magnetoresistive head and magnetic recording-reproducing apparatus

Epitaxial oxide cap layers for enhancing GMR performance

Magnetoelectric multilayer composites for field conversion

Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory

Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory

Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system

Low resistance magnetic tunnel junction structure

Spin-valve magnetoresistive element having fixed magnetic layer of epitaxal laminate including magnetic layer and nonmagnetic layer

Magneto-resistive device, and magnetic head, head suspension assembly and magnetic disk apparatus using magneto-resistive device

Managed print service automated and integrated system